Capacitive RF MEMS power sensors

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Two novel RF MEMS power sensors operating up to 5 GHz and 45 GHz respectively have been designed. The lower frequency device is a coplanar transmission line with released ground sections. The rms voltage across the conductors causes the released ground lines to bend towards the signal line in the middle. This bending can be detected capacitively with a pair of sense electrodes. The higher frequency device extends a Si plate, which is metallized underneath, above a coplanar transmission line. The electrostatic force due to the rms voltage pulls the Si plate towards the transmission line, which can again be detected with a pair of sense electrodes. Microwave simulations indicate that input match better than -30 dB and transmission loss less than 0.2 dB up to 45 GHz can be achieved. For the 5 GHz design a power resolution of -39 dBm and -37 dBm for the 45 GHz design have been obtained by analysis. Measured results for the first generation 5 GHz device show input match better than -15 dB and transmission loss less than 0.7 dB. Measured results from the 45 GHz device do not exist yet.
    Original languageEnglish
    Title of host publicationProceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications
    Subtitle of host publicationCircuits, systems, and measurement techniques
    EditorsJ. Mallat, A. Räisänen, J. Tuovinen
    PublisherEuropean Space Agency (ESA)
    Pages503-508
    Publication statusPublished - 2003
    MoE publication typeA4 Article in a conference publication
    Event3rd ESA Workshop On Millimetre Wave Technology and Applications: Circuits, systems and measurement techniques - MilliLab, Espoo, Finland
    Duration: 21 May 200323 May 2003

    Publication series

    SeriesESA Conference Proceedings
    Volume212
    ISSN1022-6656

    Conference

    Conference3rd ESA Workshop On Millimetre Wave Technology and Applications
    CountryFinland
    CityEspoo
    Period21/05/0323/05/03

    Keywords

    • RF MEMS
    • power sensor

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