Abstract
Inductor properties were studied using three different silicon-on-insulator (SOI) substrates: two fusion bonded SOI wafers with different resistivities and a silicon-on-sapphire (SOS) substrate. Indentically processed inductors were manufactured on the two former wafers along with a bulk-Si wafer which was included as a reference. These three wafers were processed at VTT Microelectronics and the SOS inductors with the Peregrine 0.5 m UTSi CMOS technology. Comparison of measured Q factor of identical inductors indicated that the 4.5 m thick well conducting Si film does not degrade the inductor properties in fusion bonded SOI technology. The advantage of the fully insulating SOS seems to be surprisingly small at the least for the less optimized layouts used in this study.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 16th European Conference on Circuits Theory and Design, ECCTD'03 |
| Publisher | European Circuit Society |
| Pages | II-321 - II-324 |
| ISBN (Print) | 83-88309-95-1 |
| Publication status | Published - 2003 |
| MoE publication type | A4 Article in a conference publication |
| Event | 16th European Conference on Circuits Theory and Design, ECCTD'03 - Cracow, Poland Duration: 1 Sept 2003 → 4 Sept 2003 |
Conference
| Conference | 16th European Conference on Circuits Theory and Design, ECCTD'03 |
|---|---|
| Country/Territory | Poland |
| City | Cracow |
| Period | 1/09/03 → 4/09/03 |
Keywords
- inductor
- substrate effect
- RF
- bulk
- SOI