Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica–alumina, and silica supports

R.J. Silvennoinen (Corresponding Author), O.J.T. Jylhä, M. Lindblad, J.T. Sainio, Riikka Puurunen, Outi Krause

Research output: Contribution to journalArticleScientificpeer-review

27 Citations (Scopus)

Abstract

The deposition of noble metal particles and films by atomic layer deposition (ALD) has recently gained interest in the fields of catalysis and microelectronics. However, there is little information on the mechanisms governing the reactions of noble metals with high surface area supports. In this work, iridium(III) acetylacetonate was deposited from gas phase onto alumina, silica–alumina, and silica supports to gain insight into the reaction mechanisms. According to elemental analysis and infrared spectroscopy, ligand exchange reaction between iridium acetylacetonate and surface OH groups took place on all substrate surfaces, but the iridium deposition on alumina and silica–alumina appeared to be hindered by sterical effects of the acetylacetonate ligands. Part of the iridium on silica was in metallic form. To reduce the content of iridium, reactive sites of the support surfaces were blocked with H-acetylacetonate (2,4-pentanedione). The blocking reduced the iridium content by more than 90% on alumina but by only 30–50% on silica–alumina. The attempted blocking had almost no effect on silica as expected. According to the results of this work, ALD can provide a feasible method for preparing iridium catalyst with reasonable iridium loadings.
Original languageEnglish
Pages (from-to)4103-4111
JournalApplied Surface Science
Volume253
Issue number9
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Fingerprint

Iridium
Atomic layer deposition
Aluminum Oxide
Silicon Dioxide
Alumina
Silica
Precious metals
Ligands
acetyl acetonate
Microelectronics
Catalysis
Infrared spectroscopy
Gases
Catalysts
Substrates

Keywords

  • Atomic layer deposition (ALD)
  • Iridium
  • Alumina
  • Silica
  • Silica–alumina

Cite this

Silvennoinen, R. J., Jylhä, O. J. T., Lindblad, M., Sainio, J. T., Puurunen, R., & Krause, O. (2007). Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica–alumina, and silica supports. Applied Surface Science, 253(9), 4103-4111. https://doi.org/10.1016/j.apsusc.2006.09.010
Silvennoinen, R.J. ; Jylhä, O.J.T. ; Lindblad, M. ; Sainio, J.T. ; Puurunen, Riikka ; Krause, Outi. / Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica–alumina, and silica supports. In: Applied Surface Science. 2007 ; Vol. 253, No. 9. pp. 4103-4111.
@article{57798cfe15ad42908c1a995856ee40fa,
title = "Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica–alumina, and silica supports",
abstract = "The deposition of noble metal particles and films by atomic layer deposition (ALD) has recently gained interest in the fields of catalysis and microelectronics. However, there is little information on the mechanisms governing the reactions of noble metals with high surface area supports. In this work, iridium(III) acetylacetonate was deposited from gas phase onto alumina, silica–alumina, and silica supports to gain insight into the reaction mechanisms. According to elemental analysis and infrared spectroscopy, ligand exchange reaction between iridium acetylacetonate and surface OH groups took place on all substrate surfaces, but the iridium deposition on alumina and silica–alumina appeared to be hindered by sterical effects of the acetylacetonate ligands. Part of the iridium on silica was in metallic form. To reduce the content of iridium, reactive sites of the support surfaces were blocked with H-acetylacetonate (2,4-pentanedione). The blocking reduced the iridium content by more than 90{\%} on alumina but by only 30–50{\%} on silica–alumina. The attempted blocking had almost no effect on silica as expected. According to the results of this work, ALD can provide a feasible method for preparing iridium catalyst with reasonable iridium loadings.",
keywords = "Atomic layer deposition (ALD), Iridium, Alumina, Silica, Silica–alumina",
author = "R.J. Silvennoinen and O.J.T. Jylh{\"a} and M. Lindblad and J.T. Sainio and Riikka Puurunen and Outi Krause",
year = "2007",
doi = "10.1016/j.apsusc.2006.09.010",
language = "English",
volume = "253",
pages = "4103--4111",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "9",

}

Silvennoinen, RJ, Jylhä, OJT, Lindblad, M, Sainio, JT, Puurunen, R & Krause, O 2007, 'Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica–alumina, and silica supports', Applied Surface Science, vol. 253, no. 9, pp. 4103-4111. https://doi.org/10.1016/j.apsusc.2006.09.010

Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica–alumina, and silica supports. / Silvennoinen, R.J. (Corresponding Author); Jylhä, O.J.T.; Lindblad, M.; Sainio, J.T.; Puurunen, Riikka; Krause, Outi.

In: Applied Surface Science, Vol. 253, No. 9, 2007, p. 4103-4111.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica–alumina, and silica supports

AU - Silvennoinen, R.J.

AU - Jylhä, O.J.T.

AU - Lindblad, M.

AU - Sainio, J.T.

AU - Puurunen, Riikka

AU - Krause, Outi

PY - 2007

Y1 - 2007

N2 - The deposition of noble metal particles and films by atomic layer deposition (ALD) has recently gained interest in the fields of catalysis and microelectronics. However, there is little information on the mechanisms governing the reactions of noble metals with high surface area supports. In this work, iridium(III) acetylacetonate was deposited from gas phase onto alumina, silica–alumina, and silica supports to gain insight into the reaction mechanisms. According to elemental analysis and infrared spectroscopy, ligand exchange reaction between iridium acetylacetonate and surface OH groups took place on all substrate surfaces, but the iridium deposition on alumina and silica–alumina appeared to be hindered by sterical effects of the acetylacetonate ligands. Part of the iridium on silica was in metallic form. To reduce the content of iridium, reactive sites of the support surfaces were blocked with H-acetylacetonate (2,4-pentanedione). The blocking reduced the iridium content by more than 90% on alumina but by only 30–50% on silica–alumina. The attempted blocking had almost no effect on silica as expected. According to the results of this work, ALD can provide a feasible method for preparing iridium catalyst with reasonable iridium loadings.

AB - The deposition of noble metal particles and films by atomic layer deposition (ALD) has recently gained interest in the fields of catalysis and microelectronics. However, there is little information on the mechanisms governing the reactions of noble metals with high surface area supports. In this work, iridium(III) acetylacetonate was deposited from gas phase onto alumina, silica–alumina, and silica supports to gain insight into the reaction mechanisms. According to elemental analysis and infrared spectroscopy, ligand exchange reaction between iridium acetylacetonate and surface OH groups took place on all substrate surfaces, but the iridium deposition on alumina and silica–alumina appeared to be hindered by sterical effects of the acetylacetonate ligands. Part of the iridium on silica was in metallic form. To reduce the content of iridium, reactive sites of the support surfaces were blocked with H-acetylacetonate (2,4-pentanedione). The blocking reduced the iridium content by more than 90% on alumina but by only 30–50% on silica–alumina. The attempted blocking had almost no effect on silica as expected. According to the results of this work, ALD can provide a feasible method for preparing iridium catalyst with reasonable iridium loadings.

KW - Atomic layer deposition (ALD)

KW - Iridium

KW - Alumina

KW - Silica

KW - Silica–alumina

U2 - 10.1016/j.apsusc.2006.09.010

DO - 10.1016/j.apsusc.2006.09.010

M3 - Article

VL - 253

SP - 4103

EP - 4111

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 9

ER -