Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

J. Härkönen; J. Ott; M. Mäkelä; T. Arsenovich; A. Gädda; T. Peltola; Esa Tuovinen; P. Luukka; E. Tuominen; A. Junkes; J. Niinistö; M. Ritala

doi:10.1016/j.nima.2016.03.037

Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

J. Härkönen (Corresponding Author), J. Ott, M. Mäkelä, T. Arsenovich, A. Gädda, T. Peltola, Esa Tuovinen, P. Luukka, E. Tuominen, A. Junkes, J. Niinistö, M. Ritala

Research output: Contribution to journal › Article › Scientific › peer-review

10 Citations (Scopus)

Abstract

In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

Original language	English
Pages (from-to)	2-6
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	831
DOIs	https://doi.org/10.1016/j.nima.2016.03.037
Publication status	Published - 2016
MoE publication type	A1 Journal article-refereed

Keywords

ALD
TiN
detector
bias resistor

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10.1016/j.nima.2016.03.037

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Härkönen, J., Ott, J., Mäkelä, M., Arsenovich, T., Gädda, A., Peltola, T., Tuovinen, E., Luukka, P., Tuominen, E., Junkes, A., Niinistö, J., & Ritala, M. (2016). Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 831, 2-6. https://doi.org/10.1016/j.nima.2016.03.037

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title = "Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors",

abstract = "In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.",

keywords = "ALD, TiN, detector, bias resistor",

author = "J. H{\"a}rk{\"o}nen and J. Ott and M. M{\"a}kel{\"a} and T. Arsenovich and A. G{\"a}dda and T. Peltola and Esa Tuovinen and P. Luukka and E. Tuominen and A. Junkes and J. Niinist{\"o} and M. Ritala",

year = "2016",

doi = "10.1016/j.nima.2016.03.037",

language = "English",

volume = "831",

pages = "2--6",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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Härkönen, J, Ott, J, Mäkelä, M, Arsenovich, T, Gädda, A, Peltola, T, Tuovinen, E, Luukka, P, Tuominen, E, Junkes, A, Niinistö, J & Ritala, M 2016, 'Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 831, pp. 2-6. https://doi.org/10.1016/j.nima.2016.03.037

Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors. / Härkönen, J. (Corresponding Author); Ott, J.; Mäkelä, M. et al.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 831, 2016, p. 2-6.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

AU - Härkönen, J.

AU - Ott, J.

AU - Mäkelä, M.

AU - Arsenovich, T.

AU - Gädda, A.

AU - Peltola, T.

AU - Tuovinen, Esa

AU - Luukka, P.

AU - Tuominen, E.

AU - Junkes, A.

AU - Niinistö, J.

AU - Ritala, M.

PY - 2016

Y1 - 2016

N2 - In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

AB - In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

KW - ALD

KW - TiN

KW - detector

KW - bias resistor

U2 - 10.1016/j.nima.2016.03.037

DO - 10.1016/j.nima.2016.03.037

M3 - Article

SN - 0168-9002

VL - 831

SP - 2

EP - 6

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

Abstract

Keywords

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