Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects

S. Grosse, J. Sandmann, G. von Plessen, J. Feldman, Harri Lipsanen, Markku Sopanen, J. Tulkki, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    118 Citations (Scopus)

    Abstract

    Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering. 
    Original languageEnglish
    Pages (from-to)4473-4476
    Number of pages4
    JournalPhysical Review B: Condensed Matter
    Volume55
    Issue number7
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

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  • Cite this

    Grosse, S., Sandmann, J., Plessen, G. V., Feldman, J., Lipsanen, H., Sopanen, M., Tulkki, J., & Ahopelto, J. (1996). Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects. Physical Review B: Condensed Matter, 55(7), 4473-4476. https://doi.org/10.1103/PhysRevB.55.4473