TY - JOUR
T1 - Annealing behaviour of deuterium in silicon doped carbon films
AU - Likonen, Jari
AU - Vainonen-Ahlgren, E.
AU - Ahlgren, T.
AU - Lehto, Sari
AU - Sajavaara, T.
AU - Rydman, W.
AU - Keinonen, J.
AU - Katainen, J.
AU - Wu, C.
N1 - Project code: 14SIMS/EFDA
PY - 2002
Y1 - 2002
N2 - Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.
AB - Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.
U2 - 10.1002/1521-3986(200204)42:2/4<445::AID-CTPP445>3.0.CO;2-P
DO - 10.1002/1521-3986(200204)42:2/4<445::AID-CTPP445>3.0.CO;2-P
M3 - Article
SN - 0863-1042
VL - 42
SP - 445
EP - 450
JO - Contributions to Plasma Physics
JF - Contributions to Plasma Physics
IS - 2-4
ER -
