Applications of an all-polymer solution-processed high-performance transistor

Henrik Sandberg; Tomas G Bäcklund; Ronald Österbacka; Salme Jussila; Tapio Mäkelä; Henrik Stubb

doi:10.1016/j.synthmet.2005.08.024

Applications of an all-polymer solution-processed high-performance transistor

Henrik Sandberg (Corresponding Author), Tomas G Bäcklund, Ronald Österbacka, Salme Jussila, Tapio Mäkelä, Henrik Stubb

Research output: Contribution to journal › Article › Scientific › peer-review

18 Citations (Scopus)

Abstract

Low cost production and a simple manufacturing process are desired for organic field effect transistors, OFETs, even though this usually significantly lowers device performance. We report on applications and characterization of a high performance polymer field effect transistor that utilizes a hygroscopic insulator. The latter enables the device to be used as a sensor element to detect the presence of various solvents. We show a drastic change in conductivity and current modulation for some organic solvents. Furthermore, the use of the device in electric circuits is demonstrated by combining hygroscopic insulator field effect transistor (HIFET) devices in an inverter/amplifier circuit.

Original language	English
Pages (from-to)	662-665
Number of pages	4
Journal	Synthetic Metals
Volume	155
Issue number	3
DOIs	https://doi.org/10.1016/j.synthmet.2005.08.024
Publication status	Published - 1 Dec 2005
MoE publication type	A1 Journal article-refereed

Keywords

conductivity,organic transistor,polymer,polymer interfaces,polythiophene and derivatives,solution processing,transport measurements

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10.1016/j.synthmet.2005.08.024

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title = "Applications of an all-polymer solution-processed high-performance transistor",

abstract = "Low cost production and a simple manufacturing process are desired for organic field effect transistors, OFETs, even though this usually significantly lowers device performance. We report on applications and characterization of a high performance polymer field effect transistor that utilizes a hygroscopic insulator. The latter enables the device to be used as a sensor element to detect the presence of various solvents. We show a drastic change in conductivity and current modulation for some organic solvents. Furthermore, the use of the device in electric circuits is demonstrated by combining hygroscopic insulator field effect transistor (HIFET) devices in an inverter/amplifier circuit.",

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AU - Sandberg, Henrik

AU - Bäcklund, Tomas G

AU - Österbacka, Ronald

AU - Jussila, Salme

AU - Mäkelä, Tapio

AU - Stubb, Henrik

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Low cost production and a simple manufacturing process are desired for organic field effect transistors, OFETs, even though this usually significantly lowers device performance. We report on applications and characterization of a high performance polymer field effect transistor that utilizes a hygroscopic insulator. The latter enables the device to be used as a sensor element to detect the presence of various solvents. We show a drastic change in conductivity and current modulation for some organic solvents. Furthermore, the use of the device in electric circuits is demonstrated by combining hygroscopic insulator field effect transistor (HIFET) devices in an inverter/amplifier circuit.

AB - Low cost production and a simple manufacturing process are desired for organic field effect transistors, OFETs, even though this usually significantly lowers device performance. We report on applications and characterization of a high performance polymer field effect transistor that utilizes a hygroscopic insulator. The latter enables the device to be used as a sensor element to detect the presence of various solvents. We show a drastic change in conductivity and current modulation for some organic solvents. Furthermore, the use of the device in electric circuits is demonstrated by combining hygroscopic insulator field effect transistor (HIFET) devices in an inverter/amplifier circuit.

KW - conductivity,organic transistor,polymer,polymer interfaces,polythiophene and derivatives,solution processing,transport measurements

U2 - 10.1016/j.synthmet.2005.08.024

DO - 10.1016/j.synthmet.2005.08.024

M3 - Article

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JF - Synthetic Metals

SN - 0379-6779

IS - 3

ER -

Applications of an all-polymer solution-processed high-performance transistor

Abstract

Keywords

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