Benchmarking of 50 nm features in thermal nanoimprint

C. Gourgon (Corresponding Author), N. Chaix, H. Schift, M. Tormen, S. Landis, C. M. Sotomayor Torres, A. Kristensen, R. H. Pedersen, M. B. Christiansen, I. Fernandez-Cuesta, D. Mendels, L. Montelius, Tomi Haatainen

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

The objective of this benchmarking is to establish a comparison of several tools and processes used in thermal NIL with Si stamps at the nanoscale among the authors’ laboratories.
The Si stamps have large arrays of 50nm dense lines and were imprinted in all these laboratories in a ∼100nm thick mr-18010E film. Other materials, such as mr-17010E, were also tested. Good patterns were obtained and some limitations were identified. Reducing the pressure to 15bars enables the printing of 50nm structures without pulling them off.
At higher pressures, some bending effects resulting in pattern deformation were observed. It was proven that a pressure of 1.5bars is sufficient to imprint perfect 50nm lines. The influence of the antiadhesive layer and mold design has been characterized by the demonstration of pulled off lines in some cases.
Moreover, it has been shown that the scatterometry method is particularly useful for the characterization of 50nm lines and that the residual layer thickness corresponds to the theoretical estimate as long as the lines are well defined.
One process was demonstrated which combines high reproducibility with high throughput, achieving a cycle time of 2min.
Original languageEnglish
Pages (from-to)2373-2378
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number6
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Fingerprint

pulling
printing
cycles
estimates

Keywords

  • stamp imprint lithography
  • nanoimprint lithography
  • step & stamp imprint lithography
  • step

Cite this

Gourgon, C. ; Chaix, N. ; Schift, H. ; Tormen, M. ; Landis, S. ; Torres, C. M. Sotomayor ; Kristensen, A. ; Pedersen, R. H. ; Christiansen, M. B. ; Fernandez-Cuesta, I. ; Mendels, D. ; Montelius, L. ; Haatainen, Tomi. / Benchmarking of 50 nm features in thermal nanoimprint. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 ; Vol. 25, No. 6. pp. 2373-2378.
@article{535a252c406d4054b807e8449762b859,
title = "Benchmarking of 50 nm features in thermal nanoimprint",
abstract = "The objective of this benchmarking is to establish a comparison of several tools and processes used in thermal NIL with Si stamps at the nanoscale among the authors’ laboratories. The Si stamps have large arrays of 50nm dense lines and were imprinted in all these laboratories in a ∼100nm thick mr-18010E film. Other materials, such as mr-17010E, were also tested. Good patterns were obtained and some limitations were identified. Reducing the pressure to 15bars enables the printing of 50nm structures without pulling them off. At higher pressures, some bending effects resulting in pattern deformation were observed. It was proven that a pressure of 1.5bars is sufficient to imprint perfect 50nm lines. The influence of the antiadhesive layer and mold design has been characterized by the demonstration of pulled off lines in some cases. Moreover, it has been shown that the scatterometry method is particularly useful for the characterization of 50nm lines and that the residual layer thickness corresponds to the theoretical estimate as long as the lines are well defined. One process was demonstrated which combines high reproducibility with high throughput, achieving a cycle time of 2min.",
keywords = "stamp imprint lithography, nanoimprint lithography, step & stamp imprint lithography, step",
author = "C. Gourgon and N. Chaix and H. Schift and M. Tormen and S. Landis and Torres, {C. M. Sotomayor} and A. Kristensen and Pedersen, {R. H.} and Christiansen, {M. B.} and I. Fernandez-Cuesta and D. Mendels and L. Montelius and Tomi Haatainen",
year = "2007",
doi = "10.1116/1.2794064",
language = "English",
volume = "25",
pages = "2373--2378",
journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "6",

}

Gourgon, C, Chaix, N, Schift, H, Tormen, M, Landis, S, Torres, CMS, Kristensen, A, Pedersen, RH, Christiansen, MB, Fernandez-Cuesta, I, Mendels, D, Montelius, L & Haatainen, T 2007, 'Benchmarking of 50 nm features in thermal nanoimprint', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 25, no. 6, pp. 2373-2378. https://doi.org/10.1116/1.2794064

Benchmarking of 50 nm features in thermal nanoimprint. / Gourgon, C. (Corresponding Author); Chaix, N.; Schift, H.; Tormen, M.; Landis, S.; Torres, C. M. Sotomayor; Kristensen, A.; Pedersen, R. H.; Christiansen, M. B.; Fernandez-Cuesta, I.; Mendels, D.; Montelius, L.; Haatainen, Tomi.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 6, 2007, p. 2373-2378.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Benchmarking of 50 nm features in thermal nanoimprint

AU - Gourgon, C.

AU - Chaix, N.

AU - Schift, H.

AU - Tormen, M.

AU - Landis, S.

AU - Torres, C. M. Sotomayor

AU - Kristensen, A.

AU - Pedersen, R. H.

AU - Christiansen, M. B.

AU - Fernandez-Cuesta, I.

AU - Mendels, D.

AU - Montelius, L.

AU - Haatainen, Tomi

PY - 2007

Y1 - 2007

N2 - The objective of this benchmarking is to establish a comparison of several tools and processes used in thermal NIL with Si stamps at the nanoscale among the authors’ laboratories. The Si stamps have large arrays of 50nm dense lines and were imprinted in all these laboratories in a ∼100nm thick mr-18010E film. Other materials, such as mr-17010E, were also tested. Good patterns were obtained and some limitations were identified. Reducing the pressure to 15bars enables the printing of 50nm structures without pulling them off. At higher pressures, some bending effects resulting in pattern deformation were observed. It was proven that a pressure of 1.5bars is sufficient to imprint perfect 50nm lines. The influence of the antiadhesive layer and mold design has been characterized by the demonstration of pulled off lines in some cases. Moreover, it has been shown that the scatterometry method is particularly useful for the characterization of 50nm lines and that the residual layer thickness corresponds to the theoretical estimate as long as the lines are well defined. One process was demonstrated which combines high reproducibility with high throughput, achieving a cycle time of 2min.

AB - The objective of this benchmarking is to establish a comparison of several tools and processes used in thermal NIL with Si stamps at the nanoscale among the authors’ laboratories. The Si stamps have large arrays of 50nm dense lines and were imprinted in all these laboratories in a ∼100nm thick mr-18010E film. Other materials, such as mr-17010E, were also tested. Good patterns were obtained and some limitations were identified. Reducing the pressure to 15bars enables the printing of 50nm structures without pulling them off. At higher pressures, some bending effects resulting in pattern deformation were observed. It was proven that a pressure of 1.5bars is sufficient to imprint perfect 50nm lines. The influence of the antiadhesive layer and mold design has been characterized by the demonstration of pulled off lines in some cases. Moreover, it has been shown that the scatterometry method is particularly useful for the characterization of 50nm lines and that the residual layer thickness corresponds to the theoretical estimate as long as the lines are well defined. One process was demonstrated which combines high reproducibility with high throughput, achieving a cycle time of 2min.

KW - stamp imprint lithography

KW - nanoimprint lithography

KW - step & stamp imprint lithography

KW - step

U2 - 10.1116/1.2794064

DO - 10.1116/1.2794064

M3 - Article

VL - 25

SP - 2373

EP - 2378

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

SN - 2166-2746

IS - 6

ER -