Atomic layer epitaxy of III-V compounds in a hydride vapor phase system

Jouni Ahopelto, Hannu Kattelus, Jaakko Saarilahti, Ilkka Suni

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    Gallium arsenide and indium arsenide layers have been grown by atomic layer epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The chlorides are formed by a chemical reaction between hydrogen chloride and the respective elemental metal. Argon acts as the carrier gas. The grown gallium arsenide layers are unintentionally doped to a level of ≥ 1017 cm-3. Mobilities up to 75% of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4% compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a photoluminescence peak with FWHM of 12 meV at 12 K originating from GaAs/InAs/GaAs single quantum well a few monolayers thick.
    Original languageEnglish
    Pages (from-to)550-555
    Number of pages6
    JournalJournal of Crystal Growth
    Volume99
    Issue number1-4
    DOIs
    Publication statusPublished - 1990
    MoE publication typeNot Eligible

    Fingerprint

    Atomic layer epitaxy
    Gallium arsenide
    atomic layer epitaxy
    Hydrides
    hydrides
    gallium
    Indium arsenide
    Vapors
    vapor phases
    indium
    Gallium
    Backscattering
    Full width at half maximum
    chlorides
    Indium
    Semiconductor quantum wells
    Carrier concentration
    Argon
    Chemical reactions
    Monolayers

    Cite this

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    title = "Atomic layer epitaxy of III-V compounds in a hydride vapor phase system",
    abstract = "Gallium arsenide and indium arsenide layers have been grown by atomic layer epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The chlorides are formed by a chemical reaction between hydrogen chloride and the respective elemental metal. Argon acts as the carrier gas. The grown gallium arsenide layers are unintentionally doped to a level of ≥ 1017 cm-3. Mobilities up to 75{\%} of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4{\%} compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a photoluminescence peak with FWHM of 12 meV at 12 K originating from GaAs/InAs/GaAs single quantum well a few monolayers thick.",
    author = "Jouni Ahopelto and Hannu Kattelus and Jaakko Saarilahti and Ilkka Suni",
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    Atomic layer epitaxy of III-V compounds in a hydride vapor phase system. / Ahopelto, Jouni; Kattelus, Hannu; Saarilahti, Jaakko; Suni, Ilkka.

    In: Journal of Crystal Growth, Vol. 99, No. 1-4, 1990, p. 550-555.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Atomic layer epitaxy of III-V compounds in a hydride vapor phase system

    AU - Ahopelto, Jouni

    AU - Kattelus, Hannu

    AU - Saarilahti, Jaakko

    AU - Suni, Ilkka

    PY - 1990

    Y1 - 1990

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    AB - Gallium arsenide and indium arsenide layers have been grown by atomic layer epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The chlorides are formed by a chemical reaction between hydrogen chloride and the respective elemental metal. Argon acts as the carrier gas. The grown gallium arsenide layers are unintentionally doped to a level of ≥ 1017 cm-3. Mobilities up to 75% of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4% compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a photoluminescence peak with FWHM of 12 meV at 12 K originating from GaAs/InAs/GaAs single quantum well a few monolayers thick.

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