Abstract
Size dependence of resonator performance is studied in AlN and ZnO
resonators with FEM simulation, electrical measurements, and laser
interferometry. Eigenmode spectrum compression due to increased size of the
resonator leads to smoothening of the electrical response and flattening of
the vibrational at-resonance response as several modes can be simultaneously
excited near the device resonance frequency. This is seen both in simulations
and in measurements.
Original language | English |
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Title of host publication | Proceedings |
Subtitle of host publication | IEEE Ultrasonics Symposium, IUS 2007 |
Place of Publication | Piscataway, NJ, USA |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 1661-1664 |
ISBN (Print) | 978-1-4244-1383-6, 978-1-4244-1384-3 |
DOIs | |
Publication status | Published - 2007 |
MoE publication type | A4 Article in a conference publication |
Event | IEEE Ultrasonics Symposium, IUS 2007 - New York, NY, United States Duration: 28 Oct 2007 → 31 Oct 2007 |
Conference
Conference | IEEE Ultrasonics Symposium, IUS 2007 |
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Abbreviated title | IUS 2007 |
Country/Territory | United States |
City | New York, NY |
Period | 28/10/07 → 31/10/07 |
Keywords
- thin film
- BAW
- AlN
- ZnO
- plate wave dispersion
- coupling coefficient
- area