Buried dopant and defect layers for device structures with high-energy ion implantation

Nathan Cheung, C. Liang, B. Liew, Risto Mutikainen, Hing Wong

Research output: Contribution to journalArticleScientific

43 Citations (Scopus)


Recent developments in the use of megavolt ion implantation for fabricating microelectronics structures are presented. Deep buried dopant implanted layers offer major advantages in: (1) processing simplicity, (2) low thermal budget, and (3) process flow flexibility for both CMOS and bipolar integrated circuits. Dopant profile design issues such as vertical and lateral straggles of high-energy implants are shown to be important for future scaling of device dimensions. The use of deep-buried defect layers created by high-energy implants (e.g. O and C) has many useful VLSI applications such as proximity gettering of impurities and localized minotiry-carrier lifetime control. Improved VLSI frabrication yield and monolithic integration of signal-processing and power-circuits are expected with these buried defects.
Original languageEnglish
Pages (from-to)941-950
JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - 1989
MoE publication typeB1 Article in a scientific magazine


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