Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements

P.S. Heljo; K. Wolff; K. Lahtonen; M. Valden; P.R. Berger; Himadri Majumdar; D. Lupo

doi:10.1016/j.electacta.2014.05.157

Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements

P.S. Heljo (Corresponding Author), K. Wolff, K. Lahtonen, M. Valden, P.R. Berger, Himadri Majumdar, D. Lupo

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Abstract

In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.

Original language	English
Pages (from-to)	91-98
Journal	Electrochimica Acta
Volume	137
DOIs	https://doi.org/10.1016/j.electacta.2014.05.157
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

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Keywords

anodic oxidation
ultra-thin oxides
defect density analysis
negative differential resistance

Cite this

Heljo, P. S., Wolff, K., Lahtonen, K., Valden, M., Berger, P. R., Majumdar, H., & Lupo, D. (2014). Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements. Electrochimica Acta, 137, 91-98. https://doi.org/10.1016/j.electacta.2014.05.157

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title = "Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements",

abstract = "In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.",

keywords = "anodic oxidation, ultra-thin oxides, defect density analysis, negative differential resistance",

author = "P.S. Heljo and K. Wolff and K. Lahtonen and M. Valden and P.R. Berger and Himadri Majumdar and D. Lupo",

year = "2014",

doi = "10.1016/j.electacta.2014.05.157",

language = "English",

volume = "137",

pages = "91--98",

journal = "Electrochimica Acta",

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Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements. / Heljo, P.S. (Corresponding Author); Wolff, K.; Lahtonen, K.; Valden, M.; Berger, P.R.; Majumdar, Himadri; Lupo, D.

In: Electrochimica Acta, Vol. 137, 2014, p. 91-98.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Anodic oxidation of ultra-thin Ti layers on ITO substrates and their application in organic electronic memory elements

AU - Heljo, P.S.

AU - Wolff, K.

AU - Lahtonen, K.

AU - Valden, M.

AU - Berger, P.R.

AU - Majumdar, Himadri

AU - Lupo, D.

PY - 2014

Y1 - 2014

N2 - In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.

AB - In this work, controlled anodic oxidation is reported for ultra-thin (3 nm thick) titanium layers on indium tin oxide (ITO) coated glass substrates. A physical explanation is also provided for the origin of the delamination process of the Ti during the anodic oxidation. The properties of the fabricated layers are studied using electrochemical impedance spectroscopy (EIS) and X-ray Photoelectron Spectroscopy (XPS). In addition, one intriguing application is demonstrated for the anodized layers: their use as an interfacial barrier in organic diodes. Diodes containing an electrochemically fabricated TiO 2 barrier layer exhibit clear room temperature negative differential resistance (NDR) and a peak-to-valley current ratio (PVCR) of 3.6. The reference diodes without the TiO2 layer show normal diode characteristics with no observable NDR. The NDR diodes have potential applications as memory elements for large-area electronics.

KW - anodic oxidation

KW - ultra-thin oxides

KW - defect density analysis

KW - negative differential resistance

U2 - 10.1016/j.electacta.2014.05.157

DO - 10.1016/j.electacta.2014.05.157

M3 - Article

VL - 137

SP - 91

EP - 98

JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

ER -

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10.1016/j.electacta.2014.05.157