Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22<x<0.86) films by electrochemical capacitance/voltage technique

Y. Fedorenko, T. Jouhti, J. Konttinen, Jari Likonen, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n -type AlxGa1−xAs:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of AlxGa1−xAs, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.
Original languageUndefined
Pages (from-to)G380-G384
Number of pages5
JournalJournal of the Electrochemical Society
Volume150
Issue number7
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • aluminium compounds
  • gallium arsenide
  • III-V semiconductors
  • semiconductor heterojunctions
  • doping profiles
  • etching
  • surface topography
  • secondary ion mass spectra
  • mass spectroscopic chemical analysis
  • Hall effect
  • capacitance
  • electrochemical analysis
  • silicon
  • semiconductor epitaxial layers
  • carrier density

Cite this

@article{372ca1b1879b4edca794a56869e342e3,
title = "Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22<x<0.86) films by electrochemical capacitance/voltage technique",
abstract = "We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n -type AlxGa1−xAs:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of AlxGa1−xAs, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.",
keywords = "aluminium compounds, gallium arsenide, III-V semiconductors, semiconductor heterojunctions, doping profiles, etching, surface topography, secondary ion mass spectra, mass spectroscopic chemical analysis, Hall effect, capacitance, electrochemical analysis, silicon, semiconductor epitaxial layers, carrier density",
author = "Y. Fedorenko and T. Jouhti and J. Konttinen and Jari Likonen and M. Pessa",
year = "2003",
doi = "10.1149/1.1576226",
language = "Undefined",
volume = "150",
pages = "G380--G384",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
number = "7",

}

Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22<x<0.86) films by electrochemical capacitance/voltage technique. / Fedorenko, Y.; Jouhti, T.; Konttinen, J.; Likonen, Jari; Pessa, M.

In: Journal of the Electrochemical Society, Vol. 150, No. 7, 2003, p. G380-G384.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22<x<0.86) films by electrochemical capacitance/voltage technique

AU - Fedorenko, Y.

AU - Jouhti, T.

AU - Konttinen, J.

AU - Likonen, Jari

AU - Pessa, M.

PY - 2003

Y1 - 2003

N2 - We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n -type AlxGa1−xAs:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of AlxGa1−xAs, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.

AB - We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n -type AlxGa1−xAs:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of AlxGa1−xAs, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.

KW - aluminium compounds

KW - gallium arsenide

KW - III-V semiconductors

KW - semiconductor heterojunctions

KW - doping profiles

KW - etching

KW - surface topography

KW - secondary ion mass spectra

KW - mass spectroscopic chemical analysis

KW - Hall effect

KW - capacitance

KW - electrochemical analysis

KW - silicon

KW - semiconductor epitaxial layers

KW - carrier density

U2 - 10.1149/1.1576226

DO - 10.1149/1.1576226

M3 - Article

VL - 150

SP - G380-G384

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 7

ER -