Analyzing substrate effect on inductor quality on different SOI and bulk substrate technologies

Jan Saijets, Markku Åberg

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Inductor properties were studied using three different silicon-on-insulator (SOI) substrates: two fusion bonded SOI wafers with different resistivities and a silicon-on-sapphire (SOS) substrate. Indentically processed inductors were manufactured on the two former wafers along with a bulk-Si wafer which was included as a reference. These three wafers were processed at VTT Microelectronics and the SOS inductors with the Peregrine 0.5 m UTSi CMOS technology. Comparison of measured Q factor of identical inductors indicated that the 4.5 m thick well conducting Si film does not degrade the inductor properties in fusion bonded SOI technology. The advantage of the fully insulating SOS seems to be surprisingly small at the least for the less optimized layouts used in this study.
    Original languageEnglish
    Title of host publicationProceedings of the 16th European Conference on Circuits Theory and Design, ECCTD'03
    PagesII-321 - II-324
    Publication statusPublished - 2003
    MoE publication typeA4 Article in a conference publication
    Event16th European Conference on Circuits Theory and Design, ECCTD'03 - Cracow, Poland
    Duration: 1 Sep 20034 Sep 2003

    Conference

    Conference16th European Conference on Circuits Theory and Design, ECCTD'03
    CountryPoland
    CityCracow
    Period1/09/034/09/03

    Keywords

    • inductor
    • substrate effect
    • RF
    • bulk
    • SOI

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  • Cite this

    Saijets, J., & Åberg, M. (2003). Analyzing substrate effect on inductor quality on different SOI and bulk substrate technologies. In Proceedings of the 16th European Conference on Circuits Theory and Design, ECCTD'03 (pp. II-321 - II-324)