Benchmarking of 50 nm features in thermal nanoimprint

C. Gourgon (Corresponding Author), N. Chaix, H. Schift, M. Tormen, S. Landis, C. M. Sotomayor Torres, A. Kristensen, R. H. Pedersen, M. B. Christiansen, I. Fernandez-Cuesta, D. Mendels, L. Montelius, Tomi Haatainen

    Research output: Contribution to journalArticleScientificpeer-review

    12 Citations (Scopus)


    The objective of this benchmarking is to establish a comparison of several tools and processes used in thermal NIL with Si stamps at the nanoscale among the authors’ laboratories.
    The Si stamps have large arrays of 50nm dense lines and were imprinted in all these laboratories in a ∼100nm thick mr-18010E film. Other materials, such as mr-17010E, were also tested. Good patterns were obtained and some limitations were identified. Reducing the pressure to 15bars enables the printing of 50nm structures without pulling them off.
    At higher pressures, some bending effects resulting in pattern deformation were observed. It was proven that a pressure of 1.5bars is sufficient to imprint perfect 50nm lines. The influence of the antiadhesive layer and mold design has been characterized by the demonstration of pulled off lines in some cases.
    Moreover, it has been shown that the scatterometry method is particularly useful for the characterization of 50nm lines and that the residual layer thickness corresponds to the theoretical estimate as long as the lines are well defined.
    One process was demonstrated which combines high reproducibility with high throughput, achieving a cycle time of 2min.
    Original languageEnglish
    Pages (from-to)2373-2378
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Issue number6
    Publication statusPublished - 2007
    MoE publication typeA1 Journal article-refereed


    • stamp imprint lithography
    • nanoimprint lithography
    • step & stamp imprint lithography
    • step


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