Analytical determination of parasitic resistances in GaAs MESFET´s

Silja Vatunen (Corresponding Author), Vesa Starck, Panu Siukonen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens and D. De Zutter has been used. The method is based on three simple DC measurements and the resistance values are received through numerical iterations. It is illustrated in this paper that the parasitic resistances of MESFET's can be calculated analytically using the given method.
Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.
Original languageEnglish
Pages (from-to)67-69
JournalPhysica Scripta
Volume2002
Issue numberT101
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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Gallium Arsenide
field effect transistors
iteration
Iteration
Repeatability
direct current
Voltage
Resistance
electric potential

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Vatunen, Silja ; Starck, Vesa ; Siukonen, Panu. / Analytical determination of parasitic resistances in GaAs MESFET´s. In: Physica Scripta. 2002 ; Vol. 2002, No. T101. pp. 67-69.
@article{03d1f0df23f2493a8d5e914807d6a788,
title = "Analytical determination of parasitic resistances in GaAs MESFET´s",
abstract = "For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens and D. De Zutter has been used. The method is based on three simple DC measurements and the resistance values are received through numerical iterations. It is illustrated in this paper that the parasitic resistances of MESFET's can be calculated analytically using the given method. Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.",
author = "Silja Vatunen and Vesa Starck and Panu Siukonen",
year = "2002",
doi = "10.1238/Physica.Topical.101a00067",
language = "English",
volume = "2002",
pages = "67--69",
journal = "Physica Scripta",
issn = "0031-8949",
publisher = "Institute of Physics IOP",
number = "T101",

}

Analytical determination of parasitic resistances in GaAs MESFET´s. / Vatunen, Silja (Corresponding Author); Starck, Vesa; Siukonen, Panu.

In: Physica Scripta, Vol. 2002, No. T101, 2002, p. 67-69.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Analytical determination of parasitic resistances in GaAs MESFET´s

AU - Vatunen, Silja

AU - Starck, Vesa

AU - Siukonen, Panu

PY - 2002

Y1 - 2002

N2 - For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens and D. De Zutter has been used. The method is based on three simple DC measurements and the resistance values are received through numerical iterations. It is illustrated in this paper that the parasitic resistances of MESFET's can be calculated analytically using the given method. Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.

AB - For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens and D. De Zutter has been used. The method is based on three simple DC measurements and the resistance values are received through numerical iterations. It is illustrated in this paper that the parasitic resistances of MESFET's can be calculated analytically using the given method. Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.

U2 - 10.1238/Physica.Topical.101a00067

DO - 10.1238/Physica.Topical.101a00067

M3 - Article

VL - 2002

SP - 67

EP - 69

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T101

ER -