Abstract
Single-crystalline silicon thin film on fused quartz (SOQ) was prepared
using a technique based on wafer bonding and mechanically initiated
exfoliation. MOSFETs fabricated on the resulting SOQ were characterized.
The measured low-field electron effective mobility was /spl sim/1072
cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that
extracted from reported "universal curve" for electron effective
mobility. Consistent with the mobility enhancement, a tensile strain of
0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243
cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was
observed.
Original language | English |
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Pages (from-to) | 607-609 |
Journal | IEEE Electron Device Letters |
Volume | 26 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2005 |
MoE publication type | A1 Journal article-refereed |
Keywords
- ion-cutting
- mobility enhancement
- MOSFETs
- silicon-on-quartz (SOQ)
- strained-silicon