Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Xuejie Shi, Kimmo Henttinen, Tommi Suni, Ilkka Suni, Man Wong (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.
Original languageEnglish
Pages (from-to)607 - 609
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number9
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

Quartz
Electron mobility
Silicon
Transistors
Wafer bonding
Hole mobility
Tensile strain
Raman spectroscopy
Crystalline materials
Thin films

Keywords

  • ion-cutting
  • mobility enhancement
  • MOSFETs
  • silicon-on-quartz (SOQ)
  • strained-silicon

Cite this

Shi, Xuejie ; Henttinen, Kimmo ; Suni, Tommi ; Suni, Ilkka ; Wong, Man. / Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique. In: IEEE Electron Device Letters. 2005 ; Vol. 26, No. 9. pp. 607 - 609.
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title = "Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique",
abstract = "Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35{\%} higher than that extracted from reported {"}universal curve{"} for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25{\%} in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.",
keywords = "ion-cutting, mobility enhancement, MOSFETs, silicon-on-quartz (SOQ), strained-silicon",
author = "Xuejie Shi and Kimmo Henttinen and Tommi Suni and Ilkka Suni and Man Wong",
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Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique. / Shi, Xuejie; Henttinen, Kimmo; Suni, Tommi; Suni, Ilkka; Wong, Man (Corresponding Author).

In: IEEE Electron Device Letters, Vol. 26, No. 9, 2005, p. 607 - 609.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

AU - Shi, Xuejie

AU - Henttinen, Kimmo

AU - Suni, Tommi

AU - Suni, Ilkka

AU - Wong, Man

N1 - Project code: T5SU00302

PY - 2005

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N2 - Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.

AB - Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.

KW - ion-cutting

KW - mobility enhancement

KW - MOSFETs

KW - silicon-on-quartz (SOQ)

KW - strained-silicon

U2 - 10.1109/LED.2005.853649

DO - 10.1109/LED.2005.853649

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JO - IEEE Electron Device Letters

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