Annealing behaviour of deuterium in silicon doped carbon films

Jari Likonen, E. Vainonen-Ahlgren, T. Ahlgren, Sari Lehto, T. Sajavaara, W. Rydman, J. Keinonen, J. Katainen, C. Wu

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Abstract

Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.
Original languageEnglish
Pages (from-to)445-450
JournalContributions to Plasma Physics
Volume42
Issue number2-4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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Likonen, J., Vainonen-Ahlgren, E., Ahlgren, T., Lehto, S., Sajavaara, T., Rydman, W., Keinonen, J., Katainen, J., & Wu, C. (2002). Annealing behaviour of deuterium in silicon doped carbon films. Contributions to Plasma Physics, 42(2-4), 445-450. https://doi.org/10.1002/1521-3986(200204)42:2/4<445::AID-CTPP445>3.0.CO;2-P