C and L band 1×12 AWG based on 3-µm SOI platform with 100 GHz channel spacing and low polarization sensitivity

Yu Wang*, Bhat Srivathsa, Netsanet Tessema, Rafael Kraemer, Bitao Pan, Antonio Napoli, Giovanni Delrosso, Nicola Calabretta

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

C- and L-band polarization insensitive 1×12 AWG with 100GHz channel-spacing is fabricated on SOI. Results show <3.8dB loss, <-30dB crosstalk, <2.6dB polarization dependent loss, <0.1nm polarization dependent wavelength shift and <0.3dB BER penalty at 10Gbps.
Original languageEnglish
Title of host publicationCLEO: Science and Innovations 2021
Subtitle of host publicationConference on Lasers and Electro-Optics
PublisherOptica Publishing Group
ISBN (Electronic)978-1-943580-91-0
ISBN (Print)978-1-6654-4792-8
DOIs
Publication statusPublished - 2021
MoE publication typeA4 Article in a conference publication
EventCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021: Online - Virtual, San Jose, United States
Duration: 9 May 202114 May 2021

Publication series

SeriesOptics InfoBase Conference Papers
ISSN2162-2701
SeriesOSA Technical Digest

Conference

ConferenceCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021
Country/TerritoryUnited States
CitySan Jose
Period9/05/2114/05/21

Funding

This project was partially funded from the European Union's Horizon 2020 research and innovation programme Marie Skłodowska-Curie (GA 814276), and partially from European Union's Horizon 2020 PASSION (GA 780326).

Fingerprint

Dive into the research topics of 'C and L band 1×12 AWG based on 3-µm SOI platform with 100 GHz channel spacing and low polarization sensitivity'. Together they form a unique fingerprint.

Cite this