Back‐End CMOS Compatible and Flexible Ferroelectric Memories for Neuromorphic Computing and Adaptive Sensing

Keyphrases

• CMOS Technology 100%
• Flexible Ferroelectrics 100%
• Neuromorphic Computing 100%
• Ferroelectric Memory 100%
• Adaptive Sensing 100%
• Back-end-of-line 66%
• Doped HfO2 66%
• Molecular Ferroelectrics 66%
• Low Temperature 33%
• Ultra-low Power 33%
• Edge Computing 33%
• Two-terminal 33%
• Memory Device 33%
• Material Needs 33%
• Wearable Platform 33%
• Mainstream Technology 33%
• Computing Architecture 33%
• Three-terminal 33%
• Exploratory Phase 33%
• Flexible Platform 33%
• New Functional Material 33%
• Neuromorphic System 33%
• Neuromorphic Devices 33%
• Ferroelectric Field-effect Transistor (FeFET) 33%
• Ferroelectric HfO2 33%
• Memory Component 33%
• Von Neumann 33%
• In-memory Computing 33%
• Smart Sensing 33%
• CMOS Integration 33%
• Multi-bit Memory 33%
• Unconventional Computing 33%
• Ferroelectric Tunnel Junction 33%
• Memory Technologies 33%

INIS

• ferroelectric materials 100%
• devices 28%
• doped materials 28%
• computer architecture 28%
• performance 14%
• comparative evaluations 14%
• applications 14%
• reviews 14%
• interfaces 14%
• low temperature 14%
• power 14%
• industry 14%
• tunnel junctions 14%
• exploration 14%
• field effect transistors 14%
• memory devices 14%

Material Science

• Ferroelectric Material 100%
• Neuromorphic Computing 100%
• Novel Device 14%
• Electronic Circuit 14%
• Field Effect Transistors 14%
• Functional Material 14%