Area and dispersion dependence of vibration shape and coupling coefficient in thin film BAW resonators

Tuomas Pensala, Markku Ylilammi, Meltaus Johanna, Kimmo Kokkonen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

4 Citations (Scopus)

Abstract

Size dependence of resonator performance is studied in AlN and ZnO resonators with FEM simulation, electrical measurements, and laser interferometry. Eigenmode spectrum compression due to increased size of the resonator leads to smoothening of the electrical response and flattening of the vibrational at-resonance response as several modes can be simultaneously excited near the device resonance frequency. This is seen both in simulations and in measurements.
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationIEEE Ultrasonics Symposium, IUS 2007
Place of PublicationPiscataway, NJ, USA
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages1661-1664
ISBN (Print)978-1-4244-1383-6, 978-1-4244-1384-3
DOIs
Publication statusPublished - 2007
MoE publication typeA4 Article in a conference publication
EventIEEE Ultrasonics Symposium, IUS 2007 - New York, NY, United States
Duration: 28 Oct 200731 Oct 2007

Conference

ConferenceIEEE Ultrasonics Symposium, IUS 2007
Abbreviated titleIUS 2007
CountryUnited States
CityNew York, NY
Period28/10/0731/10/07

Fingerprint

coupling coefficients
resonators
vibration
coefficients
thin films
laser interferometry
flattening
electrical measurement
simulation

Keywords

  • thin film
  • BAW
  • AlN
  • ZnO
  • plate wave dispersion
  • coupling coefficient
  • area

Cite this

Pensala, T., Ylilammi, M., Johanna, M., & Kokkonen, K. (2007). Area and dispersion dependence of vibration shape and coupling coefficient in thin film BAW resonators. In Proceedings : IEEE Ultrasonics Symposium, IUS 2007 (pp. 1661-1664). Piscataway, NJ, USA: IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ULTSYM.2007.418
Pensala, Tuomas ; Ylilammi, Markku ; Johanna, Meltaus ; Kokkonen, Kimmo. / Area and dispersion dependence of vibration shape and coupling coefficient in thin film BAW resonators. Proceedings : IEEE Ultrasonics Symposium, IUS 2007. Piscataway, NJ, USA : IEEE Institute of Electrical and Electronic Engineers , 2007. pp. 1661-1664
@inproceedings{f625c126b67d4714af0b28478a59a697,
title = "Area and dispersion dependence of vibration shape and coupling coefficient in thin film BAW resonators",
abstract = "Size dependence of resonator performance is studied in AlN and ZnO resonators with FEM simulation, electrical measurements, and laser interferometry. Eigenmode spectrum compression due to increased size of the resonator leads to smoothening of the electrical response and flattening of the vibrational at-resonance response as several modes can be simultaneously excited near the device resonance frequency. This is seen both in simulations and in measurements.",
keywords = "thin film, BAW, AlN, ZnO, plate wave dispersion, coupling coefficient, area",
author = "Tuomas Pensala and Markku Ylilammi and Meltaus Johanna and Kimmo Kokkonen",
note = "Project code: 3266",
year = "2007",
doi = "10.1109/ULTSYM.2007.418",
language = "English",
isbn = "978-1-4244-1383-6",
pages = "1661--1664",
booktitle = "Proceedings",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
address = "United States",

}

Pensala, T, Ylilammi, M, Johanna, M & Kokkonen, K 2007, Area and dispersion dependence of vibration shape and coupling coefficient in thin film BAW resonators. in Proceedings : IEEE Ultrasonics Symposium, IUS 2007. IEEE Institute of Electrical and Electronic Engineers , Piscataway, NJ, USA, pp. 1661-1664, IEEE Ultrasonics Symposium, IUS 2007, New York, NY, United States, 28/10/07. https://doi.org/10.1109/ULTSYM.2007.418

Area and dispersion dependence of vibration shape and coupling coefficient in thin film BAW resonators. / Pensala, Tuomas; Ylilammi, Markku; Johanna, Meltaus; Kokkonen, Kimmo.

Proceedings : IEEE Ultrasonics Symposium, IUS 2007. Piscataway, NJ, USA : IEEE Institute of Electrical and Electronic Engineers , 2007. p. 1661-1664.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Area and dispersion dependence of vibration shape and coupling coefficient in thin film BAW resonators

AU - Pensala, Tuomas

AU - Ylilammi, Markku

AU - Johanna, Meltaus

AU - Kokkonen, Kimmo

N1 - Project code: 3266

PY - 2007

Y1 - 2007

N2 - Size dependence of resonator performance is studied in AlN and ZnO resonators with FEM simulation, electrical measurements, and laser interferometry. Eigenmode spectrum compression due to increased size of the resonator leads to smoothening of the electrical response and flattening of the vibrational at-resonance response as several modes can be simultaneously excited near the device resonance frequency. This is seen both in simulations and in measurements.

AB - Size dependence of resonator performance is studied in AlN and ZnO resonators with FEM simulation, electrical measurements, and laser interferometry. Eigenmode spectrum compression due to increased size of the resonator leads to smoothening of the electrical response and flattening of the vibrational at-resonance response as several modes can be simultaneously excited near the device resonance frequency. This is seen both in simulations and in measurements.

KW - thin film

KW - BAW

KW - AlN

KW - ZnO

KW - plate wave dispersion

KW - coupling coefficient

KW - area

U2 - 10.1109/ULTSYM.2007.418

DO - 10.1109/ULTSYM.2007.418

M3 - Conference article in proceedings

SN - 978-1-4244-1383-6

SN - 978-1-4244-1384-3

SP - 1661

EP - 1664

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Piscataway, NJ, USA

ER -

Pensala T, Ylilammi M, Johanna M, Kokkonen K. Area and dispersion dependence of vibration shape and coupling coefficient in thin film BAW resonators. In Proceedings : IEEE Ultrasonics Symposium, IUS 2007. Piscataway, NJ, USA: IEEE Institute of Electrical and Electronic Engineers . 2007. p. 1661-1664 https://doi.org/10.1109/ULTSYM.2007.418