A new on-wafer bidirectional nondestructive measurement method is demonstrated for measuring losses in three dimensional integrated optical waveguides. A thermally oxidized silicon wafer is used as substrate for silicon nitride multimode waveguides. The measurement is based on p-i-n photodetectors integrated near the waveguide. In order to eliminate the effect of different sensitivities of adjacent p-i-n detectors, the light is launched separately to both ends of the waveguide. The method can be applied to test structures in optoelectronic integrated circuits (OEIC's).
|Series||Proceedings of SPIE|
|Period||5/09/89 → 8/09/89|