Atomic-layer-deposited Alumina (Al2O3) coating on thin-film cryoresistors

Ossi M. Hahtela; Alexandre F. Satrapinski; Päivi H. Sievilä; Nikolai Chekurov

doi:10.1109/TIM.2008.2006964

Atomic-layer-deposited Alumina (Al₂O₃) coating on thin-film cryoresistors

Ossi M. Hahtela
, Alexandre F. Satrapinski
, Päivi H. Sievilä
, Nikolai Chekurov

Centre for Metrology and Accreditation Finland (MIKES)
Helsinki University of Technology
Oxford Instruments Analytical Oy

Research output: Contribution to journal › Article › Scientific › peer-review

7 Citations (Scopus)

Abstract

Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al ₂ O ₃ ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 ^-6 h ^-1 for a nonaged uncoated resistor to 0.03 times10 ^-6 h ^-1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.

Original language	English
Pages (from-to)	1183-1187
Journal	IEEE Transactions on Instrumentation and Measurement
Volume	58
Issue number	4
DOIs	https://doi.org/10.1109/TIM.2008.2006964
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

Keywords

Coatings
dielectric films
resistance measurement
stability
thin-film resistors

Access to Document

10.1109/TIM.2008.2006964

Cite this

@article{e332ddd6f04d4030a384637a46238aff,

title = "Atomic-layer-deposited Alumina (Al2O3) coating on thin-film cryoresistors",

abstract = "Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al 2 O 3 ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 -6 h -1 for a nonaged uncoated resistor to 0.03 times10 -6 h -1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.",

keywords = "Coatings, dielectric films, resistance measurement, stability, thin-film resistors",

author = "Hahtela, \{Ossi M.\} and Satrapinski, \{Alexandre F.\} and Sievil{\"a}, \{P{\"a}ivi H.\} and Nikolai Chekurov",

year = "2009",

doi = "10.1109/TIM.2008.2006964",

language = "English",

volume = "58",

pages = "1183--1187",

journal = "IEEE Transactions on Instrumentation and Measurement",

issn = "0018-9456",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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TY - JOUR

T1 - Atomic-layer-deposited Alumina (Al2O3) coating on thin-film cryoresistors

AU - Hahtela, Ossi M.

AU - Satrapinski, Alexandre F.

AU - Sievilä, Päivi H.

AU - Chekurov, Nikolai

PY - 2009

Y1 - 2009

N2 - Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al 2 O 3 ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 -6 h -1 for a nonaged uncoated resistor to 0.03 times10 -6 h -1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.

AB - Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al 2 O 3 ) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10 -6 h -1 for a nonaged uncoated resistor to 0.03 times10 -6 h -1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.

KW - Coatings

KW - dielectric films

KW - resistance measurement

KW - stability

KW - thin-film resistors

U2 - 10.1109/TIM.2008.2006964

DO - 10.1109/TIM.2008.2006964

M3 - Article

SN - 0018-9456

VL - 58

SP - 1183

EP - 1187

JO - IEEE Transactions on Instrumentation and Measurement

JF - IEEE Transactions on Instrumentation and Measurement

IS - 4