Bias-induced stress transitions in sputtered TiN films

Hannu Kattelus, Jawahar Tandon, C. Sala, Marc Nicolet

Research output: Contribution to journalArticleScientificpeer-review

48 Citations (Scopus)


We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.
Original languageEnglish
Pages (from-to)1850-1854
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - 1986
MoE publication typeA1 Journal article-refereed


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