Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22<x<0.86) films by electrochemical capacitance/voltage technique

Y. Fedorenko; T. Jouhti; J. Konttinen; Jari Likonen; M. Pessa

doi:10.1149/1.1576226

Carrier profiling and crystal quality evaluation of thin Al_xGa_1-xAs (0.22<x<0.86) films by electrochemical capacitance/voltage technique

Y. Fedorenko, T. Jouhti, J. Konttinen, Jari Likonen, M. Pessa

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n -type Al_xGa_1−xAs:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of Al_xGa_1−xAs, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.

Original language	English
Pages (from-to)	G380-G384
Journal	Journal of the Electrochemical Society
Volume	150
Issue number	7
DOIs	https://doi.org/10.1149/1.1576226
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

Keywords

aluminium compounds
gallium arsenide
III-V semiconductors
semiconductor heterojunctions
doping profiles
etching
surface topography
secondary ion mass spectra
mass spectroscopic chemical analysis
Hall effect
capacitance
electrochemical analysis
silicon
semiconductor epitaxial layers
carrier density

Access to Document

10.1149/1.1576226

Cite this

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title = "Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22<x<0.86) films by electrochemical capacitance/voltage technique",

abstract = "We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n -type AlxGa1−xAs:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of AlxGa1−xAs, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.",

keywords = "aluminium compounds, gallium arsenide, III-V semiconductors, semiconductor heterojunctions, doping profiles, etching, surface topography, secondary ion mass spectra, mass spectroscopic chemical analysis, Hall effect, capacitance, electrochemical analysis, silicon, semiconductor epitaxial layers, carrier density",

author = "Y. Fedorenko and T. Jouhti and J. Konttinen and Jari Likonen and M. Pessa",

year = "2003",

doi = "10.1149/1.1576226",

language = "English",

volume = "150",

pages = "G380--G384",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society ECS",

number = "7",

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TY - JOUR

T1 - Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22<x<0.86) films by electrochemical capacitance/voltage technique

AU - Fedorenko, Y.

AU - Jouhti, T.

AU - Konttinen, J.

AU - Likonen, Jari

AU - Pessa, M.

PY - 2003

Y1 - 2003

N2 - We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n -type AlxGa1−xAs:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of AlxGa1−xAs, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.

AB - We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n -type AlxGa1−xAs:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of AlxGa1−xAs, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.

KW - aluminium compounds

KW - gallium arsenide

KW - III-V semiconductors

KW - semiconductor heterojunctions

KW - doping profiles

KW - etching

KW - surface topography

KW - secondary ion mass spectra

KW - mass spectroscopic chemical analysis

KW - Hall effect

KW - capacitance

KW - electrochemical analysis

KW - silicon

KW - semiconductor epitaxial layers

KW - carrier density

U2 - 10.1149/1.1576226

DO - 10.1149/1.1576226

M3 - Article

SN - 0013-4651

VL - 150

SP - G380-G384

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 7