Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 550-555 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 99 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1990 |
| MoE publication type | Not Eligible |
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Atomic layer epitaxy of III-V compounds in a hydride vapor phase system. / Ahopelto, Jouni; Kattelus, Hannu; Saarilahti, Jaakko; Suni, Ilkka.
In: Journal of Crystal Growth, Vol. 99, No. 1-4, 1990, p. 550-555.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Atomic layer epitaxy of III-V compounds in a hydride vapor phase system
AU - Ahopelto, Jouni
AU - Kattelus, Hannu
AU - Saarilahti, Jaakko
AU - Suni, Ilkka
PY - 1990
Y1 - 1990
N2 - Gallium arsenide and indium arsenide layers have been grown by atomic layer epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The chlorides are formed by a chemical reaction between hydrogen chloride and the respective elemental metal. Argon acts as the carrier gas. The grown gallium arsenide layers are unintentionally doped to a level of ≥ 1017 cm-3. Mobilities up to 75% of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4% compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a photoluminescence peak with FWHM of 12 meV at 12 K originating from GaAs/InAs/GaAs single quantum well a few monolayers thick.
AB - Gallium arsenide and indium arsenide layers have been grown by atomic layer epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The chlorides are formed by a chemical reaction between hydrogen chloride and the respective elemental metal. Argon acts as the carrier gas. The grown gallium arsenide layers are unintentionally doped to a level of ≥ 1017 cm-3. Mobilities up to 75% of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4% compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a photoluminescence peak with FWHM of 12 meV at 12 K originating from GaAs/InAs/GaAs single quantum well a few monolayers thick.
UR - http://www.scopus.com/inward/record.url?scp=0025232942&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(90)90581-5
DO - 10.1016/0022-0248(90)90581-5
M3 - Article
VL - 99
SP - 550
EP - 555
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -