The Si stamps have large arrays of 50nm dense lines and were imprinted in all these laboratories in a ∼100nm thick mr-18010E film. Other materials, such as mr-17010E, were also tested. Good patterns were obtained and some limitations were identified. Reducing the pressure to 15bars enables the printing of 50nm structures without pulling them off.
At higher pressures, some bending effects resulting in pattern deformation were observed. It was proven that a pressure of 1.5bars is sufficient to imprint perfect 50nm lines. The influence of the antiadhesive layer and mold design has been characterized by the demonstration of pulled off lines in some cases.
Moreover, it has been shown that the scatterometry method is particularly useful for the characterization of 50nm lines and that the residual layer thickness corresponds to the theoretical estimate as long as the lines are well defined.
One process was demonstrated which combines high reproducibility with high throughput, achieving a cycle time of 2min.
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2007|
|MoE publication type||A1 Journal article-refereed|
- stamp imprint lithography
- nanoimprint lithography
- step & stamp imprint lithography