Atomic-layer-deposited Alumina (Al2O3) coating on thin-film cryoresistors

Ossi M. Hahtela, Alexandre F. Satrapinski, Päivi H. Sievilä, Nikolai Chekurov

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al 2 O 3 ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 -6 h -1 for a nonaged uncoated resistor to 0.03 times10 -6 h -1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.
    Original languageEnglish
    Pages (from-to)1183-1187
    JournalIEEE Transactions on Instrumentation and Measurement
    Volume58
    Issue number4
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Coatings
    • dielectric films
    • resistance measurement
    • stability
    • thin-film resistors

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