Atomic layer epitaxy of GaAs in a hydride vapor phase system

Jouni Ahopelto, Hannu Kattelus, Ilkka Suni

    Research output: Contribution to conferenceConference AbstractScientific

    Original languageEnglish
    Publication statusPublished - 1989
    MoE publication typeNot Eligible
    Event9th International Conference on Crystal Growth, ICCG-9 - Sendai, Japan
    Duration: 20 Aug 198925 Aug 1989

    Conference

    Conference9th International Conference on Crystal Growth, ICCG-9
    CountryJapan
    CitySendai
    Period20/08/8925/08/89

    Cite this

    Ahopelto, J., Kattelus, H., & Suni, I. (1989). Atomic layer epitaxy of GaAs in a hydride vapor phase system. Abstract from 9th International Conference on Crystal Growth, ICCG-9, Sendai, Japan.