Atomic Layer Deposition of Molybdenum Carbide Thin Films

Paloma Ruiz Kärkkäinen; Georgi Popov; Timo Hatanpää; Antti Kemppinen; Katja Kohopää; Mohammad Bagheri; Hannu Pekka Komsa; Mikko Heikkilä; Kenichiro Mizohata; Mykhailo Chundak; Petro Deminskyi; Anton Vihervaara; Mário Ribeiro; Joel Hätinen; Joonas Govenius; Matti Putkonen; Mikko Ritala

doi:10.1002/admi.202400270

Atomic Layer Deposition of Molybdenum Carbide Thin Films

Paloma Ruiz Kärkkäinen^*, Georgi Popov, Timo Hatanpää, Antti Kemppinen, Katja Kohopää, Mohammad Bagheri, Hannu Pekka Komsa, Mikko Heikkilä, Kenichiro Mizohata, Mykhailo Chundak, Petro Deminskyi, Anton Vihervaara, Mário Ribeiro, Joel Hätinen, Joonas Govenius, Matti Putkonen, Mikko Ritala^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

The development of deposition processes for metal carbide thin films is rapidly advancing, driven by their potential for applications including catalysis, batteries, and semiconductor devices. Within this landscape, atomic layer deposition (ALD) offers exceptional conformality, uniformity, and thickness control on spatially complex structures. This paper presents a comprehensive study on the thermal ALD of MoCx with MoCl5 and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP] as precursors, focusing on the functional properties and characterization of the films. The depositions are conducted at 200–300 °C and very smooth films with RMS Rq ≈0.3–0.6 nm on Si, TiN, and HfO2 substrates are obtained. The process has a high growth rate of 1.5 Å cycle−1 and the films appear to be continuous already after 5 cycles. The films are conductive even at thicknesses below 5 nm, and films above 18 nm exhibit superconductivity up to 4.4 K. In lieu of suitable references, Raman modes for molybdenum carbides and nitrides are calculated and X-ray diffraction and X-ray photoelectron spectroscopy are used for phase analysis.

Original language	English
Article number	2400270
Journal	Advanced Materials Interfaces
Volume	11
Issue number	26
DOIs	https://doi.org/10.1002/admi.202400270
Publication status	Published - 12 Sept 2024
MoE publication type	A1 Journal article-refereed

Funding

ASM Microchemistry Oy and the Doctoral Program in Materials Research and Nanoscience (MATRENA) are acknowledged for funding this research. This work was carried out by utilizing ALD center Finland research infrastructure. G.P. acknowledges funding from Research Council of Finland (decision number 330086). H.\u2010P.K. and M.B. thank CSC\u2013IT Center for Science Ltd. for generous grants of computer time. V.T.T. acknowledges the European Union's Horizon 2020 Research and Innovation Program under the Grant Agreement No. 862660/Quantum e\u2010leaps, and Research Council of Finland through Grant No. 350220. This work was performed as part of the Research Council of Finland Centre of Excellence program (projects 35293 and 352935).

Keywords

atomic layer deposition
molybdenum carbide
superconductors
thin film

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10.1002/admi.202400270Licence: CC BY

Cite this

Kärkkäinen, P. R., Popov, G., Hatanpää, T., Kemppinen, A., Kohopää, K., Bagheri, M., Komsa, H. P., Heikkilä, M., Mizohata, K., Chundak, M., Deminskyi, P., Vihervaara, A., Ribeiro, M., Hätinen, J., Govenius, J., Putkonen, M., & Ritala, M. (2024). Atomic Layer Deposition of Molybdenum Carbide Thin Films. Advanced Materials Interfaces, 11(26), Article 2400270. https://doi.org/10.1002/admi.202400270

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title = "Atomic Layer Deposition of Molybdenum Carbide Thin Films",

abstract = "The development of deposition processes for metal carbide thin films is rapidly advancing, driven by their potential for applications including catalysis, batteries, and semiconductor devices. Within this landscape, atomic layer deposition (ALD) offers exceptional conformality, uniformity, and thickness control on spatially complex structures. This paper presents a comprehensive study on the thermal ALD of MoCx with MoCl5 and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP] as precursors, focusing on the functional properties and characterization of the films. The depositions are conducted at 200–300 °C and very smooth films with RMS Rq ≈0.3–0.6 nm on Si, TiN, and HfO2 substrates are obtained. The process has a high growth rate of 1.5 {\AA} cycle−1 and the films appear to be continuous already after 5 cycles. The films are conductive even at thicknesses below 5 nm, and films above 18 nm exhibit superconductivity up to 4.4 K. In lieu of suitable references, Raman modes for molybdenum carbides and nitrides are calculated and X-ray diffraction and X-ray photoelectron spectroscopy are used for phase analysis.",

