Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 91-98 |
| Journal | Electrochimica Acta |
| Volume | 137 |
| DOIs | |
| Publication status | Published - 2014 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- anodic oxidation
- ultra-thin oxides
- defect density analysis
- negative differential resistance
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Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements. / Heljo, P.S. (Corresponding Author); Wolff, K.; Lahtonen, K.; Valden, M.; Berger, P.R.; Majumdar, Himadri; Lupo, D.
In: Electrochimica Acta, Vol. 137, 2014, p. 91-98.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements
AU - Heljo, P.S.
AU - Wolff, K.
AU - Lahtonen, K.
AU - Valden, M.
AU - Berger, P.R.
AU - Majumdar, Himadri
AU - Lupo, D.
PY - 2014
Y1 - 2014
N2 - In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.
AB - In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.
KW - anodic oxidation
KW - ultra-thin oxides
KW - defect density analysis
KW - negative differential resistance
U2 - 10.1016/j.electacta.2014.05.157
DO - 10.1016/j.electacta.2014.05.157
M3 - Article
VL - 137
SP - 91
EP - 98
JO - Electrochimica Acta
JF - Electrochimica Acta
SN - 0013-4686
ER -