Abstract
This paper presents the characterization measurements and simulations performed with ACST InGaAs low-barrier Schottky diodes for millimeter wave mixing applications. While these low-barrier Schottky diodes have been successfully used for millimeter wave detector design, their performance when acting as mixers has not been tested yet. This paper shows the performance for this type of diodes in a fundamental mixing configuration with evaluation of conversion loss and noise temperature. A fundamental mixer test-jig is used as the measurement platform with low-loss E-H impedance tuners for RF and LO signal matching. In addition to the measurements, 3D HFSS and ADS circuit simulations are also performed and results are presented. Conversion loss of less than 5 dB is obtained for 0.1 mW LO power in mixer operation at 181-183 GHz.
Original language | English |
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Title of host publication | 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
ISBN (Electronic) | 978-1-5090-1348-7 |
DOIs | |
Publication status | Published - 27 Jun 2016 |
MoE publication type | A4 Article in a conference publication |
Event | 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland Duration: 6 Jun 2016 → 8 Jun 2016 |
Conference
Conference | 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications |
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Abbreviated title | GSMM 2016 |
Country/Territory | Finland |
City | Espoo |
Period | 6/06/16 → 8/06/16 |
Other | The main theme of the joint conference is MILLIMETER-WAVE AND TERAHERTZ SENSING AND COMMUNICATIONS. It covers millimeterwave and THz antennas, circuits, devices, systems and applications. |
Keywords
- conversion loss
- Low-barrier Schottky diodes
- mixer measurement
- noise temperature