TY - JOUR
T1 - Atomic layer epitaxy of III-V compounds in a hydride vapor phase system
AU - Ahopelto, Jouni
AU - Kattelus, Hannu
AU - Saarilahti, Jaakko
AU - Suni, Ilkka
PY - 1990
Y1 - 1990
N2 - Gallium arsenide and indium arsenide layers have been grown by atomic layer epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The chlorides are formed by a chemical reaction between hydrogen chloride and the respective elemental metal. Argon acts as the carrier gas. The grown gallium arsenide layers are unintentionally doped to a level of ≥ 1017 cm-3. Mobilities up to 75% of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4% compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a photoluminescence peak with FWHM of 12 meV at 12 K originating from GaAs/InAs/GaAs single quantum well a few monolayers thick.
AB - Gallium arsenide and indium arsenide layers have been grown by atomic layer epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The chlorides are formed by a chemical reaction between hydrogen chloride and the respective elemental metal. Argon acts as the carrier gas. The grown gallium arsenide layers are unintentionally doped to a level of ≥ 1017 cm-3. Mobilities up to 75% of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4% compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a photoluminescence peak with FWHM of 12 meV at 12 K originating from GaAs/InAs/GaAs single quantum well a few monolayers thick.
UR - http://www.scopus.com/inward/record.url?scp=0025232942&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(90)90581-5
DO - 10.1016/0022-0248(90)90581-5
M3 - Article
AN - SCOPUS:0025232942
VL - 99
SP - 550
EP - 555
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -