Annealing behaviour of aluminium-implanted InP

Vesa Kyllönen; J. Räisänen; Tiina Seppälä; T. Ahlgren; Jari Likonen

doi:10.1016/S0168-583X(99)00756-9

Annealing behaviour of aluminium-implanted InP

Vesa Kyllönen (Corresponding Author), J. Räisänen, Tiina Seppälä, T. Ahlgren, Jari Likonen

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV ²⁷Al⁺ ions. The implantation doses were 1 x 10¹⁵ and 1 x 10¹⁶ cm^-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 10¹⁶ cm^-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution and a significant aluminium surface enrichment took place. The coefficients of Al migration were determined by fitting a concentration independent solution of the diffusion equation to the experimental depth profiles. The deduced activation energy and frequency factor for aluminium migration in implanted InP are 0.78 eV and 5.5 x 10⁵ nm² / s, respectively. The effect of defects on the Al migration is discussed. Rutherford backscattering (RBS) spectra measured along ‹100› channeling direction for 120 keV, 10¹⁶ cm⁻² implanted samples indicated a loss of crystalline structure near the surface both in the as-implanted and in the annealed samples.

Original language	English
Pages (from-to)	673 - 676
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume	161-163
DOIs	https://doi.org/10.1016/S0168-583X(99)00756-9
Publication status	Published - 2000
MoE publication type	A1 Journal article-refereed

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@article{72a4d44e96f14eeaafd950c72c3e267b,

title = "Annealing behaviour of aluminium-implanted InP",

abstract = "The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution and a significant aluminium surface enrichment took place. The coefficients of Al migration were determined by fitting a concentration independent solution of the diffusion equation to the experimental depth profiles. The deduced activation energy and frequency factor for aluminium migration in implanted InP are 0.78 eV and 5.5 x 105 nm2 / s, respectively. The effect of defects on the Al migration is discussed. Rutherford backscattering (RBS) spectra measured along ‹100› channeling direction for 120 keV, 1016 cm−2 implanted samples indicated a loss of crystalline structure near the surface both in the as-implanted and in the annealed samples.",

author = "Vesa Kyll{\"o}nen and J. R{\"a}is{\"a}nen and Tiina Sepp{\"a}l{\"a} and T. Ahlgren and Jari Likonen",

note = "Project code: KET1434",

year = "2000",

doi = "10.1016/S0168-583X(99)00756-9",

language = "English",

volume = "161-163",

pages = "673 -- 676",

journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Annealing behaviour of aluminium-implanted InP

AU - Kyllönen, Vesa

AU - Räisänen, J.

AU - Seppälä, Tiina

AU - Ahlgren, T.

AU - Likonen, Jari

N1 - Project code: KET1434

PY - 2000

Y1 - 2000

N2 - The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution and a significant aluminium surface enrichment took place. The coefficients of Al migration were determined by fitting a concentration independent solution of the diffusion equation to the experimental depth profiles. The deduced activation energy and frequency factor for aluminium migration in implanted InP are 0.78 eV and 5.5 x 105 nm2 / s, respectively. The effect of defects on the Al migration is discussed. Rutherford backscattering (RBS) spectra measured along ‹100› channeling direction for 120 keV, 1016 cm−2 implanted samples indicated a loss of crystalline structure near the surface both in the as-implanted and in the annealed samples.

AB - The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution and a significant aluminium surface enrichment took place. The coefficients of Al migration were determined by fitting a concentration independent solution of the diffusion equation to the experimental depth profiles. The deduced activation energy and frequency factor for aluminium migration in implanted InP are 0.78 eV and 5.5 x 105 nm2 / s, respectively. The effect of defects on the Al migration is discussed. Rutherford backscattering (RBS) spectra measured along ‹100› channeling direction for 120 keV, 1016 cm−2 implanted samples indicated a loss of crystalline structure near the surface both in the as-implanted and in the annealed samples.

U2 - 10.1016/S0168-583X(99)00756-9

DO - 10.1016/S0168-583X(99)00756-9

M3 - Article

SN - 0168-583X

VL - 161-163

SP - 673

EP - 676

JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

ER -

Annealing behaviour of aluminium-implanted InP

Abstract

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