Bias-induced stress transitions in sputtered TiN films

Hannu Kattelus, Jawahar Tandon, C. Sala, Marc Nicolet

Research output: Contribution to journalArticleScientificpeer-review

47 Citations (Scopus)

Abstract

We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.
Original languageEnglish
Pages (from-to)1850 - 1854
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume4
Issue number4
DOIs
Publication statusPublished - 1986
MoE publication typeNot Eligible

Fingerprint

Titanium nitride
titanium nitrides
Stress relief
Diffusion barriers
Silicon
Bias voltage
Aluminum
Sputtering
Gases
sputtering
aluminum
electrical resistivity
electric potential
silicon
Substrates
Processing
gases
titanium nitride

Cite this

Kattelus, Hannu ; Tandon, Jawahar ; Sala, C. ; Nicolet, Marc. / Bias-induced stress transitions in sputtered TiN films. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1986 ; Vol. 4, No. 4. pp. 1850 - 1854.
@article{dced46d92ee84dfe89f2dab0df356d1c,
title = "Bias-induced stress transitions in sputtered TiN films",
abstract = "We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.",
author = "Hannu Kattelus and Jawahar Tandon and C. Sala and Marc Nicolet",
year = "1986",
doi = "10.1116/1.573776",
language = "English",
volume = "4",
pages = "1850 -- 1854",
journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",
issn = "0734-2101",
publisher = "American Vacuum Society AVS",
number = "4",

}

Bias-induced stress transitions in sputtered TiN films. / Kattelus, Hannu; Tandon, Jawahar; Sala, C.; Nicolet, Marc.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 4, No. 4, 1986, p. 1850 - 1854.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Bias-induced stress transitions in sputtered TiN films

AU - Kattelus, Hannu

AU - Tandon, Jawahar

AU - Sala, C.

AU - Nicolet, Marc

PY - 1986

Y1 - 1986

N2 - We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.

AB - We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.

U2 - 10.1116/1.573776

DO - 10.1116/1.573776

M3 - Article

VL - 4

SP - 1850

EP - 1854

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

IS - 4

ER -