Carbon nanotube thin film transistors based on aerosol methods

Marina Y. Zavodchikova, Tero Kulmala, Albert Nasibulin, Vladimir Ermolov, Sami Franssila, Kestutis Grigorqas, Esko I. Kauppinen

Research output: Contribution to journalArticleScientificpeer-review

42 Citations (Scopus)

Abstract

We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V−1 s−1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.
Original languageEnglish
Article number085201
Number of pages9
JournalNanotechnology
Volume20
Issue number8
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

Carbon Nanotubes
Thin film transistors
Aerosols
Carbon nanotubes
Field effect transistors
Gates (transistor)
Substrates
Single-walled carbon nanotubes (SWCN)
Hysteresis
Transistors
Passivation
Chemical vapor deposition
Polymers
Heat treatment
Vacuum
Plastics
Fabrication
Catalysts
Temperature

Cite this

Zavodchikova, M. Y., Kulmala, T., Nasibulin, A., Ermolov, V., Franssila, S., Grigorqas, K., & Kauppinen, E. I. (2009). Carbon nanotube thin film transistors based on aerosol methods. Nanotechnology, 20(8), [085201]. https://doi.org/10.1088/0957-4484/20/8/085201
Zavodchikova, Marina Y. ; Kulmala, Tero ; Nasibulin, Albert ; Ermolov, Vladimir ; Franssila, Sami ; Grigorqas, Kestutis ; Kauppinen, Esko I. / Carbon nanotube thin film transistors based on aerosol methods. In: Nanotechnology. 2009 ; Vol. 20, No. 8.
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abstract = "We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V−1 s−1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.",
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Zavodchikova, MY, Kulmala, T, Nasibulin, A, Ermolov, V, Franssila, S, Grigorqas, K & Kauppinen, EI 2009, 'Carbon nanotube thin film transistors based on aerosol methods', Nanotechnology, vol. 20, no. 8, 085201. https://doi.org/10.1088/0957-4484/20/8/085201

Carbon nanotube thin film transistors based on aerosol methods. / Zavodchikova, Marina Y.; Kulmala, Tero; Nasibulin, Albert; Ermolov, Vladimir; Franssila, Sami; Grigorqas, Kestutis; Kauppinen, Esko I.

In: Nanotechnology, Vol. 20, No. 8, 085201, 2009.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Zavodchikova, Marina Y.

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AB - We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V−1 s−1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.

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Zavodchikova MY, Kulmala T, Nasibulin A, Ermolov V, Franssila S, Grigorqas K et al. Carbon nanotube thin film transistors based on aerosol methods. Nanotechnology. 2009;20(8). 085201. https://doi.org/10.1088/0957-4484/20/8/085201