Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

J. Härkönen (Corresponding Author), J. Ott, M. Mäkelä, T. Arsenovich, A. Gädda, T. Peltola, E. Tuovinen, P. Luukka, E. Tuominen, A. Junkes, J. Niinistö, M. Ritala

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.
    Original languageEnglish
    Pages (from-to)2-6
    JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
    Volume831
    DOIs
    Publication statusPublished - 2016
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Atomic layer deposition
    atomic layer epitaxy
    Titanium nitride
    titanium nitrides
    Pixels
    pixels
    Detectors
    resistors
    Thin films
    Resistors
    detectors
    thin films
    insulators
    Annealing
    annealing
    punches
    Passivation
    passivity
    sprayers
    Plasmas

    Keywords

    • ALD
    • TiN
    • detector
    • bias resistor

    Cite this

    Härkönen, J. ; Ott, J. ; Mäkelä, M. ; Arsenovich, T. ; Gädda, A. ; Peltola, T. ; Tuovinen, E. ; Luukka, P. ; Tuominen, E. ; Junkes, A. ; Niinistö, J. ; Ritala, M. / Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors. In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2016 ; Vol. 831. pp. 2-6.
    @article{5d6fca0ee335494aad9e5c1d413804da,
    title = "Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors",
    abstract = "In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.",
    keywords = "ALD, TiN, detector, bias resistor",
    author = "J. H{\"a}rk{\"o}nen and J. Ott and M. M{\"a}kel{\"a} and T. Arsenovich and A. G{\"a}dda and T. Peltola and E. Tuovinen and P. Luukka and E. Tuominen and A. Junkes and J. Niinist{\"o} and M. Ritala",
    year = "2016",
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    language = "English",
    volume = "831",
    pages = "2--6",
    journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
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    Härkönen, J, Ott, J, Mäkelä, M, Arsenovich, T, Gädda, A, Peltola, T, Tuovinen, E, Luukka, P, Tuominen, E, Junkes, A, Niinistö, J & Ritala, M 2016, 'Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 831, pp. 2-6. https://doi.org/10.1016/j.nima.2016.03.037

    Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors. / Härkönen, J. (Corresponding Author); Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 831, 2016, p. 2-6.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    AU - Härkönen, J.

    AU - Ott, J.

    AU - Mäkelä, M.

    AU - Arsenovich, T.

    AU - Gädda, A.

    AU - Peltola, T.

    AU - Tuovinen, E.

    AU - Luukka, P.

    AU - Tuominen, E.

    AU - Junkes, A.

    AU - Niinistö, J.

    AU - Ritala, M.

    PY - 2016

    Y1 - 2016

    N2 - In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

    AB - In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

    KW - ALD

    KW - TiN

    KW - detector

    KW - bias resistor

    U2 - 10.1016/j.nima.2016.03.037

    DO - 10.1016/j.nima.2016.03.037

    M3 - Article

    VL - 831

    SP - 2

    EP - 6

    JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

    JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

    SN - 0168-9002

    ER -