Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Xuejie Shi, Kimmo Henttinen, Tommi Suni, Ilkka Suni, Man Wong (Corresponding Author)

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Abstract

Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.
Original languageEnglish
Pages (from-to)607-609
JournalIEEE Electron Device Letters
Volume26
Issue number9
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

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Keywords

  • ion-cutting
  • mobility enhancement
  • MOSFETs
  • silicon-on-quartz (SOQ)
  • strained-silicon

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