Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

J. Härkönen (Corresponding Author), J. Ott, M. Mäkelä, T. Arsenovich, A. Gädda, T. Peltola, E. Tuovinen, P. Luukka, E. Tuominen, A. Junkes, J. Niinistö, M. Ritala

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.
Original languageEnglish
Pages (from-to)2-6
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume831
DOIs
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Titanium nitride
titanium nitrides
Pixels
pixels
Detectors
resistors
Thin films
Resistors
detectors
thin films
insulators
Annealing
annealing
punches
Passivation
passivity
sprayers
Plasmas

Keywords

  • ALD
  • TiN
  • detector
  • bias resistor

Cite this

Härkönen, J. ; Ott, J. ; Mäkelä, M. ; Arsenovich, T. ; Gädda, A. ; Peltola, T. ; Tuovinen, E. ; Luukka, P. ; Tuominen, E. ; Junkes, A. ; Niinistö, J. ; Ritala, M. / Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors. In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2016 ; Vol. 831. pp. 2-6.
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abstract = "In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.",
keywords = "ALD, TiN, detector, bias resistor",
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Härkönen, J, Ott, J, Mäkelä, M, Arsenovich, T, Gädda, A, Peltola, T, Tuovinen, E, Luukka, P, Tuominen, E, Junkes, A, Niinistö, J & Ritala, M 2016, 'Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 831, pp. 2-6. https://doi.org/10.1016/j.nima.2016.03.037

Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors. / Härkönen, J. (Corresponding Author); Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 831, 2016, p. 2-6.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

AU - Härkönen, J.

AU - Ott, J.

AU - Mäkelä, M.

AU - Arsenovich, T.

AU - Gädda, A.

AU - Peltola, T.

AU - Tuovinen, E.

AU - Luukka, P.

AU - Tuominen, E.

AU - Junkes, A.

AU - Niinistö, J.

AU - Ritala, M.

PY - 2016

Y1 - 2016

N2 - In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

AB - In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

KW - ALD

KW - TiN

KW - detector

KW - bias resistor

U2 - 10.1016/j.nima.2016.03.037

DO - 10.1016/j.nima.2016.03.037

M3 - Article

VL - 831

SP - 2

EP - 6

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

ER -