Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements

P.S. Heljo*, K. Wolff, K. Lahtonen, M. Valden, P.R. Berger, Himadri Majumdar, D. Lupo

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    17 Citations (Scopus)

    Abstract

    In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.
    Original languageEnglish
    Pages (from-to)91-98
    JournalElectrochimica Acta
    Volume137
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

    Keywords

    • anodic oxidation
    • ultra-thin oxides
    • defect density analysis
    • negative differential resistance

    Fingerprint

    Dive into the research topics of 'Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements'. Together they form a unique fingerprint.

    Cite this