Backside aluminisation effects on solar cell performance

Zs. Makaro (Corresponding Author), G. Battistig, Z. Horwath, Jari Likonen, I. Barsony

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    In this work the effect if the back surface field (BSF) formation by high temperature treatment of backside aluminisation was analysed in silicon solar cells. Systematic I-V and spectral response (SR) characterisation shows an obviously superior performance of AI-diffused cells especially in the red near infrared region compared to those with conventional boron BSF. These findings along with the result of the performed XTEM, NRA (Resonance Nuclear Reaction Analysis), SIMS, and ECV (Electrochemical CV) analyses on the backside layer structure lead to the conclusion that the main contribution to the improvement, relative to the conventional reference sample, is the minority carrier lifetime enhancement by gettering effect in the AI-diffusion tail and the improved light trapping by backside roughening.
    Original languageEnglish
    Pages (from-to)481-485
    JournalVacuum
    Volume50
    Issue number3-4
    DOIs
    Publication statusPublished - 1998
    MoE publication typeA1 Journal article-refereed

    Keywords

    • solar cells

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  • Cite this

    Makaro, Z., Battistig, G., Horwath, Z., Likonen, J., & Barsony, I. (1998). Backside aluminisation effects on solar cell performance. Vacuum, 50(3-4), 481-485. https://doi.org/10.1016/S0042-207X(98)00083-9