Annealing behaviour of deuterium in silicon doped carbon films

Jari Likonen, E. Vainonen-Ahlgren, T. Ahlgren, Sari Lehto, T. Sajavaara, W. Rydman, J. Keinonen, J. Katainen, C. Wu

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.
Original languageEnglish
Pages (from-to)445-450
JournalContributions to Plasma Physics
Volume42
Issue number2-4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint Dive into the research topics of 'Annealing behaviour of deuterium in silicon doped carbon films'. Together they form a unique fingerprint.

Cite this