Atomic layer deposition of titanium nitride layer on porous silicon supercapacitor electrodes

Kestutis Grigoras; J. Keskinen; Elina Yli-Rantala; S. Laakso; H. Välimäki; P. Kauranen; Jouni Ahopelto; Mika Prunnila

Atomic layer deposition of titanium nitride layer on porous silicon supercapacitor electrodes

Kestutis Grigoras
, J. Keskinen
, Elina Yli-Rantala
, S. Laakso
, H. Välimäki
, P. Kauranen
, Jouni Ahopelto
, Mika Prunnila

Tampere University of Technology (TUT)

Research output: Contribution to conference › Conference Poster › Scientific › peer-review

Abstract

Atomic layer deposition of thin TiN layer inside the porous silicon electrodes improves conductivity and passivates surface of porous silicon. This improves performance of porous silicon based supercapacitors.

Original language	English
Publication status	Published - 2014
Event	14th International Conference on Atomic Layer Deposition, ALD 2014 - Kyoto, Japan Duration: 15 Jun 2014 → 18 Jun 2014 Conference number: 14

Conference

Conference	14th International Conference on Atomic Layer Deposition, ALD 2014
Abbreviated title	ALD 2014
Country/Territory	Japan
City	Kyoto
Period	15/06/14 → 18/06/14

Keywords

porous silicon
ALD
supercapacitor

Cite this

@conference{5e22bda738534fbca8b663ed6c7940a8,

title = "Atomic layer deposition of titanium nitride layer on porous silicon supercapacitor electrodes",

abstract = "Atomic layer deposition of thin TiN layer inside the porous silicon electrodes improves conductivity and passivates surface of porous silicon. This improves performance of porous silicon based supercapacitors.",

keywords = "porous silicon, ALD, supercapacitor",

author = "Kestutis Grigoras and J. Keskinen and Elina Yli-Rantala and S. Laakso and H. V{\"a}lim{\"a}ki and P. Kauranen and Jouni Ahopelto and Mika Prunnila",

note = "Project code: 73742; 14th International Conference on Atomic Layer Deposition, ALD 2014, ALD 2014 ; Conference date: 15-06-2014 Through 18-06-2014",

year = "2014",

language = "English",

}

TY - CONF

T1 - Atomic layer deposition of titanium nitride layer on porous silicon supercapacitor electrodes

AU - Grigoras, Kestutis

AU - Keskinen, J.

AU - Yli-Rantala, Elina

AU - Laakso, S.

AU - Välimäki, H.

AU - Kauranen, P.

AU - Ahopelto, Jouni

AU - Prunnila, Mika

N1 - Conference code: 14

PY - 2014

Y1 - 2014

N2 - Atomic layer deposition of thin TiN layer inside the porous silicon electrodes improves conductivity and passivates surface of porous silicon. This improves performance of porous silicon based supercapacitors.

AB - Atomic layer deposition of thin TiN layer inside the porous silicon electrodes improves conductivity and passivates surface of porous silicon. This improves performance of porous silicon based supercapacitors.

KW - porous silicon

KW - ALD

KW - supercapacitor

M3 - Conference Poster

T2 - 14th International Conference on Atomic Layer Deposition, ALD 2014

Y2 - 15 June 2014 through 18 June 2014

ER -

Atomic layer deposition of titanium nitride layer on porous silicon supercapacitor electrodes

Abstract

Conference

Keywords

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Cite this