Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 445-450 |
| Journal | Contributions to Plasma Physics |
| Volume | 42 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - 2002 |
| MoE publication type | A1 Journal article-refereed |
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Annealing behaviour of deuterium in silicon doped carbon films. / Likonen, Jari; Vainonen-Ahlgren, E.; Ahlgren, T.; Lehto, Sari; Sajavaara, T.; Rydman, W.; Keinonen, J.; Katainen, J.; Wu, C.
In: Contributions to Plasma Physics, Vol. 42, No. 2-4, 2002, p. 445-450.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Annealing behaviour of deuterium in silicon doped carbon films
AU - Likonen, Jari
AU - Vainonen-Ahlgren, E.
AU - Ahlgren, T.
AU - Lehto, Sari
AU - Sajavaara, T.
AU - Rydman, W.
AU - Keinonen, J.
AU - Katainen, J.
AU - Wu, C.
N1 - Project code: 14SIMS/EFDA
PY - 2002
Y1 - 2002
N2 - Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.
AB - Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.
U2 - 10.1002/1521-3986(200204)42:2/4<445::AID-CTPP445>3.0.CO;2-P
DO - 10.1002/1521-3986(200204)42:2/4<445::AID-CTPP445>3.0.CO;2-P
M3 - Article
VL - 42
SP - 445
EP - 450
JO - Contributions to Plasma Physics
JF - Contributions to Plasma Physics
SN - 0863-1042
IS - 2-4
ER -