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author = "K{\"a}rkk{\"a}inen, \{Paloma Ruiz\} and Georgi Popov and Timo Hatanp{\"a}{\"a} and Antti Kemppinen and Katja Kohop{\"a}{\"a} and Mohammad Bagheri and Komsa, \{Hannu Pekka\} and Mikko Heikkil{\"a} and Kenichiro Mizohata and Mykhailo Chundak and Petro Deminskyi and Anton Vihervaara and M{\'a}rio Ribeiro and Joel H{\"a}tinen and Joonas Govenius and Matti Putkonen and Mikko Ritala",

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Kärkkäinen, PR, Popov, G, Hatanpää, T, Kemppinen, A , Kohopää, K, Bagheri, M, Komsa, HP, Heikkilä, M, Mizohata, K, Chundak, M, Deminskyi, P, Vihervaara, A, Ribeiro, M , Hätinen, J, Govenius, J, Putkonen, M & Ritala, M 2024, 'Atomic Layer Deposition of Molybdenum Carbide Thin Films', Advanced Materials Interfaces, vol. 11, no. 26, 2400270. https://doi.org/10.1002/admi.202400270

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AU - Kärkkäinen, Paloma Ruiz

AU - Popov, Georgi

AU - Hatanpää, Timo

AU - Kemppinen, Antti

AU - Kohopää, Katja

AU - Bagheri, Mohammad

AU - Komsa, Hannu Pekka

AU - Heikkilä, Mikko

AU - Mizohata, Kenichiro

AU - Chundak, Mykhailo

AU - Deminskyi, Petro

AU - Vihervaara, Anton

AU - Ribeiro, Mário

AU - Hätinen, Joel

AU - Govenius, Joonas

AU - Putkonen, Matti

AU - Ritala, Mikko

PY - 2024/9/12

Y1 - 2024/9/12

N2 - The development of deposition processes for metal carbide thin films is rapidly advancing, driven by their potential for applications including catalysis, batteries, and semiconductor devices. Within this landscape, atomic layer deposition (ALD) offers exceptional conformality, uniformity, and thickness control on spatially complex structures. This paper presents a comprehensive study on the thermal ALD of MoCx with MoCl5 and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP] as precursors, focusing on the functional properties and characterization of the films. The depositions are conducted at 200–300 °C and very smooth films with RMS Rq ≈0.3–0.6 nm on Si, TiN, and HfO2 substrates are obtained. The process has a high growth rate of 1.5 Å cycle−1 and the films appear to be continuous already after 5 cycles. The films are conductive even at thicknesses below 5 nm, and films above 18 nm exhibit superconductivity up to 4.4 K. In lieu of suitable references, Raman modes for molybdenum carbides and nitrides are calculated and X-ray diffraction and X-ray photoelectron spectroscopy are used for phase analysis.

AB - The development of deposition processes for metal carbide thin films is rapidly advancing, driven by their potential for applications including catalysis, batteries, and semiconductor devices. Within this landscape, atomic layer deposition (ALD) offers exceptional conformality, uniformity, and thickness control on spatially complex structures. This paper presents a comprehensive study on the thermal ALD of MoCx with MoCl5 and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP] as precursors, focusing on the functional properties and characterization of the films. The depositions are conducted at 200–300 °C and very smooth films with RMS Rq ≈0.3–0.6 nm on Si, TiN, and HfO2 substrates are obtained. The process has a high growth rate of 1.5 Å cycle−1 and the films appear to be continuous already after 5 cycles. The films are conductive even at thicknesses below 5 nm, and films above 18 nm exhibit superconductivity up to 4.4 K. In lieu of suitable references, Raman modes for molybdenum carbides and nitrides are calculated and X-ray diffraction and X-ray photoelectron spectroscopy are used for phase analysis.

KW - atomic layer deposition

KW - molybdenum carbide

KW - superconductors

KW - thin film

UR - https://www.scopus.com/pages/publications/85197434626

U2 - 10.1002/admi.202400270

DO - 10.1002/admi.202400270

M3 - Article

AN - SCOPUS:85197434626

SN - 2196-7350

VL - 11

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 26

M1 - 2400270

ER -

Atomic Layer Deposition of Molybdenum Carbide Thin Films

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Atomic Layer Deposition of Molybdenum Carbide Thin Films

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QuantLearn: Diverse computing ecosystem for quantum machine learning via optical links

QUANTUM E-LEAPS: Toward new era of quantum electrical measurements through phase slips

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