Carrier relaxation in (GaIn)As quantum dots

J. Sandmann (Corresponding Author), S. Grosse, G. von Plessen, J. Feldmann, G. Hayes, R. Phillips, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)

    Abstract

    Time‐resolved photoluminescence experiments are performed to study carrier relaxation in strain‐induced (GaIn)As quantum dot structures. We observe a sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot electron–hole transition after optical excitation of higher‐energetic barrier states. This shows that carrier capture into the quantum‐dot ground state can be extremely fast at high electron–hole densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the decay of the photoluminescence transients.

    Original languageEnglish
    Pages (from-to)421 - 425
    Number of pages5
    JournalPhysica Status Solidi A: Applied Research
    Volume164
    Issue number1
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Semiconductor quantum dots
    Photoluminescence
    quantum dots
    photoluminescence
    Photoexcitation
    optical transition
    Relaxation time
    Ground state
    relaxation time
    life (durability)
    ground state
    decay
    excitation
    Experiments

    Cite this

    Sandmann, J. ; Grosse, S. ; Plessen, G. von ; Feldmann, J. ; Hayes, G. ; Phillips, R. ; Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni. / Carrier relaxation in (GaIn)As quantum dots. In: Physica Status Solidi A: Applied Research. 1997 ; Vol. 164, No. 1. pp. 421 - 425.
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    title = "Carrier relaxation in (GaIn)As quantum dots",
    abstract = "Time‐resolved photoluminescence experiments are performed to study carrier relaxation in strain‐induced (GaIn)As quantum dot structures. We observe a sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot electron–hole transition after optical excitation of higher‐energetic barrier states. This shows that carrier capture into the quantum‐dot ground state can be extremely fast at high electron–hole densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the decay of the photoluminescence transients.",
    author = "J. Sandmann and S. Grosse and Plessen, {G. von} and J. Feldmann and G. Hayes and R. Phillips and Harri Lipsanen and Markku Sopanen and Jouni Ahopelto",
    year = "1997",
    doi = "10.1002/1521-396X(199711)164:1<421::AID-PSSA421>3.0.CO;2-C",
    language = "English",
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    Sandmann, J, Grosse, S, Plessen, GV, Feldmann, J, Hayes, G, Phillips, R, Lipsanen, H, Sopanen, M & Ahopelto, J 1997, 'Carrier relaxation in (GaIn)As quantum dots', Physica Status Solidi A: Applied Research, vol. 164, no. 1, pp. 421 - 425. https://doi.org/10.1002/1521-396X(199711)164:1<421::AID-PSSA421>3.0.CO;2-C

    Carrier relaxation in (GaIn)As quantum dots. / Sandmann, J. (Corresponding Author); Grosse, S.; Plessen, G. von; Feldmann, J.; Hayes, G.; Phillips, R.; Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

    In: Physica Status Solidi A: Applied Research, Vol. 164, No. 1, 1997, p. 421 - 425.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Carrier relaxation in (GaIn)As quantum dots

    AU - Sandmann, J.

    AU - Grosse, S.

    AU - Plessen, G. von

    AU - Feldmann, J.

    AU - Hayes, G.

    AU - Phillips, R.

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Ahopelto, Jouni

    PY - 1997

    Y1 - 1997

    N2 - Time‐resolved photoluminescence experiments are performed to study carrier relaxation in strain‐induced (GaIn)As quantum dot structures. We observe a sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot electron–hole transition after optical excitation of higher‐energetic barrier states. This shows that carrier capture into the quantum‐dot ground state can be extremely fast at high electron–hole densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the decay of the photoluminescence transients.

    AB - Time‐resolved photoluminescence experiments are performed to study carrier relaxation in strain‐induced (GaIn)As quantum dot structures. We observe a sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot electron–hole transition after optical excitation of higher‐energetic barrier states. This shows that carrier capture into the quantum‐dot ground state can be extremely fast at high electron–hole densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the decay of the photoluminescence transients.

    U2 - 10.1002/1521-396X(199711)164:1<421::AID-PSSA421>3.0.CO;2-C

    DO - 10.1002/1521-396X(199711)164:1<421::AID-PSSA421>3.0.CO;2-C

    M3 - Article

    VL - 164

    SP - 421

    EP - 425

    JO - Physica Status Solidi A: Applications and Materials Science

    JF - Physica Status Solidi A: Applications and Materials Science

    SN - 1862-6300

    IS - 1

    ER -