Catalyst-free growth of In(As)P nanowires on silicon

M. Mattila, T. Hakkarainen, H. Lipsanen, Hua Jiang, Esko I. Kauppinen

Research output: Contribution to journalArticleScientificpeer-review

84 Citations (Scopus)

Abstract

The catalyst-free metal organic vapor phase epitaxial growth of In(As)P nanowires on silicon substrates is investigated using in situ deposited In droplets as seeds for nanowire growth. The thin substrate native oxide is found to play a crucial role in the nanowire formation. The structure of the nanowires is characterized by photoluminescence and electron microscopy measurements. The crystal structure of the InP nanowires is wurtzite with its c axis perpendicular to the nanowire axis. Adding arsenic precursor to the gas phase during growth results in a bimodal photoluminescence spectrum exhibiting peak at the InAsP and InP band gap energies.
Original languageEnglish
Article number063119
JournalApplied Physics Letters
Volume89
Issue number6
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Fingerprint

nanowires
catalysts
silicon
vapor phases
photoluminescence
arsenic
wurtzite
seeds
electron microscopy
microscopy
crystal structure
oxides
metals

Keywords

  • indium
  • indium compounds
  • arsenic compounds
  • MOCVD
  • vapour phase epitaxial growth
  • nanowires
  • semiconductor quantum wires
  • photoluminescence
  • electron microscopy
  • energy gap

Cite this

Mattila, M., Hakkarainen, T., Lipsanen, H., Jiang, H., & Kauppinen, E. I. (2006). Catalyst-free growth of In(As)P nanowires on silicon. Applied Physics Letters, 89(6), [063119]. https://doi.org/10.1063/1.2336599
Mattila, M. ; Hakkarainen, T. ; Lipsanen, H. ; Jiang, Hua ; Kauppinen, Esko I. / Catalyst-free growth of In(As)P nanowires on silicon. In: Applied Physics Letters. 2006 ; Vol. 89, No. 6.
@article{ec468cf270c34980a02d858e6854e1c3,
title = "Catalyst-free growth of In(As)P nanowires on silicon",
abstract = "The catalyst-free metal organic vapor phase epitaxial growth of In(As)P nanowires on silicon substrates is investigated using in situ deposited In droplets as seeds for nanowire growth. The thin substrate native oxide is found to play a crucial role in the nanowire formation. The structure of the nanowires is characterized by photoluminescence and electron microscopy measurements. The crystal structure of the InP nanowires is wurtzite with its c axis perpendicular to the nanowire axis. Adding arsenic precursor to the gas phase during growth results in a bimodal photoluminescence spectrum exhibiting peak at the InAsP and InP band gap energies.",
keywords = "indium, indium compounds, arsenic compounds, MOCVD, vapour phase epitaxial growth, nanowires, semiconductor quantum wires, photoluminescence, electron microscopy, energy gap",
author = "M. Mattila and T. Hakkarainen and H. Lipsanen and Hua Jiang and Kauppinen, {Esko I.}",
year = "2006",
doi = "10.1063/1.2336599",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "6",

}

Mattila, M, Hakkarainen, T, Lipsanen, H, Jiang, H & Kauppinen, EI 2006, 'Catalyst-free growth of In(As)P nanowires on silicon', Applied Physics Letters, vol. 89, no. 6, 063119. https://doi.org/10.1063/1.2336599

Catalyst-free growth of In(As)P nanowires on silicon. / Mattila, M.; Hakkarainen, T.; Lipsanen, H.; Jiang, Hua; Kauppinen, Esko I.

In: Applied Physics Letters, Vol. 89, No. 6, 063119, 2006.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Catalyst-free growth of In(As)P nanowires on silicon

AU - Mattila, M.

AU - Hakkarainen, T.

AU - Lipsanen, H.

AU - Jiang, Hua

AU - Kauppinen, Esko I.

PY - 2006

Y1 - 2006

N2 - The catalyst-free metal organic vapor phase epitaxial growth of In(As)P nanowires on silicon substrates is investigated using in situ deposited In droplets as seeds for nanowire growth. The thin substrate native oxide is found to play a crucial role in the nanowire formation. The structure of the nanowires is characterized by photoluminescence and electron microscopy measurements. The crystal structure of the InP nanowires is wurtzite with its c axis perpendicular to the nanowire axis. Adding arsenic precursor to the gas phase during growth results in a bimodal photoluminescence spectrum exhibiting peak at the InAsP and InP band gap energies.

AB - The catalyst-free metal organic vapor phase epitaxial growth of In(As)P nanowires on silicon substrates is investigated using in situ deposited In droplets as seeds for nanowire growth. The thin substrate native oxide is found to play a crucial role in the nanowire formation. The structure of the nanowires is characterized by photoluminescence and electron microscopy measurements. The crystal structure of the InP nanowires is wurtzite with its c axis perpendicular to the nanowire axis. Adding arsenic precursor to the gas phase during growth results in a bimodal photoluminescence spectrum exhibiting peak at the InAsP and InP band gap energies.

KW - indium

KW - indium compounds

KW - arsenic compounds

KW - MOCVD

KW - vapour phase epitaxial growth

KW - nanowires

KW - semiconductor quantum wires

KW - photoluminescence

KW - electron microscopy

KW - energy gap

U2 - 10.1063/1.2336599

DO - 10.1063/1.2336599

M3 - Article

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 063119

ER -

Mattila M, Hakkarainen T, Lipsanen H, Jiang H, Kauppinen EI. Catalyst-free growth of In(As)P nanowires on silicon. Applied Physics Letters. 2006;89(6). 063119. https://doi.org/10.1063/1.2336599