Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements

P.S. Heljo (Corresponding Author), K. Wolff, K. Lahtonen, M. Valden, P.R. Berger, Himadri Majumdar, D. Lupo

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.
Original languageEnglish
Pages (from-to)91-98
JournalElectrochimica Acta
Volume137
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Fingerprint

Anodic oxidation
Tin oxides
Indium
Diodes
Data storage equipment
Substrates
Titanium
Electrochemical impedance spectroscopy
Delamination
Electronic equipment
X ray photoelectron spectroscopy
indium tin oxide
Glass
Temperature

Keywords

  • anodic oxidation
  • ultra-thin oxides
  • defect density analysis
  • negative differential resistance

Cite this

Heljo, P.S. ; Wolff, K. ; Lahtonen, K. ; Valden, M. ; Berger, P.R. ; Majumdar, Himadri ; Lupo, D. / Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements. In: Electrochimica Acta. 2014 ; Vol. 137. pp. 91-98.
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abstract = "In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.",
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Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements. / Heljo, P.S. (Corresponding Author); Wolff, K.; Lahtonen, K.; Valden, M.; Berger, P.R.; Majumdar, Himadri; Lupo, D.

In: Electrochimica Acta, Vol. 137, 2014, p. 91-98.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements

AU - Heljo, P.S.

AU - Wolff, K.

AU - Lahtonen, K.

AU - Valden, M.

AU - Berger, P.R.

AU - Majumdar, Himadri

AU - Lupo, D.

PY - 2014

Y1 - 2014

N2 - In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.

AB - In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.

KW - anodic oxidation

KW - ultra-thin oxides

KW - defect density analysis

KW - negative differential resistance

U2 - 10.1016/j.electacta.2014.05.157

DO - 10.1016/j.electacta.2014.05.157

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VL - 137

SP - 91

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JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

ER -