Bias-induced stress transitions in sputtered TiN films

Hannu Kattelus; Jawahar Tandon; C. Sala; Marc Nicolet

doi:10.1116/1.573776

Bias-induced stress transitions in sputtered TiN films

Hannu Kattelus, Jawahar Tandon, C. Sala, Marc Nicolet

VTT Technical Research Centre of Finland

California Institute of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

48 Citations (Scopus)

Abstract

We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.

Original language	English
Pages (from-to)	1850-1854
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	4
Issue number	4
DOIs	https://doi.org/10.1116/1.573776
Publication status	Published - 1986
MoE publication type	A1 Journal article-refereed

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title = "Bias-induced stress transitions in sputtered TiN films",

abstract = "We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.",

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AU - Kattelus, Hannu

AU - Tandon, Jawahar

AU - Sala, C.

AU - Nicolet, Marc

PY - 1986

Y1 - 1986

N2 - We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.

AB - We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.

U2 - 10.1116/1.573776

DO - 10.1116/1.573776

M3 - Article

SN - 0734-2101

VL - 4

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Bias-induced stress transitions in sputtered TiN films

Abstract

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