Analytical circuit model for thin film electroluminescent devices

Markku Ylilammi

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

A simple equivalent circuit is developed for alternating current thin film electroluminescent devices. With sinusoidal excitation voltage an exact analytical solution is presented for calculating the device current, transferred charge and the internal voltage across the phosphor layer.
The circuit is used for modeling EL devices with widely varying phosphor layer materials that include ZnS, CaS, SrS, CaF/sub 2/, SrF/sub 2/, ZnF/sub 2/ and multilayer structures prepared with Atomic Layer Deposition.
The equivalent circuit gives a straightforward way to characterize the electrical properties of these materials. The fluorides have inferior breakdown properties compared to sulfides although they are much more symmetric.
The strong asymmetry of SrS is attributed to its nonuniform defect distribution
Original languageEnglish
Pages (from-to)1227-1232
JournalIEEE Transactions on Electron Devices
Volume42
Issue number7
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

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Luminescent devices
Equivalent circuits
Phosphors
Thin films
Atomic layer deposition
Networks (circuits)
Electric potential
Sulfides
Fluorides
Multilayers
Electric properties
Defects

Cite this

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title = "Analytical circuit model for thin film electroluminescent devices",
abstract = "A simple equivalent circuit is developed for alternating current thin film electroluminescent devices. With sinusoidal excitation voltage an exact analytical solution is presented for calculating the device current, transferred charge and the internal voltage across the phosphor layer. The circuit is used for modeling EL devices with widely varying phosphor layer materials that include ZnS, CaS, SrS, CaF/sub 2/, SrF/sub 2/, ZnF/sub 2/ and multilayer structures prepared with Atomic Layer Deposition. The equivalent circuit gives a straightforward way to characterize the electrical properties of these materials. The fluorides have inferior breakdown properties compared to sulfides although they are much more symmetric. The strong asymmetry of SrS is attributed to its nonuniform defect distribution",
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language = "English",
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pages = "1227--1232",
journal = "IEEE Transactions on Electron Devices",
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}

Analytical circuit model for thin film electroluminescent devices. / Ylilammi, Markku.

In: IEEE Transactions on Electron Devices, Vol. 42, No. 7, 1995, p. 1227-1232.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Analytical circuit model for thin film electroluminescent devices

AU - Ylilammi, Markku

PY - 1995

Y1 - 1995

N2 - A simple equivalent circuit is developed for alternating current thin film electroluminescent devices. With sinusoidal excitation voltage an exact analytical solution is presented for calculating the device current, transferred charge and the internal voltage across the phosphor layer. The circuit is used for modeling EL devices with widely varying phosphor layer materials that include ZnS, CaS, SrS, CaF/sub 2/, SrF/sub 2/, ZnF/sub 2/ and multilayer structures prepared with Atomic Layer Deposition. The equivalent circuit gives a straightforward way to characterize the electrical properties of these materials. The fluorides have inferior breakdown properties compared to sulfides although they are much more symmetric. The strong asymmetry of SrS is attributed to its nonuniform defect distribution

AB - A simple equivalent circuit is developed for alternating current thin film electroluminescent devices. With sinusoidal excitation voltage an exact analytical solution is presented for calculating the device current, transferred charge and the internal voltage across the phosphor layer. The circuit is used for modeling EL devices with widely varying phosphor layer materials that include ZnS, CaS, SrS, CaF/sub 2/, SrF/sub 2/, ZnF/sub 2/ and multilayer structures prepared with Atomic Layer Deposition. The equivalent circuit gives a straightforward way to characterize the electrical properties of these materials. The fluorides have inferior breakdown properties compared to sulfides although they are much more symmetric. The strong asymmetry of SrS is attributed to its nonuniform defect distribution

U2 - 10.1109/16.391203

DO - 10.1109/16.391203

M3 - Article

VL - 42

SP - 1227

EP - 1232

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 7

ER -