Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

Matteo Centis Vignali; Thomas Eichhorn; Eija Tuominen; Esa Tuovinen; Tracker Group of the CMS Collaboration

doi:10.1140/epjc/s10052-017-5115-z

Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

Matteo Centis Vignali^*, Thomas Eichhorn^*, Eija Tuominen, Esa Tuovinen, Tracker Group of the CMS Collaboration

^*Corresponding author for this work

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment’s silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Φ_e_q= 2 × 10¹⁶ cm^-2, and an ionising dose of ≈ 5 MGy after an integrated luminosity of 3000 fb^-1. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200 µm thick p-bulk pad diodes and strip sensors irradiated up to fluences of Φ_e_q= 1.3 × 10¹⁶ cm^-2 are shown.

Original language	English
Article number	567
Journal	The European Physical Journal C: Particles and Fields
Volume	77
Issue number	8
DOIs	https://doi.org/10.1140/epjc/s10052-017-5115-z
Publication status	Published - 1 Aug 2017
MoE publication type	A1 Journal article-refereed

Funding

The research leading to these results has received funding from the European Commission under the FP7 Research Infrastructures project AIDA, Grant agreement no. 262025 and the PIER Ideenfonds PIF-2013-23.

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title = "Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade",

abstract = "The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment{\textquoteright}s silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Φeq= 2 × 1016 cm-2, and an ionising dose of ≈ 5 MGy after an integrated luminosity of 3000 fb-1. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200 µm thick p-bulk pad diodes and strip sensors irradiated up to fluences of Φeq= 1.3 × 1016 cm-2 are shown.",

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AU - Vignali, Matteo Centis

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AU - Tuovinen, Esa

AU - Tracker Group of the CMS Collaboration

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Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

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