Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.
|Journal||Contributions to Plasma Physics|
|Publication status||Published - 2002|
|MoE publication type||A1 Journal article-refereed|
Likonen, J., Vainonen-Ahlgren, E., Ahlgren, T., Lehto, S., Sajavaara, T., Rydman, W., Keinonen, J., Katainen, J., & Wu, C. (2002). Annealing behaviour of deuterium in silicon doped carbon films. Contributions to Plasma Physics, 42(2-4), 445-450. https://doi.org/10.1002/1521-3986(200204)42:2/4<445::AID-CTPP445>3.0.CO;2-P