Application of the contact electric resistance method for in situ investigation of semiconductor surface properties in electrolyte

L. Charny, Timo Saario (Corresponding Author), Viktor Marichev

    Research output: Contribution to journalArticleScientificpeer-review

    16 Citations (Scopus)

    Abstract

    The contact electric resistance method (CER) has been applied for in situ investigation of the charge transfer through the semiconductor surface under potentiostatic control in electrolytes. Single crystals of n- and p-GaAs were investigated. As a result of changing the electrochemical potential, two simultaneous tendencies of surface resistance changes were observed. The first type of resistance change, which occurs immediately after application of the potential, is caused by band bending at the surface charge region. The second type of resistance change, characterized by a power law dependence on time, is caused by adsorption and / or oxidation processes at the surface. The surface resistance sharply increases close to the As/As2O3 (As/HAsO2) equilibrium potential, but does not change at potentials close to the Ga/Ga(OH)3 equilibrium potential. In addition, the influence of the sulphur content of the electrolyte on the surface resistance was investigated in 0.01M, 0.1M and 1M Na2S borate buffer solutions. At potentials lower than −0.8 VSCE sulphur was found to adsorb competitively on GaAs and to prevent adsorption of borate and hydroxyl anions, resulting in reduction of the surface resistance.
    Original languageEnglish
    Pages (from-to)422-428
    Number of pages7
    JournalSurface Science
    Volume312
    Issue number3
    DOIs
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Electric contacts
    Surface resistance
    surface properties
    Electrolytes
    Surface properties
    electric contacts
    electrolytes
    Semiconductor materials
    Borates
    Sulfur
    Adsorption
    borates
    Surface charge
    Hydroxyl Radical
    sulfur
    Anions
    Charge transfer
    Buffers
    Negative ions
    Single crystals

    Cite this

    @article{bca53d8dfe0e43caab986c8db4fd8ef1,
    title = "Application of the contact electric resistance method for in situ investigation of semiconductor surface properties in electrolyte",
    abstract = "The contact electric resistance method (CER) has been applied for in situ investigation of the charge transfer through the semiconductor surface under potentiostatic control in electrolytes. Single crystals of n- and p-GaAs were investigated. As a result of changing the electrochemical potential, two simultaneous tendencies of surface resistance changes were observed. The first type of resistance change, which occurs immediately after application of the potential, is caused by band bending at the surface charge region. The second type of resistance change, characterized by a power law dependence on time, is caused by adsorption and / or oxidation processes at the surface. The surface resistance sharply increases close to the As/As2O3 (As/HAsO2) equilibrium potential, but does not change at potentials close to the Ga/Ga(OH)3 equilibrium potential. In addition, the influence of the sulphur content of the electrolyte on the surface resistance was investigated in 0.01M, 0.1M and 1M Na2S borate buffer solutions. At potentials lower than −0.8 VSCE sulphur was found to adsorb competitively on GaAs and to prevent adsorption of borate and hydroxyl anions, resulting in reduction of the surface resistance.",
    author = "L. Charny and Timo Saario and Viktor Marichev",
    note = "Project code: VAL370434",
    year = "1994",
    doi = "10.1016/0039-6028(94)90733-1",
    language = "English",
    volume = "312",
    pages = "422--428",
    journal = "Surface Science",
    issn = "0039-6028",
    publisher = "Elsevier",
    number = "3",

    }

    Application of the contact electric resistance method for in situ investigation of semiconductor surface properties in electrolyte. / Charny, L.; Saario, Timo (Corresponding Author); Marichev, Viktor.

    In: Surface Science, Vol. 312, No. 3, 1994, p. 422-428.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Application of the contact electric resistance method for in situ investigation of semiconductor surface properties in electrolyte

    AU - Charny, L.

    AU - Saario, Timo

    AU - Marichev, Viktor

    N1 - Project code: VAL370434

    PY - 1994

    Y1 - 1994

    N2 - The contact electric resistance method (CER) has been applied for in situ investigation of the charge transfer through the semiconductor surface under potentiostatic control in electrolytes. Single crystals of n- and p-GaAs were investigated. As a result of changing the electrochemical potential, two simultaneous tendencies of surface resistance changes were observed. The first type of resistance change, which occurs immediately after application of the potential, is caused by band bending at the surface charge region. The second type of resistance change, characterized by a power law dependence on time, is caused by adsorption and / or oxidation processes at the surface. The surface resistance sharply increases close to the As/As2O3 (As/HAsO2) equilibrium potential, but does not change at potentials close to the Ga/Ga(OH)3 equilibrium potential. In addition, the influence of the sulphur content of the electrolyte on the surface resistance was investigated in 0.01M, 0.1M and 1M Na2S borate buffer solutions. At potentials lower than −0.8 VSCE sulphur was found to adsorb competitively on GaAs and to prevent adsorption of borate and hydroxyl anions, resulting in reduction of the surface resistance.

    AB - The contact electric resistance method (CER) has been applied for in situ investigation of the charge transfer through the semiconductor surface under potentiostatic control in electrolytes. Single crystals of n- and p-GaAs were investigated. As a result of changing the electrochemical potential, two simultaneous tendencies of surface resistance changes were observed. The first type of resistance change, which occurs immediately after application of the potential, is caused by band bending at the surface charge region. The second type of resistance change, characterized by a power law dependence on time, is caused by adsorption and / or oxidation processes at the surface. The surface resistance sharply increases close to the As/As2O3 (As/HAsO2) equilibrium potential, but does not change at potentials close to the Ga/Ga(OH)3 equilibrium potential. In addition, the influence of the sulphur content of the electrolyte on the surface resistance was investigated in 0.01M, 0.1M and 1M Na2S borate buffer solutions. At potentials lower than −0.8 VSCE sulphur was found to adsorb competitively on GaAs and to prevent adsorption of borate and hydroxyl anions, resulting in reduction of the surface resistance.

    U2 - 10.1016/0039-6028(94)90733-1

    DO - 10.1016/0039-6028(94)90733-1

    M3 - Article

    VL - 312

    SP - 422

    EP - 428

    JO - Surface Science

    JF - Surface Science

    SN - 0039-6028

    IS - 3

    ER -