Abstract
In this work, controlled anodic oxidation is reported for
ultra-thin (3 nm thick) titanium layers on indium tin
oxide (ITO) coated glass substrates. A physical
explanation is also provided for the origin of the
delamination process of the Ti during the anodic
oxidation. The properties of the fabricated layers are
studied using electrochemical impedance spectroscopy
(EIS) and X-ray Photoelectron Spectroscopy (XPS). In
addition, one intriguing application is demonstrated for
the anodized layers: their use as an interfacial barrier
in organic diodes. Diodes containing an electrochemically
fabricated TiO 2 barrier layer exhibit clear room
temperature negative differential resistance (NDR) and a
peak-to-valley current ratio (PVCR) of 3.6. The reference
diodes without the TiO2 layer show normal diode
characteristics with no observable NDR. The NDR diodes
have potential applications as memory elements for
large-area electronics.
Original language | English |
---|---|
Pages (from-to) | 91-98 |
Journal | Electrochimica Acta |
Volume | 137 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A1 Journal article-refereed |
Keywords
- anodic oxidation
- ultra-thin oxides
- defect density analysis
- negative differential resistance