Analytical modeling of contact resistance in organic transistors

A. Bonea, Tomi Hassinen, B.A. Ofrim, D.C. Bonfert, P. Svasta

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

4 Citations (Scopus)

Abstract

Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.
Original languageEnglish
Title of host publicationProceedings of the International Semiconductor Conference, CAS 2012
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages399-402
ISBN (Electronic)978-1-4673-0738-3
ISBN (Print)978-1-4673-0736-9, 978-1-4673-0737-6
DOIs
Publication statusPublished - 2012
MoE publication typeNot Eligible
Event35th International Semiconductor Conference, CAS 2012 - Sinaia, Romania
Duration: 15 Nov 201217 Nov 2012

Conference

Conference35th International Semiconductor Conference, CAS 2012
Abbreviated titleCAS 2012
CountryRomania
CitySinaia
Period15/11/1217/11/12

Fingerprint

contact resistance
transistors
thin films
simulation
direct current
electrodes
symmetry
electronics

Cite this

Bonea, A., Hassinen, T., Ofrim, B. A., Bonfert, D. C., & Svasta, P. (2012). Analytical modeling of contact resistance in organic transistors. In Proceedings of the International Semiconductor Conference, CAS 2012 (pp. 399-402). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/SMICND.2012.6400748
Bonea, A. ; Hassinen, Tomi ; Ofrim, B.A. ; Bonfert, D.C. ; Svasta, P. / Analytical modeling of contact resistance in organic transistors. Proceedings of the International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. pp. 399-402
@inproceedings{c4754ad25c9a4fa69f181ae72ff0210d,
title = "Analytical modeling of contact resistance in organic transistors",
abstract = "Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.",
author = "A. Bonea and Tomi Hassinen and B.A. Ofrim and D.C. Bonfert and P. Svasta",
year = "2012",
doi = "10.1109/SMICND.2012.6400748",
language = "English",
isbn = "978-1-4673-0736-9",
pages = "399--402",
booktitle = "Proceedings of the International Semiconductor Conference, CAS 2012",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
address = "United States",

}

Bonea, A, Hassinen, T, Ofrim, BA, Bonfert, DC & Svasta, P 2012, Analytical modeling of contact resistance in organic transistors. in Proceedings of the International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers , pp. 399-402, 35th International Semiconductor Conference, CAS 2012, Sinaia, Romania, 15/11/12. https://doi.org/10.1109/SMICND.2012.6400748

Analytical modeling of contact resistance in organic transistors. / Bonea, A.; Hassinen, Tomi; Ofrim, B.A.; Bonfert, D.C.; Svasta, P.

Proceedings of the International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. p. 399-402.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Analytical modeling of contact resistance in organic transistors

AU - Bonea, A.

AU - Hassinen, Tomi

AU - Ofrim, B.A.

AU - Bonfert, D.C.

AU - Svasta, P.

PY - 2012

Y1 - 2012

N2 - Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.

AB - Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.

U2 - 10.1109/SMICND.2012.6400748

DO - 10.1109/SMICND.2012.6400748

M3 - Conference article in proceedings

SN - 978-1-4673-0736-9

SN - 978-1-4673-0737-6

SP - 399

EP - 402

BT - Proceedings of the International Semiconductor Conference, CAS 2012

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Bonea A, Hassinen T, Ofrim BA, Bonfert DC, Svasta P. Analytical modeling of contact resistance in organic transistors. In Proceedings of the International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers . 2012. p. 399-402 https://doi.org/10.1109/SMICND.2012.6400748