Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

Janne Pakarinen; V. Polojärvi; A. Aho; Pasi Laukkanen; C.S. Peng; A. Schramm; A. Tukiainen; M. Pessa

doi:10.1063/1.3086298

Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

Janne Pakarinen^*
, V. Polojärvi
, A. Aho
, Pasi Laukkanen
, C.S. Peng
, A. Schramm
, A. Tukiainen
, M. Pessa

^*Corresponding author for this work

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

Abstract

We investigated the effects of postgrowth thermal annealing on optical properties of beryllium-doped InAs quantum dot (QD) heterostructures grown by molecular beam epitaxy. Thermal annealing induced a blueshift of up to 200 meV in light emission from an undoped sample, while a sample having GaAs layer heavily doped with beryllium on top of the QD region exhibited a much smaller blueshift. This phenomenon is interpreted as due to suppression of annealing-induced In/Ga interdiffusion.

Original language	English
Article number	072105
Journal	Applied Physics Letters
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.3086298
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

Funding

The corresponding author (J.P.) acknowledges financial support from the Graduate School of Tampere University of Technology (Finland). This work was supported, in part, by the Academy of Finland within NEONATE and NANOTOMO Projects.

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abstract = "We investigated the effects of postgrowth thermal annealing on optical properties of beryllium-doped InAs quantum dot (QD) heterostructures grown by molecular beam epitaxy. Thermal annealing induced a blueshift of up to 200 meV in light emission from an undoped sample, while a sample having GaAs layer heavily doped with beryllium on top of the QD region exhibited a much smaller blueshift. This phenomenon is interpreted as due to suppression of annealing-induced In/Ga interdiffusion.",

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T2 - A stabilizing effect of beryllium doping

AU - Pakarinen, Janne

AU - Polojärvi, V.

AU - Aho, A.

AU - Laukkanen, Pasi

AU - Peng, C.S.

AU - Schramm, A.

AU - Tukiainen, A.

AU - Pessa, M.

PY - 2009

Y1 - 2009

N2 - We investigated the effects of postgrowth thermal annealing on optical properties of beryllium-doped InAs quantum dot (QD) heterostructures grown by molecular beam epitaxy. Thermal annealing induced a blueshift of up to 200 meV in light emission from an undoped sample, while a sample having GaAs layer heavily doped with beryllium on top of the QD region exhibited a much smaller blueshift. This phenomenon is interpreted as due to suppression of annealing-induced In/Ga interdiffusion.

AB - We investigated the effects of postgrowth thermal annealing on optical properties of beryllium-doped InAs quantum dot (QD) heterostructures grown by molecular beam epitaxy. Thermal annealing induced a blueshift of up to 200 meV in light emission from an undoped sample, while a sample having GaAs layer heavily doped with beryllium on top of the QD region exhibited a much smaller blueshift. This phenomenon is interpreted as due to suppression of annealing-induced In/Ga interdiffusion.

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ER -

Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

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