Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures

C. Lingk, W. Helfer, G. von Plessen, J. Feldmann, K. Stock, D. Feise, H. Citrin, Harri Lipsanen, Markku Sopanen, J. Tulkki, Jouni Ahopelto

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Abstract

We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.
Original languageEnglish
Pages (from-to)13588 - 13594
Number of pages7
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume62
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

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Semiconductor quantum dots
quantum dots
Semiconductor quantum wells
quantum wells
Photoluminescence spectroscopy
confining
gallium arsenide
photoluminescence
expansion
spectroscopy

Cite this

Lingk, C. ; Helfer, W. ; Plessen, G. von ; Feldmann, J. ; Stock, K. ; Feise, D. ; Citrin, H. ; Lipsanen, Harri ; Sopanen, Markku ; Tulkki, J. ; Ahopelto, Jouni. / Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures. In: Physical Review B: Condensed Matter and Materials Physics. 2000 ; Vol. 62. pp. 13588 - 13594.
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abstract = "We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.",
author = "C. Lingk and W. Helfer and Plessen, {G. von} and J. Feldmann and K. Stock and D. Feise and H. Citrin and Harri Lipsanen and Markku Sopanen and J. Tulkki and Jouni Ahopelto",
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Lingk, C, Helfer, W, Plessen, GV, Feldmann, J, Stock, K, Feise, D, Citrin, H, Lipsanen, H, Sopanen, M, Tulkki, J & Ahopelto, J 2000, 'Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures', Physical Review B: Condensed Matter and Materials Physics, vol. 62, pp. 13588 - 13594. https://doi.org/10.1103/PhysRevB.62.13588

Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures. / Lingk, C.; Helfer, W.; Plessen, G. von; Feldmann, J.; Stock, K.; Feise, D.; Citrin, H.; Lipsanen, Harri; Sopanen, Markku; Tulkki, J.; Ahopelto, Jouni.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 62, 2000, p. 13588 - 13594.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures

AU - Lingk, C.

AU - Helfer, W.

AU - Plessen, G. von

AU - Feldmann, J.

AU - Stock, K.

AU - Feise, D.

AU - Citrin, H.

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Tulkki, J.

AU - Ahopelto, Jouni

PY - 2000

Y1 - 2000

N2 - We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.

AB - We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.

U2 - 10.1103/PhysRevB.62.13588

DO - 10.1103/PhysRevB.62.13588

M3 - Article

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EP - 13594

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

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