Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensors

Antti J. Niskanen (Corresponding Author), Aapo Varpula, Mikko Utriainen, Gomathi Natarajan, David C. Cameron, Sergey Novikov, Veli Matti Airaksinen, Juha Sinkkonen, Sami Franssila

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20 Citations (Scopus)


We report the use of atomic layer deposition (ALD) to produce the gas-sensitive tin dioxide film in a microhotplate gas sensor. The performance of the device was demonstrated using ethanol, acetone and acrylonitrile as model analytes. Fast response times and low drift rates of the output signal were measured, indicating a structurally stable tin dioxide film and reflecting the capabilities of ALD in gas sensor applications. Fabrication of the microhotplate using tungsten metallization and plasma deposited silicon dioxide dielectrics is also detailed.

Original languageEnglish
Pages (from-to)227-232
JournalSensors and Actuators, B: Chemical
Issue number1
Publication statusPublished - 30 Jun 2010
MoE publication typeA1 Journal article-refereed



  • Atomic layer deposition
  • Metal-oxide gas sensor
  • Microhotplate gas sensor
  • Tin dioxide

Cite this

Niskanen, A. J., Varpula, A., Utriainen, M., Natarajan, G., Cameron, D. C., Novikov, S., Airaksinen, V. M., Sinkkonen, J., & Franssila, S. (2010). Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensors. Sensors and Actuators, B: Chemical, 148(1), 227-232.