Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

R. Bates, A. Blue, M. Christophersen, L. Eklund, S. Ely, V. Fadeyev, E. Gimenez, V. Kachkanov, Juha Kalliopuska, A. Macchiolo, D. Maneuski, B.F. Phlips, F.-W. Sadrozinski, G. Stewart, N. Tartoni, R.M. Zain

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

Reduced edge or "edgeless" detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.
Original languageEnglish
Article numberP01018
Number of pages12
JournalJournal of Instrumentation
Volume8
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon detectors
Strip
strip
Silicon
Pixel
Pixels
Detector
X rays
detectors
silicon
Sensor
pixels
Particle Physics
Detectors
Charge
Elections
x rays
High energy physics
Sensors
Synchrotrons

Keywords

  • Pixelated detectors and associated VLSI electronics
  • Hybrid detectors
  • Instrumentation for particle accelerators and storage rings - high energy (linear accelerators, synchrotrons)
  • Instrumentation for FEL

Cite this

Bates, R. ; Blue, A. ; Christophersen, M. ; Eklund, L. ; Ely, S. ; Fadeyev, V. ; Gimenez, E. ; Kachkanov, V. ; Kalliopuska, Juha ; Macchiolo, A. ; Maneuski, D. ; Phlips, B.F. ; Sadrozinski, F.-W. ; Stewart, G. ; Tartoni, N. ; Zain, R.M. / Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam. In: Journal of Instrumentation. 2013 ; Vol. 8.
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title = "Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam",
abstract = "Reduced edge or {"}edgeless{"} detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5{\%} in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.",
keywords = "Pixelated detectors and associated VLSI electronics, Hybrid detectors, Instrumentation for particle accelerators and storage rings - high energy (linear accelerators, synchrotrons), Instrumentation for FEL",
author = "R. Bates and A. Blue and M. Christophersen and L. Eklund and S. Ely and V. Fadeyev and E. Gimenez and V. Kachkanov and Juha Kalliopuska and A. Macchiolo and D. Maneuski and B.F. Phlips and F.-W. Sadrozinski and G. Stewart and N. Tartoni and R.M. Zain",
year = "2013",
doi = "10.1088/1748-0221/8/01/P01018",
language = "English",
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Bates, R, Blue, A, Christophersen, M, Eklund, L, Ely, S, Fadeyev, V, Gimenez, E, Kachkanov, V, Kalliopuska, J, Macchiolo, A, Maneuski, D, Phlips, BF, Sadrozinski, F-W, Stewart, G, Tartoni, N & Zain, RM 2013, 'Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam', Journal of Instrumentation, vol. 8, P01018. https://doi.org/10.1088/1748-0221/8/01/P01018

Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam. / Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, Juha; Macchiolo, A.; Maneuski, D.; Phlips, B.F.; Sadrozinski, F.-W.; Stewart, G.; Tartoni, N.; Zain, R.M.

In: Journal of Instrumentation, Vol. 8, P01018, 2013.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

AU - Bates, R.

AU - Blue, A.

AU - Christophersen, M.

AU - Eklund, L.

AU - Ely, S.

AU - Fadeyev, V.

AU - Gimenez, E.

AU - Kachkanov, V.

AU - Kalliopuska, Juha

AU - Macchiolo, A.

AU - Maneuski, D.

AU - Phlips, B.F.

AU - Sadrozinski, F.-W.

AU - Stewart, G.

AU - Tartoni, N.

AU - Zain, R.M.

PY - 2013

Y1 - 2013

N2 - Reduced edge or "edgeless" detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

AB - Reduced edge or "edgeless" detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

KW - Pixelated detectors and associated VLSI electronics

KW - Hybrid detectors

KW - Instrumentation for particle accelerators and storage rings - high energy (linear accelerators, synchrotrons)

KW - Instrumentation for FEL

U2 - 10.1088/1748-0221/8/01/P01018

DO - 10.1088/1748-0221/8/01/P01018

M3 - Article

VL - 8

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

M1 - P01018

ER -