Abstract
Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering.
Original language | English |
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Pages (from-to) | 4473-4476 |
Number of pages | 4 |
Journal | Physical Review B: Condensed Matter |
Volume | 55 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1996 |
MoE publication type | A1 Journal article-refereed |