Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Xuejie Shi; Kimmo Henttinen; Tommi Suni; Ilkka Suni; Man Wong

doi:10.1109/LED.2005.853649

Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Xuejie Shi, Kimmo Henttinen, Tommi Suni, Ilkka Suni, Man Wong (Corresponding Author)

VTT Technical Research Centre of Finland

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.

Original language	English
Pages (from-to)	607-609
Journal	IEEE Electron Device Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1109/LED.2005.853649
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

Keywords

ion-cutting
mobility enhancement
MOSFETs
silicon-on-quartz (SOQ)
strained-silicon

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title = "Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique",

abstract = "Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported {"}universal curve{"} for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.",

keywords = "ion-cutting, mobility enhancement, MOSFETs, silicon-on-quartz (SOQ), strained-silicon",

author = "Xuejie Shi and Kimmo Henttinen and Tommi Suni and Ilkka Suni and Man Wong",

note = "Project code: T5SU00302",

year = "2005",

doi = "10.1109/LED.2005.853649",

language = "English",

volume = "26",

pages = "607--609",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "9",

}

TY - JOUR

T1 - Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

AU - Shi, Xuejie

AU - Henttinen, Kimmo

AU - Suni, Tommi

AU - Suni, Ilkka

AU - Wong, Man

N1 - Project code: T5SU00302

PY - 2005

Y1 - 2005

N2 - Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.

AB - Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.

KW - ion-cutting

KW - mobility enhancement

KW - MOSFETs

KW - silicon-on-quartz (SOQ)

KW - strained-silicon

U2 - 10.1109/LED.2005.853649

DO - 10.1109/LED.2005.853649

M3 - Article

SN - 0741-3106

VL - 26

SP - 607

EP - 609

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Abstract

Keywords

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