Backside aluminisation effects on solar cell performance

Zs. Makaro (Corresponding Author), G. Battistig, Z. Horwath, Jari Likonen, I. Barsony

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

In this work the effect if the back surface field (BSF) formation by high temperature treatment of backside aluminisation was analysed in silicon solar cells. Systematic I-V and spectral response (SR) characterisation shows an obviously superior performance of AI-diffused cells especially in the red near infrared region compared to those with conventional boron BSF. These findings along with the result of the performed XTEM, NRA (Resonance Nuclear Reaction Analysis), SIMS, and ECV (Electrochemical CV) analyses on the backside layer structure lead to the conclusion that the main contribution to the improvement, relative to the conventional reference sample, is the minority carrier lifetime enhancement by gettering effect in the AI-diffusion tail and the improved light trapping by backside roughening.
Original languageEnglish
Pages (from-to)481-485
JournalVacuum
Volume50
Issue number3-4
DOIs
Publication statusPublished - 1998
MoE publication typeA1 Journal article-refereed

Fingerprint

Solar cells
solar cells
Boron
Nuclear reactions
Carrier lifetime
Silicon solar cells
carrier lifetime
Secondary ion mass spectrometry
minority carriers
spectral sensitivity
nuclear reactions
secondary ion mass spectrometry
boron
trapping
Infrared radiation
augmentation
cells
Temperature

Keywords

  • solar cells

Cite this

Makaro, Z., Battistig, G., Horwath, Z., Likonen, J., & Barsony, I. (1998). Backside aluminisation effects on solar cell performance. Vacuum, 50(3-4), 481-485. https://doi.org/10.1016/S0042-207X(98)00083-9
Makaro, Zs. ; Battistig, G. ; Horwath, Z. ; Likonen, Jari ; Barsony, I. / Backside aluminisation effects on solar cell performance. In: Vacuum. 1998 ; Vol. 50, No. 3-4. pp. 481-485.
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Makaro, Z, Battistig, G, Horwath, Z, Likonen, J & Barsony, I 1998, 'Backside aluminisation effects on solar cell performance', Vacuum, vol. 50, no. 3-4, pp. 481-485. https://doi.org/10.1016/S0042-207X(98)00083-9

Backside aluminisation effects on solar cell performance. / Makaro, Zs. (Corresponding Author); Battistig, G.; Horwath, Z.; Likonen, Jari; Barsony, I.

In: Vacuum, Vol. 50, No. 3-4, 1998, p. 481-485.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Backside aluminisation effects on solar cell performance

AU - Makaro, Zs.

AU - Battistig, G.

AU - Horwath, Z.

AU - Likonen, Jari

AU - Barsony, I.

PY - 1998

Y1 - 1998

N2 - In this work the effect if the back surface field (BSF) formation by high temperature treatment of backside aluminisation was analysed in silicon solar cells. Systematic I-V and spectral response (SR) characterisation shows an obviously superior performance of AI-diffused cells especially in the red near infrared region compared to those with conventional boron BSF. These findings along with the result of the performed XTEM, NRA (Resonance Nuclear Reaction Analysis), SIMS, and ECV (Electrochemical CV) analyses on the backside layer structure lead to the conclusion that the main contribution to the improvement, relative to the conventional reference sample, is the minority carrier lifetime enhancement by gettering effect in the AI-diffusion tail and the improved light trapping by backside roughening.

AB - In this work the effect if the back surface field (BSF) formation by high temperature treatment of backside aluminisation was analysed in silicon solar cells. Systematic I-V and spectral response (SR) characterisation shows an obviously superior performance of AI-diffused cells especially in the red near infrared region compared to those with conventional boron BSF. These findings along with the result of the performed XTEM, NRA (Resonance Nuclear Reaction Analysis), SIMS, and ECV (Electrochemical CV) analyses on the backside layer structure lead to the conclusion that the main contribution to the improvement, relative to the conventional reference sample, is the minority carrier lifetime enhancement by gettering effect in the AI-diffusion tail and the improved light trapping by backside roughening.

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U2 - 10.1016/S0042-207X(98)00083-9

DO - 10.1016/S0042-207X(98)00083-9

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EP - 485

JO - Vacuum

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SN - 0042-207X

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