Carrier relaxation in (GaIn)As quantum dots

J. Sandmann (Corresponding Author), S. Grosse, G. von Plessen, J. Feldmann, G. Hayes, R. Phillips, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)

    Abstract

    Time‐resolved photoluminescence experiments are performed to study carrier relaxation in strain‐induced (GaIn)As quantum dot structures. We observe a sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot electron–hole transition after optical excitation of higher‐energetic barrier states. This shows that carrier capture into the quantum‐dot ground state can be extremely fast at high electron–hole densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the decay of the photoluminescence transients.

    Original languageEnglish
    Pages (from-to)421 - 425
    Number of pages5
    JournalPhysica Status Solidi A: Applied Research
    Volume164
    Issue number1
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

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