Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects

S. Grosse; J. Sandmann; G. von Plessen; J. Feldman; Harri Lipsanen; Markku Sopanen; J. Tulkki; Jouni Ahopelto

doi:10.1103/PhysRevB.55.4473

Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects

S. Grosse, J. Sandmann, G. von Plessen, J. Feldman, Harri Lipsanen, Markku Sopanen, J. Tulkki, Jouni Ahopelto

Research output: Contribution to journal › Article › Scientific › peer-review

119 Citations (Scopus)

Abstract

Stressor-induced In_xGa_1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering.

Original language	English
Pages (from-to)	4473-4476
Number of pages	4
Journal	Physical Review B: Condensed Matter
Volume	55
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.55.4473
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

Access to Document

10.1103/PhysRevB.55.4473

Fingerprint Dive into the research topics of 'Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects'. Together they form a unique fingerprint.

Cite this

@article{dc79cbe9a4474af89e3a04aeff00a348,

title = "Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects",

abstract = "Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. ",

author = "S. Grosse and J. Sandmann and {von Plessen}, G. and J. Feldman and Harri Lipsanen and Markku Sopanen and J. Tulkki and Jouni Ahopelto",

year = "1996",

doi = "10.1103/PhysRevB.55.4473",

language = "English",

volume = "55",

pages = "4473--4476",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society (APS)",

number = "7",

}

Carrier relaxation dynamics in quantum dots : Scattering mechanisms and state-filling effects. / Grosse, S.; Sandmann, J.; von Plessen, G.; Feldman, J.; Lipsanen, Harri; Sopanen, Markku; Tulkki, J.; Ahopelto, Jouni.

In: Physical Review B: Condensed Matter, Vol. 55, No. 7, 1996, p. 4473-4476.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Carrier relaxation dynamics in quantum dots

T2 - Scattering mechanisms and state-filling effects

AU - Grosse, S.

AU - Sandmann, J.

AU - von Plessen, G.

AU - Feldman, J.

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Tulkki, J.

AU - Ahopelto, Jouni

PY - 1996

Y1 - 1996

N2 - Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering.

AB - Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering.

U2 - 10.1103/PhysRevB.55.4473

DO - 10.1103/PhysRevB.55.4473

M3 - Article

VL - 55

SP - 4473

EP - 4476

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 7

ER -