Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures

C. Lingk, W. Helfer, G. von Plessen, J. Feldmann, K. Stock, D. Feise, H. Citrin, Harri Lipsanen, Markku Sopanen, J. Tulkki, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.
    Original languageEnglish
    Pages (from-to)13588 - 13594
    Number of pages7
    JournalPhysical Review B: Condensed Matter and Materials Physics
    Volume62
    DOIs
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

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    Semiconductor quantum dots
    quantum dots
    Semiconductor quantum wells
    quantum wells
    Photoluminescence spectroscopy
    confining
    gallium arsenide
    photoluminescence
    expansion
    spectroscopy

    Cite this

    Lingk, C. ; Helfer, W. ; Plessen, G. von ; Feldmann, J. ; Stock, K. ; Feise, D. ; Citrin, H. ; Lipsanen, Harri ; Sopanen, Markku ; Tulkki, J. ; Ahopelto, Jouni. / Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures. In: Physical Review B: Condensed Matter and Materials Physics. 2000 ; Vol. 62. pp. 13588 - 13594.
    @article{e88b6c4a1198465d97a156f5bef1af30,
    title = "Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures",
    abstract = "We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.",
    author = "C. Lingk and W. Helfer and Plessen, {G. von} and J. Feldmann and K. Stock and D. Feise and H. Citrin and Harri Lipsanen and Markku Sopanen and J. Tulkki and Jouni Ahopelto",
    year = "2000",
    doi = "10.1103/PhysRevB.62.13588",
    language = "English",
    volume = "62",
    pages = "13588 -- 13594",
    journal = "Physical Review B",
    issn = "2469-9950",
    publisher = "American Physical Society",

    }

    Lingk, C, Helfer, W, Plessen, GV, Feldmann, J, Stock, K, Feise, D, Citrin, H, Lipsanen, H, Sopanen, M, Tulkki, J & Ahopelto, J 2000, 'Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures', Physical Review B: Condensed Matter and Materials Physics, vol. 62, pp. 13588 - 13594. https://doi.org/10.1103/PhysRevB.62.13588

    Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures. / Lingk, C.; Helfer, W.; Plessen, G. von; Feldmann, J.; Stock, K.; Feise, D.; Citrin, H.; Lipsanen, Harri; Sopanen, Markku; Tulkki, J.; Ahopelto, Jouni.

    In: Physical Review B: Condensed Matter and Materials Physics, Vol. 62, 2000, p. 13588 - 13594.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures

    AU - Lingk, C.

    AU - Helfer, W.

    AU - Plessen, G. von

    AU - Feldmann, J.

    AU - Stock, K.

    AU - Feise, D.

    AU - Citrin, H.

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Tulkki, J.

    AU - Ahopelto, Jouni

    PY - 2000

    Y1 - 2000

    N2 - We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.

    AB - We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.

    U2 - 10.1103/PhysRevB.62.13588

    DO - 10.1103/PhysRevB.62.13588

    M3 - Article

    VL - 62

    SP - 13588

    EP - 13594

    JO - Physical Review B

    JF - Physical Review B

    SN - 2469-9950

    ER -