Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 463-468 |
| Number of pages | 6 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 62 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1996 |
| MoE publication type | A1 Journal article-refereed |
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Annealing behaviour of high-dose-implanted nitrogen in InP. / Likonen, Jari; Väkeväinen, K.; Ahlgren, T.; Räisänen, Jyrki; Rauhala, Esko; Keinonen, J.
In: Applied Physics A: Materials Science and Processing, Vol. 62, No. 5, 1996, p. 463-468.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Annealing behaviour of high-dose-implanted nitrogen in InP
AU - Likonen, Jari
AU - Väkeväinen, K.
AU - Ahlgren, T.
AU - Räisänen, Jyrki
AU - Rauhala, Esko
AU - Keinonen, J.
N1 - Project code: KET4134
PY - 1996
Y1 - 1996
N2 - Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP implanted with 1 × 1016 30 keV15N+ ions cm−2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to loss and redistribution of nitrogen in the temperature range from 575 to 675 °C. At temperatures from 575 to 600 °C, rapid migration of nitrogen towards the sample surface was observed. The n-type InP material had a very dominant tendency for surface nitrogen build-up, whereas the p-type material had a markedly smaller surface peak in the nitrogen distribution. The surface peak in n-type material is due to sulphur acting partly as a diffusion barrier. SIMS analyses showed sulphur build-up on the surface in the course of annealing. At temperatures from 600 to 675 °C, the nitrogen profiles of n- and p-type InP were similar. A small loss of nitrogen was observed at 625–675 °C. Two different recovery stages were observed at 575–600°C and at 625–650 °C. The corresponding activation energies for nitrogen loss are 2.9 and 3.0 eV, respectively.
AB - Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP implanted with 1 × 1016 30 keV15N+ ions cm−2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to loss and redistribution of nitrogen in the temperature range from 575 to 675 °C. At temperatures from 575 to 600 °C, rapid migration of nitrogen towards the sample surface was observed. The n-type InP material had a very dominant tendency for surface nitrogen build-up, whereas the p-type material had a markedly smaller surface peak in the nitrogen distribution. The surface peak in n-type material is due to sulphur acting partly as a diffusion barrier. SIMS analyses showed sulphur build-up on the surface in the course of annealing. At temperatures from 600 to 675 °C, the nitrogen profiles of n- and p-type InP were similar. A small loss of nitrogen was observed at 625–675 °C. Two different recovery stages were observed at 575–600°C and at 625–650 °C. The corresponding activation energies for nitrogen loss are 2.9 and 3.0 eV, respectively.
U2 - 10.1007%2FBF01567118
DO - 10.1007%2FBF01567118
M3 - Article
VL - 62
SP - 463
EP - 468
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 5
ER -