Bonding of ALD alumina for advanced SOI substrates

Tommi Suni (Corresponding author), Riikka L. Puurunen, Oili Ylivaara, Hannu Kattelus, Kimmo Henttinen, Tadashi Ishida, Hiroyuki Fujita

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

7 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding 11
Subtitle of host publicationScience, Technology, and Applications - In Honor of Ulrich Gosele
Pages137-144
Number of pages8
Volume33
Edition4
DOIs
Publication statusPublished - 15 Oct 2010
MoE publication typeA4 Article in a conference publication
EventSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 10 Oct 201015 Oct 2010

Conference

ConferenceSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1015/10/10

Fingerprint

Atomic layer deposition
Alumina
Silicon
Substrates
Thin films
Insulating materials
MEMS
Silica
Transmission electron microscopy
Fabrication

Cite this

Suni, T., Puurunen, R. L., Ylivaara, O., Kattelus, H., Henttinen, K., Ishida, T., & Fujita, H. (2010). Bonding of ALD alumina for advanced SOI substrates. In Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele (4 ed., Vol. 33, pp. 137-144) https://doi.org/10.1149/1.3483501
Suni, Tommi ; Puurunen, Riikka L. ; Ylivaara, Oili ; Kattelus, Hannu ; Henttinen, Kimmo ; Ishida, Tadashi ; Fujita, Hiroyuki. / Bonding of ALD alumina for advanced SOI substrates. Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. Vol. 33 4. ed. 2010. pp. 137-144
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Suni, T, Puurunen, RL, Ylivaara, O, Kattelus, H, Henttinen, K, Ishida, T & Fujita, H 2010, Bonding of ALD alumina for advanced SOI substrates. in Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 edn, vol. 33, pp. 137-144, Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3483501

Bonding of ALD alumina for advanced SOI substrates. / Suni, Tommi (Corresponding author); Puurunen, Riikka L.; Ylivaara, Oili; Kattelus, Hannu; Henttinen, Kimmo; Ishida, Tadashi; Fujita, Hiroyuki.

Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. Vol. 33 4. ed. 2010. p. 137-144.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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Suni T, Puurunen RL, Ylivaara O, Kattelus H, Henttinen K, Ishida T et al. Bonding of ALD alumina for advanced SOI substrates. In Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 ed. Vol. 33. 2010. p. 137-144 https://doi.org/10.1149/1.3483501