Atomic layer deposition of titanium nitride layer on porous silicon supercapacitor electrodes

Kestutis Grigoras, J. Keskinen, Elina Yli-Rantala, S. Laakso, H. Välimäki, P. Kauranen, Jouni Ahopelto, Mika Prunnila

Research output: Contribution to conferenceConference PosterScientificpeer-review

Abstract

Atomic layer deposition of thin TiN layer inside the porous silicon electrodes improves conductivity and passivates surface of porous silicon. This improves performance of porous silicon based supercapacitors.
Original languageEnglish
Publication statusPublished - 2014
Event14th International Conference on Atomic Layer Deposition, ALD 2014 - Kyoto, Japan
Duration: 15 Jun 201418 Jun 2014
Conference number: 14

Conference

Conference14th International Conference on Atomic Layer Deposition, ALD 2014
Abbreviated titleALD 2014
CountryJapan
CityKyoto
Period15/06/1418/06/14

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Keywords

  • porous silicon
  • ALD
  • supercapacitor

Cite this

Grigoras, K., Keskinen, J., Yli-Rantala, E., Laakso, S., Välimäki, H., Kauranen, P., Ahopelto, J., & Prunnila, M. (2014). Atomic layer deposition of titanium nitride layer on porous silicon supercapacitor electrodes. Poster session presented at 14th International Conference on Atomic Layer Deposition, ALD 2014, Kyoto, Japan.