Atomic layer deposition of titanium nitride layer on porous silicon supercapacitor electrodes

Kestutis Grigoras, J. Keskinen, Elina Yli-Rantala, S. Laakso, H. Välimäki, P. Kauranen, Jouni Ahopelto, Mika Prunnila

    Research output: Contribution to conferenceConference PosterScientificpeer-review

    Abstract

    Atomic layer deposition of thin TiN layer inside the porous silicon electrodes improves conductivity and passivates surface of porous silicon. This improves performance of porous silicon based supercapacitors.
    Original languageEnglish
    Publication statusPublished - 2014
    Event14th International Conference on Atomic Layer Deposition, ALD 2014 - Kyoto, Japan
    Duration: 15 Jun 201418 Jun 2014
    Conference number: 14

    Conference

    Conference14th International Conference on Atomic Layer Deposition, ALD 2014
    Abbreviated titleALD 2014
    CountryJapan
    CityKyoto
    Period15/06/1418/06/14

    Keywords

    • porous silicon
    • ALD
    • supercapacitor

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