Abstract
A capacitive single-chip silicon microphone with very low-stress polysilicon membrane was fabricated. A mechanism for stress-releasing due to the high stress of the perforated membrane was introduced. With the achieved stress level of 2 MPa, a microphone with the membrane area of 1 mm2 can be optimally designed, although the measured components did not show the optimal resolution due to excessive acoustic resistance. With a membrane area of 1 mm2, the acoustical sensitivity was 4 mV/Pa (at 1 kHz) and the noise equivalent sound level was 33.5 dB (A), which are adequate values for many applications. The packaged components were tested with a thermal cycle between -40 °C and +60 °C, and due to low packaging-related stresses, no buckling of the membranes was observed.
| Original language | English |
|---|---|
| Pages (from-to) | 116-123 |
| Journal | Sensors and Actuators A: Physical |
| Volume | 85 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 25 Aug 2000 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- capacitive
- microphone
- polysilicon
- stress
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Capacitive microphone with low-stress polysilicon membrane and high-stress polysilicon backplate. / Torkkeli, Altti; Rusanen, Outi; Saarilahti, Jaakko; Seppä, Heikki; Sipola, Hannu; Hietanen, Jarmo.
In: Sensors and Actuators A: Physical, Vol. 85, No. 1, 25.08.2000, p. 116-123.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Capacitive microphone with low-stress polysilicon membrane and high-stress polysilicon backplate
AU - Torkkeli, Altti
AU - Rusanen, Outi
AU - Saarilahti, Jaakko
AU - Seppä, Heikki
AU - Sipola, Hannu
AU - Hietanen, Jarmo
PY - 2000/8/25
Y1 - 2000/8/25
N2 - A capacitive single-chip silicon microphone with very low-stress polysilicon membrane was fabricated. A mechanism for stress-releasing due to the high stress of the perforated membrane was introduced. With the achieved stress level of 2 MPa, a microphone with the membrane area of 1 mm2 can be optimally designed, although the measured components did not show the optimal resolution due to excessive acoustic resistance. With a membrane area of 1 mm2, the acoustical sensitivity was 4 mV/Pa (at 1 kHz) and the noise equivalent sound level was 33.5 dB (A), which are adequate values for many applications. The packaged components were tested with a thermal cycle between -40 °C and +60 °C, and due to low packaging-related stresses, no buckling of the membranes was observed.
AB - A capacitive single-chip silicon microphone with very low-stress polysilicon membrane was fabricated. A mechanism for stress-releasing due to the high stress of the perforated membrane was introduced. With the achieved stress level of 2 MPa, a microphone with the membrane area of 1 mm2 can be optimally designed, although the measured components did not show the optimal resolution due to excessive acoustic resistance. With a membrane area of 1 mm2, the acoustical sensitivity was 4 mV/Pa (at 1 kHz) and the noise equivalent sound level was 33.5 dB (A), which are adequate values for many applications. The packaged components were tested with a thermal cycle between -40 °C and +60 °C, and due to low packaging-related stresses, no buckling of the membranes was observed.
KW - capacitive
KW - microphone
KW - polysilicon
KW - stress
UR - http://www.scopus.com/inward/record.url?scp=0034245591&partnerID=8YFLogxK
U2 - 10.1016/S0924-4247(00)00336-8
DO - 10.1016/S0924-4247(00)00336-8
M3 - Article
VL - 85
SP - 116
EP - 123
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
SN - 0924-4247
IS - 1
ER -