Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22<x<0.86) films by electrochemical capacitance/voltage technique

Y. Fedorenko, T. Jouhti, J. Konttinen, Jari Likonen, M. Pessa

    Research output: Contribution to journalArticleScientificpeer-review


    We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n -type AlxGa1−xAs:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of AlxGa1−xAs, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.
    Original languageEnglish
    Pages (from-to)G380-G384
    JournalJournal of the Electrochemical Society
    Issue number7
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed


    • aluminium compounds
    • gallium arsenide
    • III-V semiconductors
    • semiconductor heterojunctions
    • doping profiles
    • etching
    • surface topography
    • secondary ion mass spectra
    • mass spectroscopic chemical analysis
    • Hall effect
    • capacitance
    • electrochemical analysis
    • silicon
    • semiconductor epitaxial layers
    • carrier density


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