C and L band 1×12 AWG based on 3-µm SOI platform with 100 GHz channel spacing and low polarization sensitivity

Yu Wang (Corresponding author), Bhat Srivathsa, Netsanet Tessema, Rafael Kraemer, Bitao Pan, Antonio Napoli, Giovanni Delrosso, Nicola Calabretta

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

C- and L-band polarization insensitive 1×12 AWG with 100GHz channel-spacing is fabricated on SOI. Results show <3.8dB loss, <-30dB crosstalk, <2.6dB polarization dependent loss, <0.1nm polarization dependent wavelength shift and <0.3dB BER penalty at 10Gbps.
Original languageEnglish
Title of host publicationCLEO: Science and Innovations 2021
Subtitle of host publicationConference on Lasers and Electro-Optics
PublisherOptical Society of America OSA
ISBN (Electronic)978-1-943580-91-0
ISBN (Print)978-1-6654-4792-8
DOIs
Publication statusPublished - 2021
MoE publication typeA4 Article in a conference publication
EventCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021: Online - Virtual, San Jose, United States
Duration: 9 May 202114 May 2021

Publication series

SeriesOptics InfoBase Conference Papers
SeriesQuantum Electronics and Laser Science
ISSN2160-8989

Conference

ConferenceCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021
Country/TerritoryUnited States
CitySan Jose
Period9/05/2114/05/21

Fingerprint

Dive into the research topics of 'C and L band 1×12 AWG based on 3-µm SOI platform with 100 GHz channel spacing and low polarization sensitivity'. Together they form a unique fingerprint.

Cite this