Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al 2 O 3 ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 -6 h -1 for a nonaged uncoated resistor to 0.03 times10 -6 h -1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.
|Journal||IEEE Transactions on Instrumentation and Measurement|
|Publication status||Published - 2009|
|MoE publication type||A1 Journal article-refereed|
- dielectric films
- resistance measurement
- thin-film resistors
Hahtela, O. M., Satrapinski, A. F., Sievilä, P. H., & Chekurov, N. (2009). Atomic-layer-deposited Alumina (Al2O3) coating on thin-film cryoresistors. IEEE Transactions on Instrumentation and Measurement, 58(4), 1183-1187. https://doi.org/10.1109/TIM.2008.2006964