Bonding of ALD alumina for advanced SOI substrates

Tommi Suni; Riikka L. Puurunen; Oili Ylivaara; Hannu Kattelus; Kimmo Henttinen; Tadashi Ishida; Hiroyuki Fujita

doi:10.1149/1.3483501

Bonding of ALD alumina for advanced SOI substrates

Tommi Suni^* (Corresponding author), Riikka L. Puurunen, Oili Ylivaara, Hannu Kattelus, Kimmo Henttinen, Tadashi Ishida, Hiroyuki Fujita

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

8 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al ₂O₃) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al₂O₃ can be used as a buried layer in novel SOI substrates.

Original language	English
Title of host publication	Semiconductor Wafer Bonding 11
Subtitle of host publication	Science, Technology, and Applications - In Honor of Ulrich Gosele
Pages	137-144
Number of pages	8
Volume	33
Edition	4
DOIs	https://doi.org/10.1149/1.3483501
Publication status	Published - 15 Oct 2010
MoE publication type	A4 Article in a conference publication
Event	Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting - Las Vegas, NV, United States Duration: 10 Oct 2010 → 15 Oct 2010

Conference

Conference	Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting
Country/Territory	United States
City	Las Vegas, NV
Period	10/10/10 → 15/10/10

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title = "Bonding of ALD alumina for advanced SOI substrates",

abstract = "Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.",

author = "Tommi Suni and Puurunen, {Riikka L.} and Oili Ylivaara and Hannu Kattelus and Kimmo Henttinen and Tadashi Ishida and Hiroyuki Fujita",

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doi = "10.1149/1.3483501",

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Suni, T, Puurunen, RL, Ylivaara, O, Kattelus, H, Henttinen, K, Ishida, T & Fujita, H 2010, Bonding of ALD alumina for advanced SOI substrates. in Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 edn, vol. 33, pp. 137-144, Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting, Las Vegas, NV, Nevada, United States, 10/10/10. https://doi.org/10.1149/1.3483501

Bonding of ALD alumina for advanced SOI substrates. / Suni, Tommi (Corresponding author); Puurunen, Riikka L.; Ylivaara, Oili et al.
Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. Vol. 33 4. ed. 2010. p. 137-144.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Ishida, Tadashi

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AB - Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.

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ER -

Bonding of ALD alumina for advanced SOI substrates

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