Atomic layer epitaxy growth of LaGaO3 thin films

Minna Nieminen, Sari Lehto, Lauri Niinistö

Research output: Contribution to journalArticleScientificpeer-review

40 Citations (Scopus)

Abstract

Lanthanum gallate thin films were deposited by atomic layer epitaxy (ALE) at 325–425 °C from β-diketonate-type precursors, La(thd)3 and Ga(acac)3, and ozone. Films were grown on soda lime glass, Si(100), MgO-buffered Si(100), sapphire, MgO(100), SrTiO3(100) and LaAlO3(100) substrates. Good control of film stoichiometry was obtained by adjusting the La(thd)3/O3 to Ga(acac)3/O3 pulsing ratio. Stoichiometric LaGaO3 films contained only 0.4 at.% carbon and less than 0.2 at.% hydrogen as impurities. Films were transparent and uniform and their thickness could be accurately controlled by the number of deposition cycles. The as-deposited films were amorphous and became crystalline upon annealing. The annealed films grown on sapphire and MgO(100) substrates were polycrystalline LaGaO3 whereas a La4Ga2O9 phase was formed when the films grown on Si(100) and MgO-buffered Si(100) were annealed. Epitaxial and smooth LaGaO3 thin films were obtained on LaAlO3(100) after annealing at 850 °C, verified by measurements of the X-ray rocking curve of the (200) reflection and the AFM surface roughness.
Original languageEnglish
Pages (from-to)3148-3153
Number of pages6
JournalJournal of Materials Chemistry
Issue number12
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

Fingerprint

Atomic layer epitaxy
Thin films
Aluminum Oxide
Sapphire
Annealing
Lanthanum
Ozone
Amorphous films
Substrates
Lime
Stoichiometry
Hydrogen
Carbon
Surface roughness
Impurities
Crystalline materials
X rays
Glass

Cite this

Nieminen, Minna ; Lehto, Sari ; Niinistö, Lauri. / Atomic layer epitaxy growth of LaGaO3 thin films. In: Journal of Materials Chemistry. 2001 ; No. 12. pp. 3148-3153.
@article{c3b8d4f7d46e4f5f9881d5252a67f85b,
title = "Atomic layer epitaxy growth of LaGaO3 thin films",
abstract = "Lanthanum gallate thin films were deposited by atomic layer epitaxy (ALE) at 325–425 °C from β-diketonate-type precursors, La(thd)3 and Ga(acac)3, and ozone. Films were grown on soda lime glass, Si(100), MgO-buffered Si(100), sapphire, MgO(100), SrTiO3(100) and LaAlO3(100) substrates. Good control of film stoichiometry was obtained by adjusting the La(thd)3/O3 to Ga(acac)3/O3 pulsing ratio. Stoichiometric LaGaO3 films contained only 0.4 at.{\%} carbon and less than 0.2 at.{\%} hydrogen as impurities. Films were transparent and uniform and their thickness could be accurately controlled by the number of deposition cycles. The as-deposited films were amorphous and became crystalline upon annealing. The annealed films grown on sapphire and MgO(100) substrates were polycrystalline LaGaO3 whereas a La4Ga2O9 phase was formed when the films grown on Si(100) and MgO-buffered Si(100) were annealed. Epitaxial and smooth LaGaO3 thin films were obtained on LaAlO3(100) after annealing at 850 °C, verified by measurements of the X-ray rocking curve of the (200) reflection and the AFM surface roughness.",
author = "Minna Nieminen and Sari Lehto and Lauri Niinist{\"o}",
year = "2001",
doi = "10.1039/B105978P",
language = "English",
pages = "3148--3153",
journal = "Journal of Materials Chemistry",
issn = "0959-9428",
publisher = "Royal Society of Chemistry RSC",
number = "12",

}

Atomic layer epitaxy growth of LaGaO3 thin films. / Nieminen, Minna; Lehto, Sari; Niinistö, Lauri.

In: Journal of Materials Chemistry, No. 12, 2001, p. 3148-3153.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Atomic layer epitaxy growth of LaGaO3 thin films

AU - Nieminen, Minna

AU - Lehto, Sari

AU - Niinistö, Lauri

PY - 2001

Y1 - 2001

N2 - Lanthanum gallate thin films were deposited by atomic layer epitaxy (ALE) at 325–425 °C from β-diketonate-type precursors, La(thd)3 and Ga(acac)3, and ozone. Films were grown on soda lime glass, Si(100), MgO-buffered Si(100), sapphire, MgO(100), SrTiO3(100) and LaAlO3(100) substrates. Good control of film stoichiometry was obtained by adjusting the La(thd)3/O3 to Ga(acac)3/O3 pulsing ratio. Stoichiometric LaGaO3 films contained only 0.4 at.% carbon and less than 0.2 at.% hydrogen as impurities. Films were transparent and uniform and their thickness could be accurately controlled by the number of deposition cycles. The as-deposited films were amorphous and became crystalline upon annealing. The annealed films grown on sapphire and MgO(100) substrates were polycrystalline LaGaO3 whereas a La4Ga2O9 phase was formed when the films grown on Si(100) and MgO-buffered Si(100) were annealed. Epitaxial and smooth LaGaO3 thin films were obtained on LaAlO3(100) after annealing at 850 °C, verified by measurements of the X-ray rocking curve of the (200) reflection and the AFM surface roughness.

AB - Lanthanum gallate thin films were deposited by atomic layer epitaxy (ALE) at 325–425 °C from β-diketonate-type precursors, La(thd)3 and Ga(acac)3, and ozone. Films were grown on soda lime glass, Si(100), MgO-buffered Si(100), sapphire, MgO(100), SrTiO3(100) and LaAlO3(100) substrates. Good control of film stoichiometry was obtained by adjusting the La(thd)3/O3 to Ga(acac)3/O3 pulsing ratio. Stoichiometric LaGaO3 films contained only 0.4 at.% carbon and less than 0.2 at.% hydrogen as impurities. Films were transparent and uniform and their thickness could be accurately controlled by the number of deposition cycles. The as-deposited films were amorphous and became crystalline upon annealing. The annealed films grown on sapphire and MgO(100) substrates were polycrystalline LaGaO3 whereas a La4Ga2O9 phase was formed when the films grown on Si(100) and MgO-buffered Si(100) were annealed. Epitaxial and smooth LaGaO3 thin films were obtained on LaAlO3(100) after annealing at 850 °C, verified by measurements of the X-ray rocking curve of the (200) reflection and the AFM surface roughness.

U2 - 10.1039/B105978P

DO - 10.1039/B105978P

M3 - Article

SP - 3148

EP - 3153

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

SN - 0959-9428

IS - 12

ER -