Bonding of ALD alumina for advanced SOI substrates

Tommi Suni (Corresponding author), Riikka L. Puurunen, Oili Ylivaara, Hannu Kattelus, Kimmo Henttinen, Tadashi Ishida, Hiroyuki Fujita

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    7 Citations (Scopus)

    Abstract

    Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.

    Original languageEnglish
    Title of host publicationSemiconductor Wafer Bonding 11
    Subtitle of host publicationScience, Technology, and Applications - In Honor of Ulrich Gosele
    Pages137-144
    Number of pages8
    Volume33
    Edition4
    DOIs
    Publication statusPublished - 15 Oct 2010
    MoE publication typeA4 Article in a conference publication
    EventSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting - Las Vegas, NV, United States
    Duration: 10 Oct 201015 Oct 2010

    Conference

    ConferenceSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting
    CountryUnited States
    CityLas Vegas, NV
    Period10/10/1015/10/10

    Fingerprint

    Atomic layer deposition
    Alumina
    Silicon
    Substrates
    Thin films
    Insulating materials
    MEMS
    Silica
    Transmission electron microscopy
    Fabrication

    Cite this

    Suni, T., Puurunen, R. L., Ylivaara, O., Kattelus, H., Henttinen, K., Ishida, T., & Fujita, H. (2010). Bonding of ALD alumina for advanced SOI substrates. In Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele (4 ed., Vol. 33, pp. 137-144) https://doi.org/10.1149/1.3483501
    Suni, Tommi ; Puurunen, Riikka L. ; Ylivaara, Oili ; Kattelus, Hannu ; Henttinen, Kimmo ; Ishida, Tadashi ; Fujita, Hiroyuki. / Bonding of ALD alumina for advanced SOI substrates. Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. Vol. 33 4. ed. 2010. pp. 137-144
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    title = "Bonding of ALD alumina for advanced SOI substrates",
    abstract = "Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.",
    author = "Tommi Suni and Puurunen, {Riikka L.} and Oili Ylivaara and Hannu Kattelus and Kimmo Henttinen and Tadashi Ishida and Hiroyuki Fujita",
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    Suni, T, Puurunen, RL, Ylivaara, O, Kattelus, H, Henttinen, K, Ishida, T & Fujita, H 2010, Bonding of ALD alumina for advanced SOI substrates. in Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 edn, vol. 33, pp. 137-144, Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3483501

    Bonding of ALD alumina for advanced SOI substrates. / Suni, Tommi (Corresponding author); Puurunen, Riikka L.; Ylivaara, Oili; Kattelus, Hannu; Henttinen, Kimmo; Ishida, Tadashi; Fujita, Hiroyuki.

    Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. Vol. 33 4. ed. 2010. p. 137-144.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Henttinen, Kimmo

    AU - Ishida, Tadashi

    AU - Fujita, Hiroyuki

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    AB - Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.

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    Suni T, Puurunen RL, Ylivaara O, Kattelus H, Henttinen K, Ishida T et al. Bonding of ALD alumina for advanced SOI substrates. In Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 ed. Vol. 33. 2010. p. 137-144 https://doi.org/10.1149/1.3483501