Analytical circuit model for thin film electroluminescent devices

Markku Ylilammi

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    A simple equivalent circuit is developed for alternating current thin film electroluminescent devices. With sinusoidal excitation voltage an exact analytical solution is presented for calculating the device current, transferred charge and the internal voltage across the phosphor layer.
    The circuit is used for modeling EL devices with widely varying phosphor layer materials that include ZnS, CaS, SrS, CaF/sub 2/, SrF/sub 2/, ZnF/sub 2/ and multilayer structures prepared with Atomic Layer Deposition.
    The equivalent circuit gives a straightforward way to characterize the electrical properties of these materials. The fluorides have inferior breakdown properties compared to sulfides although they are much more symmetric.
    The strong asymmetry of SrS is attributed to its nonuniform defect distribution
    Original languageEnglish
    Pages (from-to)1227-1232
    JournalIEEE Transactions on Electron Devices
    Volume42
    Issue number7
    DOIs
    Publication statusPublished - 1995
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Luminescent devices
    Equivalent circuits
    Phosphors
    Thin films
    Atomic layer deposition
    Networks (circuits)
    Electric potential
    Sulfides
    Fluorides
    Multilayers
    Electric properties
    Defects

    Cite this

    @article{14beb0164fab41eab79e9c8c76f20102,
    title = "Analytical circuit model for thin film electroluminescent devices",
    abstract = "A simple equivalent circuit is developed for alternating current thin film electroluminescent devices. With sinusoidal excitation voltage an exact analytical solution is presented for calculating the device current, transferred charge and the internal voltage across the phosphor layer. The circuit is used for modeling EL devices with widely varying phosphor layer materials that include ZnS, CaS, SrS, CaF/sub 2/, SrF/sub 2/, ZnF/sub 2/ and multilayer structures prepared with Atomic Layer Deposition. The equivalent circuit gives a straightforward way to characterize the electrical properties of these materials. The fluorides have inferior breakdown properties compared to sulfides although they are much more symmetric. The strong asymmetry of SrS is attributed to its nonuniform defect distribution",
    author = "Markku Ylilammi",
    year = "1995",
    doi = "10.1109/16.391203",
    language = "English",
    volume = "42",
    pages = "1227--1232",
    journal = "IEEE Transactions on Electron Devices",
    issn = "0018-9383",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    number = "7",

    }

    Analytical circuit model for thin film electroluminescent devices. / Ylilammi, Markku.

    In: IEEE Transactions on Electron Devices, Vol. 42, No. 7, 1995, p. 1227-1232.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Analytical circuit model for thin film electroluminescent devices

    AU - Ylilammi, Markku

    PY - 1995

    Y1 - 1995

    N2 - A simple equivalent circuit is developed for alternating current thin film electroluminescent devices. With sinusoidal excitation voltage an exact analytical solution is presented for calculating the device current, transferred charge and the internal voltage across the phosphor layer. The circuit is used for modeling EL devices with widely varying phosphor layer materials that include ZnS, CaS, SrS, CaF/sub 2/, SrF/sub 2/, ZnF/sub 2/ and multilayer structures prepared with Atomic Layer Deposition. The equivalent circuit gives a straightforward way to characterize the electrical properties of these materials. The fluorides have inferior breakdown properties compared to sulfides although they are much more symmetric. The strong asymmetry of SrS is attributed to its nonuniform defect distribution

    AB - A simple equivalent circuit is developed for alternating current thin film electroluminescent devices. With sinusoidal excitation voltage an exact analytical solution is presented for calculating the device current, transferred charge and the internal voltage across the phosphor layer. The circuit is used for modeling EL devices with widely varying phosphor layer materials that include ZnS, CaS, SrS, CaF/sub 2/, SrF/sub 2/, ZnF/sub 2/ and multilayer structures prepared with Atomic Layer Deposition. The equivalent circuit gives a straightforward way to characterize the electrical properties of these materials. The fluorides have inferior breakdown properties compared to sulfides although they are much more symmetric. The strong asymmetry of SrS is attributed to its nonuniform defect distribution

    U2 - 10.1109/16.391203

    DO - 10.1109/16.391203

    M3 - Article

    VL - 42

    SP - 1227

    EP - 1232

    JO - IEEE Transactions on Electron Devices

    JF - IEEE Transactions on Electron Devices

    SN - 0018-9383

    IS - 7

    ER -