Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications

Subash Khanal, Tero Kiuru, Matthias Hoefle, Javier Montero, Oleg Cojocari, Juha Mallat, Petri Piironen, Antti V. Raisanen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

8 Citations (Scopus)

Abstract

This paper presents the characterization measurements and simulations performed with ACST InGaAs low-barrier Schottky diodes for millimeter wave mixing applications. While these low-barrier Schottky diodes have been successfully used for millimeter wave detector design, their performance when acting as mixers has not been tested yet. This paper shows the performance for this type of diodes in a fundamental mixing configuration with evaluation of conversion loss and noise temperature. A fundamental mixer test-jig is used as the measurement platform with low-loss E-H impedance tuners for RF and LO signal matching. In addition to the measurements, 3D HFSS and ADS circuit simulations are also performed and results are presented. Conversion loss of less than 5 dB is obtained for 0.1 mW LO power in mixer operation at 181-183 GHz.

Original languageEnglish
Title of host publication2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
PublisherInstitute of Electrical and Electronic Engineers IEEE
ISBN (Electronic)978-1-5090-1348-7
DOIs
Publication statusPublished - 27 Jun 2016
MoE publication typeA4 Article in a conference publication
Event2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland
Duration: 6 Jun 20168 Jun 2016

Conference

Conference2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
Abbreviated titleGSMM 2016
CountryFinland
CityEspoo
Period6/06/168/06/16
OtherThe main theme of the joint conference is MILLIMETER-WAVE AND TERAHERTZ SENSING AND COMMUNICATIONS. It covers millimeterwave and THz antennas, circuits, devices, systems and applications.

Fingerprint

Schottky barrier diodes
Schottky diodes
Millimeter waves
millimeter waves
tuners
Tuners
jigs
Jigs
noise temperature
Circuit simulation
Diodes
platforms
simulation
diodes
impedance
Detectors
evaluation
detectors
configurations
Temperature

Keywords

  • conversion loss
  • Low-barrier Schottky diodes
  • mixer measurement
  • noise temperature

Cite this

Khanal, S., Kiuru, T., Hoefle, M., Montero, J., Cojocari, O., Mallat, J., ... Raisanen, A. V. (2016). Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications. In 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications [7500308] Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/GSMM.2016.7500308
Khanal, Subash ; Kiuru, Tero ; Hoefle, Matthias ; Montero, Javier ; Cojocari, Oleg ; Mallat, Juha ; Piironen, Petri ; Raisanen, Antti V. / Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications. 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications. Institute of Electrical and Electronic Engineers IEEE, 2016.
@inproceedings{f1440e5f53df48e0b84a8e3708c43943,
title = "Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications",
abstract = "This paper presents the characterization measurements and simulations performed with ACST InGaAs low-barrier Schottky diodes for millimeter wave mixing applications. While these low-barrier Schottky diodes have been successfully used for millimeter wave detector design, their performance when acting as mixers has not been tested yet. This paper shows the performance for this type of diodes in a fundamental mixing configuration with evaluation of conversion loss and noise temperature. A fundamental mixer test-jig is used as the measurement platform with low-loss E-H impedance tuners for RF and LO signal matching. In addition to the measurements, 3D HFSS and ADS circuit simulations are also performed and results are presented. Conversion loss of less than 5 dB is obtained for 0.1 mW LO power in mixer operation at 181-183 GHz.",
keywords = "conversion loss, Low-barrier Schottky diodes, mixer measurement, noise temperature",
author = "Subash Khanal and Tero Kiuru and Matthias Hoefle and Javier Montero and Oleg Cojocari and Juha Mallat and Petri Piironen and Raisanen, {Antti V.}",
year = "2016",
month = "6",
day = "27",
doi = "10.1109/GSMM.2016.7500308",
language = "English",
booktitle = "2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Khanal, S, Kiuru, T, Hoefle, M, Montero, J, Cojocari, O, Mallat, J, Piironen, P & Raisanen, AV 2016, Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications. in 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications., 7500308, Institute of Electrical and Electronic Engineers IEEE, 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, Finland, 6/06/16. https://doi.org/10.1109/GSMM.2016.7500308

Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications. / Khanal, Subash; Kiuru, Tero; Hoefle, Matthias; Montero, Javier; Cojocari, Oleg; Mallat, Juha; Piironen, Petri; Raisanen, Antti V.

2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications. Institute of Electrical and Electronic Engineers IEEE, 2016. 7500308.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications

AU - Khanal, Subash

AU - Kiuru, Tero

AU - Hoefle, Matthias

AU - Montero, Javier

AU - Cojocari, Oleg

AU - Mallat, Juha

AU - Piironen, Petri

AU - Raisanen, Antti V.

PY - 2016/6/27

Y1 - 2016/6/27

N2 - This paper presents the characterization measurements and simulations performed with ACST InGaAs low-barrier Schottky diodes for millimeter wave mixing applications. While these low-barrier Schottky diodes have been successfully used for millimeter wave detector design, their performance when acting as mixers has not been tested yet. This paper shows the performance for this type of diodes in a fundamental mixing configuration with evaluation of conversion loss and noise temperature. A fundamental mixer test-jig is used as the measurement platform with low-loss E-H impedance tuners for RF and LO signal matching. In addition to the measurements, 3D HFSS and ADS circuit simulations are also performed and results are presented. Conversion loss of less than 5 dB is obtained for 0.1 mW LO power in mixer operation at 181-183 GHz.

AB - This paper presents the characterization measurements and simulations performed with ACST InGaAs low-barrier Schottky diodes for millimeter wave mixing applications. While these low-barrier Schottky diodes have been successfully used for millimeter wave detector design, their performance when acting as mixers has not been tested yet. This paper shows the performance for this type of diodes in a fundamental mixing configuration with evaluation of conversion loss and noise temperature. A fundamental mixer test-jig is used as the measurement platform with low-loss E-H impedance tuners for RF and LO signal matching. In addition to the measurements, 3D HFSS and ADS circuit simulations are also performed and results are presented. Conversion loss of less than 5 dB is obtained for 0.1 mW LO power in mixer operation at 181-183 GHz.

KW - conversion loss

KW - Low-barrier Schottky diodes

KW - mixer measurement

KW - noise temperature

UR - http://www.scopus.com/inward/record.url?scp=84979632778&partnerID=8YFLogxK

U2 - 10.1109/GSMM.2016.7500308

DO - 10.1109/GSMM.2016.7500308

M3 - Conference article in proceedings

BT - 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Khanal S, Kiuru T, Hoefle M, Montero J, Cojocari O, Mallat J et al. Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications. In 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications. Institute of Electrical and Electronic Engineers IEEE. 2016. 7500308 https://doi.org/10.1109/GSMM.2016.7500308