Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy

W. Li; Jari Likonen; J. Haapamaa; Markus Pessa

doi:10.1016/S0022-0248(99)00598-9

Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy

W. Li (Corresponding Author), Jari Likonen, J. Haapamaa, Markus Pessa

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×10¹⁹ cm⁻³ at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p⁺–n⁺ GaInP tunnel diode with a high conductance of 15 mA/cm² at 1.7 mV has been achieved.

Original language	English
Pages (from-to)	459-462
Number of pages	4
Journal	Journal of Crystal Growth
Volume	209
Issue number	2-3
DOIs	https://doi.org/10.1016/S0022-0248(99)00598-9
Publication status	Published - 2000
MoE publication type	A1 Journal article-refereed

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title = "Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy",

abstract = "The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.",

author = "W. Li and Jari Likonen and J. Haapamaa and Markus Pessa",

note = "Project code: KET4134",

year = "2000",

doi = "10.1016/S0022-0248(99)00598-9",

language = "English",

volume = "209",

pages = "459--462",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "2-3",

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T1 - Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy

AU - Li, W.

AU - Likonen, Jari

AU - Haapamaa, J.

AU - Pessa, Markus

N1 - Project code: KET4134

PY - 2000

Y1 - 2000

N2 - The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.

AB - The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.

U2 - 10.1016/S0022-0248(99)00598-9

DO - 10.1016/S0022-0248(99)00598-9

M3 - Article

SN - 0022-0248

VL - 209

SP - 459

EP - 462

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-3

ER -

Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy

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