Abstract
In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl2 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion etching system. The feasibility and reproducibility of the process are demonstrated by patterning GaN(0001) films by the ALE process using photoresist as an etch mask. The demonstrated ALE is deemed to be useful for the fabrication of nanoscale structures and high electron mobility transistors and expected to be adoptable for ALE of other materials.
| Original language | English |
|---|---|
| Article number | 060603 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 35 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Nov 2017 |
| MoE publication type | A1 Journal article-refereed |
Funding
ALE experiments in this research project were carried out at the Micronova Nanofabrication Centre (Aalto Nanofab) of Aalto University. The authors would like to thank all the users of the ICP-RIE for patience while the authors were developing the GaN ALE process. This work was supported by the MOPPI project of Aalto University AEF research program.