Atomic layer epitaxy of III-V compounds in a hydride vapor phase system

Jouni Ahopelto, Hannu Kattelus, Jaakko Saarilahti, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

Gallium arsenide and indium arsenide layers have been grown by atomic layer epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The chlorides are formed by a chemical reaction between hydrogen chloride and the respective elemental metal. Argon acts as the carrier gas. The grown gallium arsenide layers are unintentionally doped to a level of ≥ 1017 cm-3. Mobilities up to 75% of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4% compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a photoluminescence peak with FWHM of 12 meV at 12 K originating from GaAs/InAs/GaAs single quantum well a few monolayers thick.
Original languageEnglish
Pages (from-to)550-555
Number of pages6
JournalJournal of Crystal Growth
Volume99
Issue number1-4
DOIs
Publication statusPublished - 1990
MoE publication typeNot Eligible

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Atomic layer epitaxy
Gallium arsenide
atomic layer epitaxy
Hydrides
hydrides
gallium
Indium arsenide
Vapors
vapor phases
indium
Gallium
Backscattering
Full width at half maximum
chlorides
Indium
Semiconductor quantum wells
Carrier concentration
Argon
Chemical reactions
Monolayers

Cite this

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abstract = "Gallium arsenide and indium arsenide layers have been grown by atomic layer epitaxy (ALE) using gallium and indium chlorides and arsine as source materials. The chlorides are formed by a chemical reaction between hydrogen chloride and the respective elemental metal. Argon acts as the carrier gas. The grown gallium arsenide layers are unintentionally doped to a level of ≥ 1017 cm-3. Mobilities up to 75{\%} of the theoretical values for materials with such carrier concentrations are measured. For GaAs, the RBS/channeling technique gives minimum yield of 4{\%} compared to the corresponding random backscattering spectrum, indicating good crystalline quality. This is further confirmed by observation of a photoluminescence peak with FWHM of 12 meV at 12 K originating from GaAs/InAs/GaAs single quantum well a few monolayers thick.",
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Atomic layer epitaxy of III-V compounds in a hydride vapor phase system. / Ahopelto, Jouni; Kattelus, Hannu; Saarilahti, Jaakko; Suni, Ilkka.

In: Journal of Crystal Growth, Vol. 99, No. 1-4, 1990, p. 550-555.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Atomic layer epitaxy of III-V compounds in a hydride vapor phase system

AU - Ahopelto, Jouni

AU - Kattelus, Hannu

AU - Saarilahti, Jaakko

AU - Suni, Ilkka

PY - 1990

Y1 - 1990

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