Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects

S. Grosse; J. Sandmann; G. von Plessen; J. Feldman; Harri Lipsanen; Markku Sopanen; J. Tulkki; Jouni Ahopelto

doi:10.1103/PhysRevB.55.4473

Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects

S. Grosse, J. Sandmann, G. von Plessen, J. Feldman, Harri Lipsanen, Markku Sopanen, J. Tulkki, Jouni Ahopelto

Research output: Contribution to journal › Article › Scientific › peer-review

118 Citations (Scopus)

Abstract

Stressor-induced In_xGa_1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering.

Original language	English
Pages (from-to)	4473-4476
Number of pages	4
Journal	Physical Review B: Condensed Matter
Volume	55
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.55.4473
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

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Grosse, S., Sandmann, J., Plessen, G. V., Feldman, J., Lipsanen, H., Sopanen, M., Tulkki, J., & Ahopelto, J. (1996). Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects. Physical Review B: Condensed Matter, 55(7), 4473-4476. https://doi.org/10.1103/PhysRevB.55.4473

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abstract = "Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. ",

author = "S. Grosse and J. Sandmann and Plessen, {G. von} and J. Feldman and Harri Lipsanen and Markku Sopanen and J. Tulkki and Jouni Ahopelto",

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doi = "10.1103/PhysRevB.55.4473",

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Carrier relaxation dynamics in quantum dots : Scattering mechanisms and state-filling effects. / Grosse, S.; Sandmann, J.; Plessen, G. von; Feldman, J.; Lipsanen, Harri; Sopanen, Markku; Tulkki, J.; Ahopelto, Jouni.

In: Physical Review B: Condensed Matter, Vol. 55, No. 7, 1996, p. 4473-4476.

Research output: Contribution to journal › Article › Scientific › peer-review

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AU - Sopanen, Markku

AU - Tulkki, J.

AU - Ahopelto, Jouni

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AB - Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering.

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