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Atomic layer etching of indium tin oxide
Christoffer Kauppinen
BA6211 Nanoelectronics
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
3
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Citations (Scopus)
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INIS
layers
100%
tin oxides
100%
indium
100%
etching
100%
surfaces
50%
modifications
20%
removal
20%
thin films
20%
ions
20%
tools
10%
energy
10%
plasma
10%
transistors
10%
volatility
10%
scattering
10%
masks
10%
indium chlorides
10%
boron chlorides
10%
Keyphrases
Indium Tin Oxide
100%
Atomic Layer Etching
100%
Etching Process
44%
Surface Modification
22%
Modified Surface
22%
Wafer
22%
Surface Removal
22%
Transistor
11%
Elevated Temperature
11%
Ion Energy
11%
Self-limiting
11%
Reactive Ion Etching
11%
Surface Scattering
11%
Conventional Photolithography
11%
Low Volatility
11%
InCl3
11%
Photoresist
11%
Ar Plasma
11%
Etching Mask
11%
Thin Channel
11%
Indium Tin Oxide Thin Film
11%
Recessed Channel
11%
Modification Surface
11%
Engineering
Atomic Layer
100%
Indium-Tin-Oxide
100%
Etching Process
44%
Modified Surface
22%
Thin Films
22%
Elevated Temperature
11%
Channel Transistor
11%
Ar Plasma
11%
Optical Lithography
11%
Ion Energy
11%
Photoresist
11%
Material Science
Indium Tin Oxide
100%
Surface (Surface Science)
60%
Surface Modification
40%
Thin Films
40%
Transistor
20%
Indium
20%
Reactive Ion Etching
20%