Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications

Subash Khanal; Tero Kiuru; Matthias Hoefle; Javier Montero; Oleg Cojocari; Juha Mallat; Petri Piironen; Antti V. Raisanen

doi:10.1109/GSMM.2016.7500308

Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications

Subash Khanal, Tero Kiuru, Matthias Hoefle, Javier Montero, Oleg Cojocari, Juha Mallat, Petri Piironen, Antti V. Raisanen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

9 Citations (Scopus)

Abstract

This paper presents the characterization measurements and simulations performed with ACST InGaAs low-barrier Schottky diodes for millimeter wave mixing applications. While these low-barrier Schottky diodes have been successfully used for millimeter wave detector design, their performance when acting as mixers has not been tested yet. This paper shows the performance for this type of diodes in a fundamental mixing configuration with evaluation of conversion loss and noise temperature. A fundamental mixer test-jig is used as the measurement platform with low-loss E-H impedance tuners for RF and LO signal matching. In addition to the measurements, 3D HFSS and ADS circuit simulations are also performed and results are presented. Conversion loss of less than 5 dB is obtained for 0.1 mW LO power in mixer operation at 181-183 GHz.

Original language	English
Title of host publication	2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
Publisher	IEEE Institute of Electrical and Electronic Engineers
ISBN (Electronic)	978-1-5090-1348-7
DOIs	https://doi.org/10.1109/GSMM.2016.7500308
Publication status	Published - 27 Jun 2016
MoE publication type	A4 Article in a conference publication
Event	2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland Duration: 6 Jun 2016 → 8 Jun 2016

Conference

Conference	2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
Abbreviated title	GSMM 2016
Country/Territory	Finland
City	Espoo
Period	6/06/16 → 8/06/16
Other	The main theme of the joint conference is MILLIMETER-WAVE AND TERAHERTZ SENSING AND COMMUNICATIONS. It covers millimeterwave and THz antennas, circuits, devices, systems and applications.

Keywords

conversion loss
Low-barrier Schottky diodes
mixer measurement
noise temperature

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10.1109/GSMM.2016.7500308

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Khanal, S., Kiuru, T., Hoefle, M., Montero, J., Cojocari, O., Mallat, J., Piironen, P., & Raisanen, A. V. (2016). Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications. In 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications Article 7500308 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/GSMM.2016.7500308

@inproceedings{f1440e5f53df48e0b84a8e3708c43943,

title = "Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications",

abstract = "This paper presents the characterization measurements and simulations performed with ACST InGaAs low-barrier Schottky diodes for millimeter wave mixing applications. While these low-barrier Schottky diodes have been successfully used for millimeter wave detector design, their performance when acting as mixers has not been tested yet. This paper shows the performance for this type of diodes in a fundamental mixing configuration with evaluation of conversion loss and noise temperature. A fundamental mixer test-jig is used as the measurement platform with low-loss E-H impedance tuners for RF and LO signal matching. In addition to the measurements, 3D HFSS and ADS circuit simulations are also performed and results are presented. Conversion loss of less than 5 dB is obtained for 0.1 mW LO power in mixer operation at 181-183 GHz.",

keywords = "conversion loss, Low-barrier Schottky diodes, mixer measurement, noise temperature",

author = "Subash Khanal and Tero Kiuru and Matthias Hoefle and Javier Montero and Oleg Cojocari and Juha Mallat and Petri Piironen and Raisanen, {Antti V.}",

year = "2016",

month = jun,

day = "27",

doi = "10.1109/GSMM.2016.7500308",

language = "English",

booktitle = "2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications, GSMM 2016 ; Conference date: 06-06-2016 Through 08-06-2016",

}

Khanal, S, Kiuru, T, Hoefle, M, Montero, J, Cojocari, O, Mallat, J, Piironen, P & Raisanen, AV 2016, Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications. in 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications., 7500308, IEEE Institute of Electrical and Electronic Engineers, 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, Finland, 6/06/16. https://doi.org/10.1109/GSMM.2016.7500308

Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications. / Khanal, Subash; Kiuru, Tero; Hoefle, Matthias et al.
2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications. IEEE Institute of Electrical and Electronic Engineers, 2016. 7500308.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications

AU - Khanal, Subash

AU - Kiuru, Tero

AU - Hoefle, Matthias

AU - Montero, Javier

AU - Cojocari, Oleg

AU - Mallat, Juha

AU - Piironen, Petri

AU - Raisanen, Antti V.

PY - 2016/6/27

Y1 - 2016/6/27

N2 - This paper presents the characterization measurements and simulations performed with ACST InGaAs low-barrier Schottky diodes for millimeter wave mixing applications. While these low-barrier Schottky diodes have been successfully used for millimeter wave detector design, their performance when acting as mixers has not been tested yet. This paper shows the performance for this type of diodes in a fundamental mixing configuration with evaluation of conversion loss and noise temperature. A fundamental mixer test-jig is used as the measurement platform with low-loss E-H impedance tuners for RF and LO signal matching. In addition to the measurements, 3D HFSS and ADS circuit simulations are also performed and results are presented. Conversion loss of less than 5 dB is obtained for 0.1 mW LO power in mixer operation at 181-183 GHz.

AB - This paper presents the characterization measurements and simulations performed with ACST InGaAs low-barrier Schottky diodes for millimeter wave mixing applications. While these low-barrier Schottky diodes have been successfully used for millimeter wave detector design, their performance when acting as mixers has not been tested yet. This paper shows the performance for this type of diodes in a fundamental mixing configuration with evaluation of conversion loss and noise temperature. A fundamental mixer test-jig is used as the measurement platform with low-loss E-H impedance tuners for RF and LO signal matching. In addition to the measurements, 3D HFSS and ADS circuit simulations are also performed and results are presented. Conversion loss of less than 5 dB is obtained for 0.1 mW LO power in mixer operation at 181-183 GHz.

KW - conversion loss

KW - Low-barrier Schottky diodes

KW - mixer measurement

KW - noise temperature

UR - http://www.scopus.com/inward/record.url?scp=84979632778&partnerID=8YFLogxK

U2 - 10.1109/GSMM.2016.7500308

DO - 10.1109/GSMM.2016.7500308

M3 - Conference article in proceedings

AN - SCOPUS:84979632778

BT - 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications

Y2 - 6 June 2016 through 8 June 2016

ER -

Khanal S, Kiuru T, Hoefle M, Montero J, Cojocari O, Mallat J et al. Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications. In 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications. IEEE Institute of Electrical and Electronic Engineers. 2016. 7500308 doi: 10.1109/GSMM.2016.7500308

Characterisation of low-barrier Schottky diodes for millimeter wave mixer applications

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