The APLAC implementation of the Bipolar Junction Transistor (BJT) device model is documented. The current and charge equations and their physical background are covered. The documentation is complete and consists of all the equations required for the implementation.
| Original language | English |
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| Place of Publication | Espoo |
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| Publisher | Teknillinen korkeakoulu |
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| Number of pages | 43 |
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| ISBN (Print) | 951-22-1533-0 |
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| Publication status | Published - 1994 |
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| MoE publication type | D4 Published development or research report or study |
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| Series | Helsinki University of Technology: Faculty of Electrical Engineering: Circuit Theory Laboratory. Report |
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| Number | CT-17 |
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| ISSN | 0784-5979 |
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