### Abstract

The effect of degenerate level n-type doping on the bulk acoustic wave propagation properties in single crystal silicon is studied.

Keyes' theory [1] is used to calculate the electronic effect of free electrons on the elastic constants c ij as function of temperature. Slowness curves are calculated for the bulk acoustic wave modes via solution of the Christoffel equation at several doping levels. Variation with respect to temperature is performed in order to extract the linear temperature coefficient of slowness as function of propagation direction.

It is found that n-type doping has the largest effect on the slow shear mode and that temperature stable wave propagation directions exist with doping levels above 10 19 cm -3 . Comparison to experiment is made via measured temperature coefficients of frequency of square plate resonators vibrating in the Lamé mode which is a pure superposition of shear bulk acoustic waves. Good agreement is found.

Keyes' theory [1] is used to calculate the electronic effect of free electrons on the elastic constants c ij as function of temperature. Slowness curves are calculated for the bulk acoustic wave modes via solution of the Christoffel equation at several doping levels. Variation with respect to temperature is performed in order to extract the linear temperature coefficient of slowness as function of propagation direction.

It is found that n-type doping has the largest effect on the slow shear mode and that temperature stable wave propagation directions exist with doping levels above 10 19 cm -3 . Comparison to experiment is made via measured temperature coefficients of frequency of square plate resonators vibrating in the Lamé mode which is a pure superposition of shear bulk acoustic waves. Good agreement is found.

Original language | English |
---|---|

Title of host publication | Proceedings |

Subtitle of host publication | International Frequency Control Symposium, IFCS 2012 |

Publisher | IEEE Institute of Electrical and Electronic Engineers |

Pages | 442-445 |

ISBN (Electronic) | 978-1-4577-1820-5 |

ISBN (Print) | 978-1-4577-1819-9, 978-1-4577-1821-2 |

DOIs | |

Publication status | Published - 2012 |

MoE publication type | Not Eligible |

Event | IEEE International Frequency Control Symposium, IFCS 2012 - Baltimore, United States Duration: 21 May 2012 → 24 May 2012 Conference number: 66 |

### Conference

Conference | IEEE International Frequency Control Symposium, IFCS 2012 |
---|---|

Abbreviated title | IFCS 2012 |

Country | United States |

City | Baltimore |

Period | 21/05/12 → 24/05/12 |

## Fingerprint Dive into the research topics of 'Bulk acoustic wave propagation characteristics in degenerately n-doped Si'. Together they form a unique fingerprint.

## Cite this

Pensala, T., Prunnila, M., & Jaakkola, A. (2012). Bulk acoustic wave propagation characteristics in degenerately n-doped Si. In

*Proceedings : International Frequency Control Symposium, IFCS 2012*(pp. 442-445). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/FCS.2012.6243713