Atomic-layer-deposited Alumina (Al2O3) coating on thin-film cryoresistors

Ossi M. Hahtela, Alexandre F. Satrapinski, Päivi H. Sievilä, Nikolai Chekurov

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al 2 O 3 ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 -6 h -1 for a nonaged uncoated resistor to 0.03 times10 -6 h -1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.
Original languageEnglish
Pages (from-to)1183-1187
JournalIEEE Transactions on Instrumentation and Measurement
Volume58
Issue number4
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

resistors
Resistors
Alumina
aluminum oxides
coatings
Thin films
Coatings
thin films
drift rate
Atomic layer deposition
atomic layer epitaxy
Metals
metals
Electric properties
electrical properties
Oxidation
Temperature
oxidation
room temperature
temperature

Keywords

  • Coatings
  • dielectric films
  • resistance measurement
  • stability
  • thin-film resistors

Cite this

Hahtela, Ossi M. ; Satrapinski, Alexandre F. ; Sievilä, Päivi H. ; Chekurov, Nikolai. / Atomic-layer-deposited Alumina (Al2O3) coating on thin-film cryoresistors. In: IEEE Transactions on Instrumentation and Measurement. 2009 ; Vol. 58, No. 4. pp. 1183-1187.
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abstract = "Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al 2 O 3 ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 -6 h -1 for a nonaged uncoated resistor to 0.03 times10 -6 h -1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.",
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Atomic-layer-deposited Alumina (Al2O3) coating on thin-film cryoresistors. / Hahtela, Ossi M.; Satrapinski, Alexandre F.; Sievilä, Päivi H.; Chekurov, Nikolai.

In: IEEE Transactions on Instrumentation and Measurement, Vol. 58, No. 4, 2009, p. 1183-1187.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Atomic-layer-deposited Alumina (Al2O3) coating on thin-film cryoresistors

AU - Hahtela, Ossi M.

AU - Satrapinski, Alexandre F.

AU - Sievilä, Päivi H.

AU - Chekurov, Nikolai

PY - 2009

Y1 - 2009

N2 - Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al 2 O 3 ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 -6 h -1 for a nonaged uncoated resistor to 0.03 times10 -6 h -1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.

AB - Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al 2 O 3 ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 -6 h -1 for a nonaged uncoated resistor to 0.03 times10 -6 h -1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.

KW - Coatings

KW - dielectric films

KW - resistance measurement

KW - stability

KW - thin-film resistors

U2 - 10.1109/TIM.2008.2006964

DO - 10.1109/TIM.2008.2006964

M3 - Article

VL - 58

SP - 1183

EP - 1187

JO - IEEE Transactions on Instrumentation and Measurement

JF - IEEE Transactions on Instrumentation and Measurement

SN - 0018-9456

IS - 4

ER -