Carbon nanotube thin film transistors based on aerosol methods

Marina Y. Zavodchikova, Tero Kulmala, Albert Nasibulin, Vladimir Ermolov, Sami Franssila, Kestutis Grigorqas, Esko I. Kauppinen

    Research output: Contribution to journalArticleScientificpeer-review

    42 Citations (Scopus)

    Abstract

    We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V−1 s−1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.
    Original languageEnglish
    Article number085201
    Number of pages9
    JournalNanotechnology
    Volume20
    Issue number8
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Carbon Nanotubes
    Thin film transistors
    Aerosols
    Carbon nanotubes
    Field effect transistors
    Gates (transistor)
    Substrates
    Single-walled carbon nanotubes (SWCN)
    Hysteresis
    Transistors
    Passivation
    Chemical vapor deposition
    Polymers
    Heat treatment
    Vacuum
    Plastics
    Fabrication
    Catalysts
    Temperature

    Cite this

    Zavodchikova, M. Y., Kulmala, T., Nasibulin, A., Ermolov, V., Franssila, S., Grigorqas, K., & Kauppinen, E. I. (2009). Carbon nanotube thin film transistors based on aerosol methods. Nanotechnology, 20(8), [085201]. https://doi.org/10.1088/0957-4484/20/8/085201
    Zavodchikova, Marina Y. ; Kulmala, Tero ; Nasibulin, Albert ; Ermolov, Vladimir ; Franssila, Sami ; Grigorqas, Kestutis ; Kauppinen, Esko I. / Carbon nanotube thin film transistors based on aerosol methods. In: Nanotechnology. 2009 ; Vol. 20, No. 8.
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    abstract = "We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V−1 s−1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.",
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    Zavodchikova, MY, Kulmala, T, Nasibulin, A, Ermolov, V, Franssila, S, Grigorqas, K & Kauppinen, EI 2009, 'Carbon nanotube thin film transistors based on aerosol methods', Nanotechnology, vol. 20, no. 8, 085201. https://doi.org/10.1088/0957-4484/20/8/085201

    Carbon nanotube thin film transistors based on aerosol methods. / Zavodchikova, Marina Y.; Kulmala, Tero; Nasibulin, Albert; Ermolov, Vladimir; Franssila, Sami; Grigorqas, Kestutis; Kauppinen, Esko I.

    In: Nanotechnology, Vol. 20, No. 8, 085201, 2009.

    Research output: Contribution to journalArticleScientificpeer-review

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    AU - Zavodchikova, Marina Y.

    AU - Kulmala, Tero

    AU - Nasibulin, Albert

    AU - Ermolov, Vladimir

    AU - Franssila, Sami

    AU - Grigorqas, Kestutis

    AU - Kauppinen, Esko I.

    PY - 2009

    Y1 - 2009

    N2 - We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V−1 s−1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.

    AB - We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V−1 s−1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.

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    Zavodchikova MY, Kulmala T, Nasibulin A, Ermolov V, Franssila S, Grigorqas K et al. Carbon nanotube thin film transistors based on aerosol methods. Nanotechnology. 2009;20(8). 085201. https://doi.org/10.1088/0957-4484/20/8/085201