Abstract
For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens and D. De Zutter has been used. The method is based on three simple DC measurements and the resistance values are received through numerical iterations. It is illustrated in this paper that the parasitic resistances of MESFET's can be calculated analytically using the given method.
Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.
Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.
| Original language | English |
|---|---|
| Pages (from-to) | 67-69 |
| Journal | Physica Scripta |
| Volume | 2002 |
| Issue number | T101 |
| DOIs | |
| Publication status | Published - 2002 |
| MoE publication type | A1 Journal article-refereed |