Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects

S. Grosse, J. Sandmann, G. von Plessen, J. Feldman, Harri Lipsanen, Markku Sopanen, J. Tulkki, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. 
Original languageEnglish
Pages (from-to)4473-4476
Number of pages4
JournalPhysical Review B: Condensed Matter
Volume55
Issue number7
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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Phonon scattering
Semiconductor quantum dots
Acoustics
quantum dots
Scattering
scattering
Photoluminescence
acoustics
photoluminescence
electronics

Cite this

Grosse, S. ; Sandmann, J. ; Plessen, G. von ; Feldman, J. ; Lipsanen, Harri ; Sopanen, Markku ; Tulkki, J. ; Ahopelto, Jouni. / Carrier relaxation dynamics in quantum dots : Scattering mechanisms and state-filling effects. In: Physical Review B: Condensed Matter. 1996 ; Vol. 55, No. 7. pp. 4473-4476.
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abstract = "Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. ",
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Grosse, S, Sandmann, J, Plessen, GV, Feldman, J, Lipsanen, H, Sopanen, M, Tulkki, J & Ahopelto, J 1996, 'Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects', Physical Review B: Condensed Matter, vol. 55, no. 7, pp. 4473-4476. https://doi.org/10.1103/PhysRevB.55.4473

Carrier relaxation dynamics in quantum dots : Scattering mechanisms and state-filling effects. / Grosse, S.; Sandmann, J.; Plessen, G. von; Feldman, J.; Lipsanen, Harri; Sopanen, Markku; Tulkki, J.; Ahopelto, Jouni.

In: Physical Review B: Condensed Matter, Vol. 55, No. 7, 1996, p. 4473-4476.

Research output: Contribution to journalArticleScientificpeer-review

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T2 - Scattering mechanisms and state-filling effects

AU - Grosse, S.

AU - Sandmann, J.

AU - Plessen, G. von

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AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Tulkki, J.

AU - Ahopelto, Jouni

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AB - Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. 

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DO - 10.1103/PhysRevB.55.4473

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