Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy

W. Li (Corresponding Author), Jari Likonen, J. Haapamaa, Markus Pessa

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.

    Original languageEnglish
    Pages (from-to)459-462
    Number of pages4
    JournalJournal of Crystal Growth
    Volume209
    Issue number2-3
    DOIs
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Gas source molecular beam epitaxy
    Tunnel diodes
    tunnel diodes
    molecular beam epitaxy
    gases
    Metallorganic vapor phase epitaxy
    Growth temperature
    Secondary ion mass spectrometry
    vapor phase epitaxy
    secondary ion mass spectrometry
    Doping (additives)
    augmentation
    profiles
    Temperature
    temperature

    Cite this

    @article{8bb4a66ac8c647f78c325d50083c8006,
    title = "Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy",
    abstract = "The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.",
    author = "W. Li and Jari Likonen and J. Haapamaa and Markus Pessa",
    note = "Project code: KET4134",
    year = "2000",
    doi = "10.1016/S0022-0248(99)00598-9",
    language = "English",
    volume = "209",
    pages = "459--462",
    journal = "Journal of Crystal Growth",
    issn = "0022-0248",
    publisher = "Elsevier",
    number = "2-3",

    }

    Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy. / Li, W. (Corresponding Author); Likonen, Jari; Haapamaa, J.; Pessa, Markus.

    In: Journal of Crystal Growth, Vol. 209, No. 2-3, 2000, p. 459-462.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Be redistribution in GaInP and growth of GaInP/A1InP tunnel diode by gas source molecular beam epitaxy

    AU - Li, W.

    AU - Likonen, Jari

    AU - Haapamaa, J.

    AU - Pessa, Markus

    N1 - Project code: KET4134

    PY - 2000

    Y1 - 2000

    N2 - The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.

    AB - The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4×1019 cm−3 at growth temperature of 500°C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p+–n+ GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved.

    U2 - 10.1016/S0022-0248(99)00598-9

    DO - 10.1016/S0022-0248(99)00598-9

    M3 - Article

    VL - 209

    SP - 459

    EP - 462

    JO - Journal of Crystal Growth

    JF - Journal of Crystal Growth

    SN - 0022-0248

    IS - 2-3

    ER -