Carrier relaxation in (GaIn)As quantum dots

J. Sandmann (Corresponding Author), S. Grosse, G. von Plessen, J. Feldmann, G. Hayes, R. Phillips, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Time‐resolved photoluminescence experiments are performed to study carrier relaxation in strain‐induced (GaIn)As quantum dot structures. We observe a sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot electron–hole transition after optical excitation of higher‐energetic barrier states. This shows that carrier capture into the quantum‐dot ground state can be extremely fast at high electron–hole densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the decay of the photoluminescence transients.

Original languageEnglish
Pages (from-to)421 - 425
Number of pages5
JournalPhysica Status Solidi A: Applied Research
Volume164
Issue number1
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

Fingerprint

Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
Photoexcitation
optical transition
Relaxation time
Ground state
relaxation time
life (durability)
ground state
decay
excitation
Experiments

Cite this

Sandmann, J. ; Grosse, S. ; Plessen, G. von ; Feldmann, J. ; Hayes, G. ; Phillips, R. ; Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni. / Carrier relaxation in (GaIn)As quantum dots. In: Physica Status Solidi A: Applied Research. 1997 ; Vol. 164, No. 1. pp. 421 - 425.
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abstract = "Time‐resolved photoluminescence experiments are performed to study carrier relaxation in strain‐induced (GaIn)As quantum dot structures. We observe a sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot electron–hole transition after optical excitation of higher‐energetic barrier states. This shows that carrier capture into the quantum‐dot ground state can be extremely fast at high electron–hole densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the decay of the photoluminescence transients.",
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Sandmann, J, Grosse, S, Plessen, GV, Feldmann, J, Hayes, G, Phillips, R, Lipsanen, H, Sopanen, M & Ahopelto, J 1997, 'Carrier relaxation in (GaIn)As quantum dots', Physica Status Solidi A: Applied Research, vol. 164, no. 1, pp. 421 - 425. https://doi.org/10.1002/1521-396X(199711)164:1<421::AID-PSSA421>3.0.CO;2-C

Carrier relaxation in (GaIn)As quantum dots. / Sandmann, J. (Corresponding Author); Grosse, S.; Plessen, G. von; Feldmann, J.; Hayes, G.; Phillips, R.; Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

In: Physica Status Solidi A: Applied Research, Vol. 164, No. 1, 1997, p. 421 - 425.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Carrier relaxation in (GaIn)As quantum dots

AU - Sandmann, J.

AU - Grosse, S.

AU - Plessen, G. von

AU - Feldmann, J.

AU - Hayes, G.

AU - Phillips, R.

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

PY - 1997

Y1 - 1997

N2 - Time‐resolved photoluminescence experiments are performed to study carrier relaxation in strain‐induced (GaIn)As quantum dot structures. We observe a sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot electron–hole transition after optical excitation of higher‐energetic barrier states. This shows that carrier capture into the quantum‐dot ground state can be extremely fast at high electron–hole densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the decay of the photoluminescence transients.

AB - Time‐resolved photoluminescence experiments are performed to study carrier relaxation in strain‐induced (GaIn)As quantum dot structures. We observe a sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot electron–hole transition after optical excitation of higher‐energetic barrier states. This shows that carrier capture into the quantum‐dot ground state can be extremely fast at high electron–hole densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the decay of the photoluminescence transients.

U2 - 10.1002/1521-396X(199711)164:1<421::AID-PSSA421>3.0.CO;2-C

DO - 10.1002/1521-396X(199711)164:1<421::AID-PSSA421>3.0.CO;2-C

M3 - Article

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SP - 421

EP - 425

JO - Physica Status Solidi A: Applications and Materials Science

JF - Physica Status Solidi A: Applications and Materials Science

SN - 1862-6300

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