Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects

S. Grosse, J. Sandmann, G. von Plessen, J. Feldman, Harri Lipsanen, Markku Sopanen, J. Tulkki, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

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    Abstract

    Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. 
    Original languageEnglish
    Pages (from-to)4473-4476
    Number of pages4
    JournalPhysical Review B: Condensed Matter
    Volume55
    Issue number7
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

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    Phonon scattering
    Semiconductor quantum dots
    Acoustics
    quantum dots
    Scattering
    scattering
    Photoluminescence
    acoustics
    photoluminescence
    electronics

    Cite this

    Grosse, S. ; Sandmann, J. ; Plessen, G. von ; Feldman, J. ; Lipsanen, Harri ; Sopanen, Markku ; Tulkki, J. ; Ahopelto, Jouni. / Carrier relaxation dynamics in quantum dots : Scattering mechanisms and state-filling effects. In: Physical Review B: Condensed Matter. 1996 ; Vol. 55, No. 7. pp. 4473-4476.
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    title = "Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects",
    abstract = "Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. ",
    author = "S. Grosse and J. Sandmann and Plessen, {G. von} and J. Feldman and Harri Lipsanen and Markku Sopanen and J. Tulkki and Jouni Ahopelto",
    year = "1996",
    doi = "10.1103/PhysRevB.55.4473",
    language = "English",
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    pages = "4473--4476",
    journal = "Physical Review B",
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    Grosse, S, Sandmann, J, Plessen, GV, Feldman, J, Lipsanen, H, Sopanen, M, Tulkki, J & Ahopelto, J 1996, 'Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects', Physical Review B: Condensed Matter, vol. 55, no. 7, pp. 4473-4476. https://doi.org/10.1103/PhysRevB.55.4473

    Carrier relaxation dynamics in quantum dots : Scattering mechanisms and state-filling effects. / Grosse, S.; Sandmann, J.; Plessen, G. von; Feldman, J.; Lipsanen, Harri; Sopanen, Markku; Tulkki, J.; Ahopelto, Jouni.

    In: Physical Review B: Condensed Matter, Vol. 55, No. 7, 1996, p. 4473-4476.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Carrier relaxation dynamics in quantum dots

    T2 - Scattering mechanisms and state-filling effects

    AU - Grosse, S.

    AU - Sandmann, J.

    AU - Plessen, G. von

    AU - Feldman, J.

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Tulkki, J.

    AU - Ahopelto, Jouni

    PY - 1996

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    N2 - Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. 

    AB - Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. 

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    DO - 10.1103/PhysRevB.55.4473

    M3 - Article

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    SP - 4473

    EP - 4476

    JO - Physical Review B

    JF - Physical Review B

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