INIS
growth
100%
diffusion
100%
gases
100%
molecular beam epitaxy
100%
tunnel diodes
100%
layers
66%
levels
33%
doped materials
33%
concentration
33%
ions
33%
mass spectrometry
33%
gallium arsenides
33%
vapor phase epitaxy
33%
Keyphrases
Gas Source Molecular Beam Epitaxy
100%
GaInP
100%
Tunnel Diode
100%
Low Temperature
20%
Growth Temperature
20%
Secondary Ion Mass Spectrometry
20%
Gallium Arsenide
20%
Doping Level
20%
Diffusion Profile
20%
Metal Organic Vapor Phase Epitaxy (MOVPE)
20%
Concentration-dependent Diffusion
20%
Reduced Diffusion
20%
Doped Layers
20%
High Conductance
20%
Engineering
Source Gas
100%
Tunnel Diode
100%
Low-Temperature
50%
Doping Level
50%
Gallium Arsenide
50%
Growth Temperature
50%
Doped Layer
50%
Earth and Planetary Sciences
Tunnel Diode
100%
Molecular Beam Epitaxy
100%
Secondary Ion Mass Spectrometry
50%
Vapor Phase Epitaxy
50%
Physics
Tunnel Diode
100%
Molecular Beam Epitaxy
100%
Metalorganic Vapor Phase Epitaxy
50%
Secondary Ion Mass Spectrometry
50%