Analytical determination of parasitic resistances in GaAs MESFET´s

Silja Vatunen; Vesa Starck; Panu Siukonen

doi:10.1238/Physica.Topical.101a00067

Analytical determination of parasitic resistances in GaAs MESFET´s

Silja Vatunen (Corresponding Author), Vesa Starck, Panu Siukonen

VTT Technical Research Centre of Finland

Nokia Oyj

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens and D. De Zutter has been used. The method is based on three simple DC measurements and the resistance values are received through numerical iterations. It is illustrated in this paper that the parasitic resistances of MESFET's can be calculated analytically using the given method.
Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.

Original language	English
Pages (from-to)	67-69
Journal	Physica Scripta
Volume	2002
Issue number	T101
DOIs	https://doi.org/10.1238/Physica.Topical.101a00067
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

Access to Document

10.1238/Physica.Topical.101a00067

http://iopscience.iop.org/article/10.1238/Physica.Topical.101a00067

Cite this

@article{03d1f0df23f2493a8d5e914807d6a788,

title = "Analytical determination of parasitic resistances in GaAs MESFET´s",

abstract = "For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens and D. De Zutter has been used. The method is based on three simple DC measurements and the resistance values are received through numerical iterations. It is illustrated in this paper that the parasitic resistances of MESFET's can be calculated analytically using the given method. Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.",

author = "Silja Vatunen and Vesa Starck and Panu Siukonen",

year = "2002",

doi = "10.1238/Physica.Topical.101a00067",

language = "English",

volume = "2002",

pages = "67--69",

journal = "Physica Scripta",

issn = "0281-1847",

publisher = "Institute of Physics IOP",

number = "T101",

}

TY - JOUR

T1 - Analytical determination of parasitic resistances in GaAs MESFET´s

AU - Vatunen, Silja

AU - Starck, Vesa

AU - Siukonen, Panu

PY - 2002

Y1 - 2002

N2 - For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens and D. De Zutter has been used. The method is based on three simple DC measurements and the resistance values are received through numerical iterations. It is illustrated in this paper that the parasitic resistances of MESFET's can be calculated analytically using the given method. Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.

AB - For extracting the parasitic resistances of GaAs MESFET's a method presented by P. Debie, L. Martens and D. De Zutter has been used. The method is based on three simple DC measurements and the resistance values are received through numerical iterations. It is illustrated in this paper that the parasitic resistances of MESFET's can be calculated analytically using the given method. Therefore, numerical iterations are avoided and the extraction becomes faster. The resistance measurements show that the method is sensitive to the accuracy of the measured voltages. The repeatability can be increased by data processing the measured data.

U2 - 10.1238/Physica.Topical.101a00067

DO - 10.1238/Physica.Topical.101a00067

M3 - Article

SN - 0281-1847

VL - 2002

SP - 67

EP - 69

JO - Physica Scripta

JF - Physica Scripta

IS - T101

ER -

Analytical determination of parasitic resistances in GaAs MESFET´s

Abstract

Access to Document

Fingerprint

Cite this