Annealing behaviour of high-dose-implanted nitrogen in InP

Jari Likonen, K. Väkeväinen, T. Ahlgren, Jyrki Räisänen, Esko Rauhala, J. Keinonen

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Abstract

Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP implanted with 1 × 1016 30 keV15N+ ions cm−2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to loss and redistribution of nitrogen in the temperature range from 575 to 675 °C. At temperatures from 575 to 600 °C, rapid migration of nitrogen towards the sample surface was observed. The n-type InP material had a very dominant tendency for surface nitrogen build-up, whereas the p-type material had a markedly smaller surface peak in the nitrogen distribution. The surface peak in n-type material is due to sulphur acting partly as a diffusion barrier. SIMS analyses showed sulphur build-up on the surface in the course of annealing. At temperatures from 600 to 675 °C, the nitrogen profiles of n- and p-type InP were similar. A small loss of nitrogen was observed at 625–675 °C. Two different recovery stages were observed at 575–600°C and at 625–650 °C. The corresponding activation energies for nitrogen loss are 2.9 and 3.0 eV, respectively.
Original languageEnglish
Pages (from-to)463-468
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume62
Issue number5
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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Nitrogen
Annealing
nitrogen
dosage
annealing
Secondary ion mass spectrometry
Sulfur
secondary ion mass spectrometry
sulfur
Diffusion barriers
Rutherford backscattering spectroscopy
profiles
Temperature
Spectrometry
temperature
implantation
backscattering
tendencies
Activation energy
recovery

Cite this

Likonen, J., Väkeväinen, K., Ahlgren, T., Räisänen, J., Rauhala, E., & Keinonen, J. (1996). Annealing behaviour of high-dose-implanted nitrogen in InP. Applied Physics A: Materials Science and Processing, 62(5), 463-468. https://doi.org/10.1007%2FBF01567118
Likonen, Jari ; Väkeväinen, K. ; Ahlgren, T. ; Räisänen, Jyrki ; Rauhala, Esko ; Keinonen, J. / Annealing behaviour of high-dose-implanted nitrogen in InP. In: Applied Physics A: Materials Science and Processing. 1996 ; Vol. 62, No. 5. pp. 463-468.
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abstract = "Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP implanted with 1 × 1016 30 keV15N+ ions cm−2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to loss and redistribution of nitrogen in the temperature range from 575 to 675 °C. At temperatures from 575 to 600 °C, rapid migration of nitrogen towards the sample surface was observed. The n-type InP material had a very dominant tendency for surface nitrogen build-up, whereas the p-type material had a markedly smaller surface peak in the nitrogen distribution. The surface peak in n-type material is due to sulphur acting partly as a diffusion barrier. SIMS analyses showed sulphur build-up on the surface in the course of annealing. At temperatures from 600 to 675 °C, the nitrogen profiles of n- and p-type InP were similar. A small loss of nitrogen was observed at 625–675 °C. Two different recovery stages were observed at 575–600°C and at 625–650 °C. The corresponding activation energies for nitrogen loss are 2.9 and 3.0 eV, respectively.",
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Likonen, J, Väkeväinen, K, Ahlgren, T, Räisänen, J, Rauhala, E & Keinonen, J 1996, 'Annealing behaviour of high-dose-implanted nitrogen in InP', Applied Physics A: Materials Science and Processing, vol. 62, no. 5, pp. 463-468. https://doi.org/10.1007%2FBF01567118

Annealing behaviour of high-dose-implanted nitrogen in InP. / Likonen, Jari; Väkeväinen, K.; Ahlgren, T.; Räisänen, Jyrki; Rauhala, Esko; Keinonen, J.

In: Applied Physics A: Materials Science and Processing, Vol. 62, No. 5, 1996, p. 463-468.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Annealing behaviour of high-dose-implanted nitrogen in InP

AU - Likonen, Jari

AU - Väkeväinen, K.

AU - Ahlgren, T.

AU - Räisänen, Jyrki

AU - Rauhala, Esko

AU - Keinonen, J.

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AB - Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP implanted with 1 × 1016 30 keV15N+ ions cm−2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to loss and redistribution of nitrogen in the temperature range from 575 to 675 °C. At temperatures from 575 to 600 °C, rapid migration of nitrogen towards the sample surface was observed. The n-type InP material had a very dominant tendency for surface nitrogen build-up, whereas the p-type material had a markedly smaller surface peak in the nitrogen distribution. The surface peak in n-type material is due to sulphur acting partly as a diffusion barrier. SIMS analyses showed sulphur build-up on the surface in the course of annealing. At temperatures from 600 to 675 °C, the nitrogen profiles of n- and p-type InP were similar. A small loss of nitrogen was observed at 625–675 °C. Two different recovery stages were observed at 575–600°C and at 625–650 °C. The corresponding activation energies for nitrogen loss are 2.9 and 3.0 eV, respectively.

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EP - 468

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SN - 0947-8396

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