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Carbon nanotube thin film transistors based on aerosol methods
Marina Y. Zavodchikova
, Tero Kulmala
, Albert Nasibulin
,
Vladimir Ermolov
, Sami Franssila
, Kestutis Grigorqas
, Esko I. Kauppinen
Helsinki University of Technology
Nokia Oyj
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
48
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Citations (Scopus)
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Keyphrases
Field-effect Transistors
100%
Carbon Nanotube Thin Film Transistors
100%
Aerosol Method
100%
Bottom Gate
66%
Hysteresis
66%
Carbon Nanotube Network
66%
Single-walled Carbon Nanotubes Networks
66%
Transistor
33%
Aerosol
33%
Plastic Substrate
33%
High Performance
33%
Field-effect Mobility
33%
Performance Fields
33%
Solution Process
33%
Thermal Treatment
33%
Si-SiO2
33%
Thin-film Transistors
33%
Room Temperature
33%
Fabrication Methods
33%
Substrate Material
33%
Al2O3 Layer
33%
Atomic Layer Deposited
33%
Polymer Substrate
33%
Transfer Characteristics
33%
Passivation
33%
SiO2 Substrate
33%
Al2O3 Film
33%
Synthesis Reactor
33%
Transistor Structure
33%
Floating Catalyst
33%
Catalyst Synthesis
33%
CVD-grown
33%
Scalable Deposition
33%
Density Control
33%
Transistor Performance
33%
Top-gate Transistors
33%
Intolerant
33%
Device Transfer
33%
INIS
substrates
100%
transistors
100%
thin films
100%
aerosols
100%
carbon nanotubes
100%
field effect transistors
60%
layers
40%
performance
40%
devices
40%
hysteresis
40%
solutions
20%
density
20%
polymers
20%
chemical vapor deposition
20%
plastics
20%
heat treatments
20%
deposition
20%
films
20%
heat
20%
reactors
20%
catalysts
20%
mobility
20%
randomness
20%
synthesis
20%
fabrication
20%
suppression
20%
temperature range 0273-0400 k
20%
passivation
20%
Engineering
Field-Effect Transistor
100%
Thin-Film Transistor
100%
Carbon Nanotubes
100%
Single-Walled Carbon Nanotube
66%
Heat Treatment
33%
Passivation
33%
Polymer Substrate
33%
Atomic Layer
33%
Fabrication Method
33%
Substrate Material
33%
Chemical Vapor Deposition
33%
Room Temperature
33%
Silicon Dioxide
33%
Material Science
Thin-Film Transistor
100%
Carbon Nanotubes
100%
Field Effect Transistors
60%
Transistor
40%
Aluminum Oxide
40%
Chemical Vapor Deposition
20%
Film
20%
Density
20%
Chemical Engineering
Carbon Nanotube
100%
Film
100%
Chemical Vapor Deposition
20%
Synthesis Reactor
20%