Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy

W. Li (Corresponding Author), Jari Likonen, J. Haapamaa, Markus Pessa

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.

Original languageEnglish
Pages (from-to)459-462
Number of pages4
JournalJournal of Crystal Growth
Volume209
Issue number2-3
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

Fingerprint

Gas source molecular beam epitaxy
Tunnel diodes
tunnel diodes
molecular beam epitaxy
gases
Metallorganic vapor phase epitaxy
Growth temperature
Secondary ion mass spectrometry
vapor phase epitaxy
secondary ion mass spectrometry
Doping (additives)
augmentation
profiles
Temperature
temperature

Cite this

@article{8bb4a66ac8c647f78c325d50083c8006,
title = "Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy",
abstract = "The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.",
author = "W. Li and Jari Likonen and J. Haapamaa and Markus Pessa",
note = "Project code: KET4134",
year = "2000",
doi = "10.1016/S0022-0248(99)00598-9",
language = "English",
volume = "209",
pages = "459--462",
journal = "Journal of Crystal Growth",
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}

Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy. / Li, W. (Corresponding Author); Likonen, Jari; Haapamaa, J.; Pessa, Markus.

In: Journal of Crystal Growth, Vol. 209, No. 2-3, 2000, p. 459-462.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy

AU - Li, W.

AU - Likonen, Jari

AU - Haapamaa, J.

AU - Pessa, Markus

N1 - Project code: KET4134

PY - 2000

Y1 - 2000

N2 - The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.

AB - The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.

U2 - 10.1016/S0022-0248(99)00598-9

DO - 10.1016/S0022-0248(99)00598-9

M3 - Article

VL - 209

SP - 459

EP - 462

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2-3

ER -