Annealing behaviour of deuterium in silicon doped carbon films

Jari Likonen, E. Vainonen-Ahlgren, T. Ahlgren, Sari Lehto, T. Sajavaara, W. Rydman, J. Keinonen, J. Katainen, C. Wu

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.
Original languageEnglish
Pages (from-to)445-450
JournalContributions to Plasma Physics
Volume42
Issue number2-4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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deuterium
annealing
carbon
arc discharges
silicon
profiles
secondary ion mass spectrometry
diffusion coefficient
trapping
activation energy
atmospheres

Cite this

Likonen, Jari ; Vainonen-Ahlgren, E. ; Ahlgren, T. ; Lehto, Sari ; Sajavaara, T. ; Rydman, W. ; Keinonen, J. ; Katainen, J. ; Wu, C. / Annealing behaviour of deuterium in silicon doped carbon films. In: Contributions to Plasma Physics. 2002 ; Vol. 42, No. 2-4. pp. 445-450.
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title = "Annealing behaviour of deuterium in silicon doped carbon films",
abstract = "Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.{\%} of Si, respectively.",
author = "Jari Likonen and E. Vainonen-Ahlgren and T. Ahlgren and Sari Lehto and T. Sajavaara and W. Rydman and J. Keinonen and J. Katainen and C. Wu",
note = "Project code: 14SIMS/EFDA",
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Likonen, J, Vainonen-Ahlgren, E, Ahlgren, T, Lehto, S, Sajavaara, T, Rydman, W, Keinonen, J, Katainen, J & Wu, C 2002, 'Annealing behaviour of deuterium in silicon doped carbon films', Contributions to Plasma Physics, vol. 42, no. 2-4, pp. 445-450. https://doi.org/10.1002/1521-3986(200204)42:2/4<445::AID-CTPP445>3.0.CO;2-P

Annealing behaviour of deuterium in silicon doped carbon films. / Likonen, Jari; Vainonen-Ahlgren, E.; Ahlgren, T.; Lehto, Sari; Sajavaara, T.; Rydman, W.; Keinonen, J.; Katainen, J.; Wu, C.

In: Contributions to Plasma Physics, Vol. 42, No. 2-4, 2002, p. 445-450.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Annealing behaviour of deuterium in silicon doped carbon films

AU - Likonen, Jari

AU - Vainonen-Ahlgren, E.

AU - Ahlgren, T.

AU - Lehto, Sari

AU - Sajavaara, T.

AU - Rydman, W.

AU - Keinonen, J.

AU - Katainen, J.

AU - Wu, C.

N1 - Project code: 14SIMS/EFDA

PY - 2002

Y1 - 2002

N2 - Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.

AB - Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non‐trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.

U2 - 10.1002/1521-3986(200204)42:2/4<445::AID-CTPP445>3.0.CO;2-P

DO - 10.1002/1521-3986(200204)42:2/4<445::AID-CTPP445>3.0.CO;2-P

M3 - Article

VL - 42

SP - 445

EP - 450

JO - Contributions to Plasma Physics

JF - Contributions to Plasma Physics

SN - 0863-1042

IS - 2-4

ER -