Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Xuejie Shi; Kimmo Henttinen; Tommi Suni; Ilkka Suni; Man Wong

doi:10.1109/LED.2005.853649

Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Xuejie Shi, Kimmo Henttinen, Tommi Suni, Ilkka Suni, Man Wong (Corresponding Author)

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.

Original language	English
Pages (from-to)	607-609
Journal	IEEE Electron Device Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1109/LED.2005.853649
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

Keywords

ion-cutting
mobility enhancement
MOSFETs
silicon-on-quartz (SOQ)
strained-silicon

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@article{36661e9d30344db08d1c4077e079e156,

title = "Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique",

abstract = "Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported {"}universal curve{"} for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.",

keywords = "ion-cutting, mobility enhancement, MOSFETs, silicon-on-quartz (SOQ), strained-silicon",

author = "Xuejie Shi and Kimmo Henttinen and Tommi Suni and Ilkka Suni and Man Wong",

note = "Project code: T5SU00302",

year = "2005",

doi = "10.1109/LED.2005.853649",

language = "English",

volume = "26",

pages = "607--609",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "9",

}

TY - JOUR

T1 - Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

AU - Shi, Xuejie

AU - Henttinen, Kimmo

AU - Suni, Tommi

AU - Suni, Ilkka

AU - Wong, Man

N1 - Project code: T5SU00302

PY - 2005

Y1 - 2005

N2 - Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.

AB - Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.

KW - ion-cutting

KW - mobility enhancement

KW - MOSFETs

KW - silicon-on-quartz (SOQ)

KW - strained-silicon

U2 - 10.1109/LED.2005.853649

DO - 10.1109/LED.2005.853649

M3 - Article

VL - 26

SP - 607

EP - 609

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

ER -