TY - JOUR
T1 - Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensors
AU - Niskanen, Antti J.
AU - Varpula, Aapo
AU - Utriainen, Mikko
AU - Natarajan, Gomathi
AU - Cameron, David C.
AU - Novikov, Sergey
AU - Airaksinen, Veli Matti
AU - Sinkkonen, Juha
AU - Franssila, Sami
PY - 2010/6/30
Y1 - 2010/6/30
N2 - We report the use of atomic layer deposition (ALD) to produce the gas-sensitive tin dioxide film in a microhotplate gas sensor. The performance of the device was demonstrated using ethanol, acetone and acrylonitrile as model analytes. Fast response times and low drift rates of the output signal were measured, indicating a structurally stable tin dioxide film and reflecting the capabilities of ALD in gas sensor applications. Fabrication of the microhotplate using tungsten metallization and plasma deposited silicon dioxide dielectrics is also detailed.
AB - We report the use of atomic layer deposition (ALD) to produce the gas-sensitive tin dioxide film in a microhotplate gas sensor. The performance of the device was demonstrated using ethanol, acetone and acrylonitrile as model analytes. Fast response times and low drift rates of the output signal were measured, indicating a structurally stable tin dioxide film and reflecting the capabilities of ALD in gas sensor applications. Fabrication of the microhotplate using tungsten metallization and plasma deposited silicon dioxide dielectrics is also detailed.
KW - Atomic layer deposition
KW - Metal-oxide gas sensor
KW - Microhotplate gas sensor
KW - Tin dioxide
UR - http://www.scopus.com/inward/record.url?scp=77954089617&partnerID=8YFLogxK
U2 - 10.1016/j.snb.2010.05.018
DO - 10.1016/j.snb.2010.05.018
M3 - Article
AN - SCOPUS:77954089617
VL - 148
SP - 227
EP - 232
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
SN - 0925-4005
IS - 1
ER -