Analytical modeling of contact resistance in organic transistors

A. Bonea, Tomi Hassinen, B.A. Ofrim, D.C. Bonfert, P. Svasta

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    4 Citations (Scopus)

    Abstract

    Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.
    Original languageEnglish
    Title of host publicationProceedings of the International Semiconductor Conference, CAS 2012
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages399-402
    ISBN (Electronic)978-1-4673-0738-3
    ISBN (Print)978-1-4673-0736-9, 978-1-4673-0737-6
    DOIs
    Publication statusPublished - 2012
    MoE publication typeNot Eligible
    Event35th International Semiconductor Conference, CAS 2012 - Sinaia, Romania
    Duration: 15 Nov 201217 Nov 2012

    Conference

    Conference35th International Semiconductor Conference, CAS 2012
    Abbreviated titleCAS 2012
    CountryRomania
    CitySinaia
    Period15/11/1217/11/12

    Fingerprint

    contact resistance
    transistors
    thin films
    simulation
    direct current
    electrodes
    symmetry
    electronics

    Cite this

    Bonea, A., Hassinen, T., Ofrim, B. A., Bonfert, D. C., & Svasta, P. (2012). Analytical modeling of contact resistance in organic transistors. In Proceedings of the International Semiconductor Conference, CAS 2012 (pp. 399-402). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/SMICND.2012.6400748
    Bonea, A. ; Hassinen, Tomi ; Ofrim, B.A. ; Bonfert, D.C. ; Svasta, P. / Analytical modeling of contact resistance in organic transistors. Proceedings of the International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. pp. 399-402
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    title = "Analytical modeling of contact resistance in organic transistors",
    abstract = "Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.",
    author = "A. Bonea and Tomi Hassinen and B.A. Ofrim and D.C. Bonfert and P. Svasta",
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    language = "English",
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    Bonea, A, Hassinen, T, Ofrim, BA, Bonfert, DC & Svasta, P 2012, Analytical modeling of contact resistance in organic transistors. in Proceedings of the International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers , pp. 399-402, 35th International Semiconductor Conference, CAS 2012, Sinaia, Romania, 15/11/12. https://doi.org/10.1109/SMICND.2012.6400748

    Analytical modeling of contact resistance in organic transistors. / Bonea, A.; Hassinen, Tomi; Ofrim, B.A.; Bonfert, D.C.; Svasta, P.

    Proceedings of the International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. p. 399-402.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    T1 - Analytical modeling of contact resistance in organic transistors

    AU - Bonea, A.

    AU - Hassinen, Tomi

    AU - Ofrim, B.A.

    AU - Bonfert, D.C.

    AU - Svasta, P.

    PY - 2012

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    N2 - Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.

    AB - Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.

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    Bonea A, Hassinen T, Ofrim BA, Bonfert DC, Svasta P. Analytical modeling of contact resistance in organic transistors. In Proceedings of the International Semiconductor Conference, CAS 2012. IEEE Institute of Electrical and Electronic Engineers . 2012. p. 399-402 https://doi.org/10.1109/SMICND.2012.6400748